|
|
HFA16PB120 |
Vishay General Semiconductor - Diodes Division |
DIODE GP 1.2KV 16A TO247AC |
유품4680 pcs |
|
|
3 V @ 16 A |
20 µA @ 1200 V |
1200 V |
Fast Recovery =< 500ns, > 200mA (Io) |
135 ns |
-55°C ~ 150°C |
- |
16A |
HFA16 |
Tube |
HEXFRED® |
Standard |
Through Hole |
TO-247-2 |
TO-247AC Modified |
|
|
|
HFA25TB60 |
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 25A TO220AC |
유품5220 pcs |
|
|
1.7 V @ 25 A |
20 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
75 ns |
-55°C ~ 150°C |
- |
25A |
HFA25 |
Tube |
HEXFRED® |
Standard |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
JANTX1N3891 |
Microchip Technology |
DIODE GEN PURP 200V 12A DO203AA |
유품98 pcs |
|
|
1.5 V @ 38 A |
10 µA @ 200 V |
200 V |
Fast Recovery =< 500ns, > 200mA (Io) |
200 ns |
-65°C ~ 175°C |
- |
12A |
1N3891 |
Bulk |
Military, MIL-PRF-19500/304 |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-203AA |
|
|
|
MMBD6050 |
Fairchild Semiconductor |
DIODE GEN PURP 70V 200MA SOT23-3 |
유품1426800 pcs |
|
|
1.1 V @ 100 mA |
100 nA @ 50 V |
70 V |
Small Signal =< 200mA (Io), Any Speed |
4 ns |
-55°C ~ 150°C |
2.5pF @ 0V, 1MHz |
200mA |
- |
Bulk |
- |
Standard |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23-3 |
|
|
|
R20480 |
Microchip Technology |
DIODE GEN PURP 800V 12A DO203AA |
유품1071 pcs |
|
|
1.2 V @ 30 A |
10 µA @ 800 V |
800 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
12A |
R20480 |
Bulk |
- |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-203AA (DO-4) |
|
|
|
UF5407 |
NTE Electronics, Inc |
DIODE GEN PURP 800V 3A DO201AD |
유품54240 pcs |
|
|
1.7 V @ 3 A |
10 µA @ 800 V |
800 V |
Fast Recovery =< 500ns, > 200mA (Io) |
75 ns |
- |
36pF @ 4V, 1MHz |
3A |
- |
Bag |
- |
Standard |
Through Hole |
DO-201AD, Axial |
DO-201AD |
|
|
|
1N3289 |
Microchip Technology |
STANDARD RECTIFIER |
유품410 pcs |
|
|
1.55 V @ 310 A |
10 mA @ 200 V |
200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
100A |
1N3289 |
Bulk |
- |
Standard |
Stud Mount |
DO-205AA, DO-8, Stud |
DO-205AA (DO-8) |
|
|
|
VS-90EPS12L-M3 |
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 90A TO247AD |
유품16602 pcs |
|
|
1.2 V @ 90 A |
100 µA @ 1200 V |
1200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-40°C ~ 150°C |
- |
90A |
90EPS12 |
Tube |
- |
Standard |
Through Hole |
TO-247-2 |
TO-247AD |
|
|
|
SCS210AGHRC |
Rohm Semiconductor |
DIODE SIL CARB 650V 10A TO220AC |
유품8162 pcs |
|
|
1.55 V @ 10 A |
200 µA @ 600 V |
650 V |
No Recovery Time > 500mA (Io) |
0 ns |
175°C (Max) |
365pF @ 1V, 1MHz |
10A |
SCS210 |
Tube |
Automotive, AEC-Q101 |
SiC (Silicon Carbide) Schottky |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
S20120 |
Microchip Technology |
DIODE GEN PURP 1.2KV 16A DO203AA |
유품1357 pcs |
|
|
1.3 V @ 30 A |
10 µA @ 1200 V |
1200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
16A |
S20120 |
Bulk |
- |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-203AA (DO-4) |
|
|
|
SCS308AHGC9 |
Rohm Semiconductor |
DIODE SIL CARB 650V 8A TO220ACP |
유품19435 pcs |
|
|
1.5 V @ 8 A |
40 µA @ 650 V |
650 V |
No Recovery Time > 500mA (Io) |
0 ns |
175°C (Max) |
400pF @ 1V, 1MHz |
8A |
SCS308 |
Tube |
- |
SiC (Silicon Carbide) Schottky |
Through Hole |
TO-220-2 |
TO-220ACP |
|
|
|
UG8JHC0G |
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
유품5220 pcs |
|
|
2.9 V @ 8 A |
30 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
25 ns |
-55°C ~ 150°C |
- |
8A |
UG8J |
Tube |
Automotive, AEC-Q101 |
Standard |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
RURP860 |
Fairchild Semiconductor |
DIODE GEN PURP 600V 8A TO220-2 |
유품5300 pcs |
|
|
1.5 V @ 8 A |
100 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
70 ns |
-65°C ~ 175°C |
- |
8A |
- |
Bulk |
- |
Standard |
Through Hole |
TO-220-2 |
TO-220-2 |
|
|
|
JAN1N5816 |
Microchip Technology |
DIODE GEN PURP 150V 20A DO203AA |
유품5310 pcs |
|
|
950 mV @ 20 A |
10 µA @ 150 V |
150 V |
Fast Recovery =< 500ns, > 200mA (Io) |
35 ns |
-65°C ~ 175°C |
300pF @ 10V, 1MHz |
20A |
- |
Bulk |
MILITARY, MIL-PRF-19500/478 |
Standard |
Chassis, Stud Mount |
DO-203AA, DO-4, Stud |
DO-203AA (DO-4) |
|
|
|
183NQ100 |
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 180A D-67 |
유품3970 pcs |
|
|
950 mV @ 180 A |
4.5 mA @ 100 V |
100 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
- |
4150pF @ 5V, 1MHz |
180A |
183NQ100 |
Bulk |
- |
Schottky |
Chassis Mount |
D-67 HALF-PAK |
D-67 HALF-PAK |
|
|
|
STPS8H100D |
STMicroelectronics |
DIODE SCHOTTKY 100V 8A TO220AC |
유품63200 pcs |
|
|
710 mV @ 8 A |
4.5 µA @ 100 V |
100 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
175°C (Max) |
- |
8A |
STPS8 |
Tube |
- |
Schottky |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
HSC119JTRF-E |
Renesas |
HSC119 - RECTIFIER DIODE, 1 ELEM |
유품416010 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
|
|
|
RB051LA-40TR |
Rohm Semiconductor |
DIODE SCHOTTKY 20V 3A PMDT |
유품4350 pcs |
|
|
450 mV @ 3 A |
1 mA @ 20 V |
20 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
125°C (Max) |
- |
3A |
RB051 |
Tape & Reel (TR) |
- |
Schottky |
Surface Mount |
SOD-128 |
PMDT |
|
|
|
1N4719 |
Microchip Technology |
DIODE GEN PURP 50V 3A AXIAL |
유품932 pcs |
|
|
1 V @ 3 A |
25 µA @ 1000 V |
50 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
-65°C ~ 175°C |
- |
3A |
- |
Bulk |
- |
Standard |
Through Hole |
Axial |
Axial |
|
|
|
MUR460 |
onsemi |
DIODE GEN PURP 600V 4A AXIAL |
유품5430 pcs |
|
|
1.28 V @ 4 A |
10 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
75 ns |
-65°C ~ 175°C |
- |
4A |
MUR46 |
Bulk |
SWITCHMODE™ |
Standard |
Through Hole |
DO-201AA, DO-27, Axial |
Axial |
|
|
|
R7201406XXOO |
Powerex Inc. |
DIODE GP 1.4KV 600A DO200AB |
유품3960 pcs |
|
|
2.15 V @ 1500 A |
50 mA @ 1400 V |
1400 V |
Standard Recovery >500ns, > 200mA (Io) |
7 µs |
- |
- |
600A |
R7201406 |
Bulk |
- |
Standard |
Clamp On |
DO-200AB, B-PUK |
DO-200AB, B-PUK |
|
|
|
STPS8170DEE-TR |
STMicroelectronics |
DIODE SCHOTTKY 170V 8A POWERFLAT |
유품56800 pcs |
|
|
900 mV @ 8 A |
15 µA @ 170 V |
170 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
175°C (Max) |
- |
8A |
STPS8170 |
Tape & Reel (TR) |
- |
Schottky |
Surface Mount |
8-PowerTDFN |
PowerFlat™ (3.3x3.3) |
|
|
|
IDH06S60C |
Infineon Technologies |
DIODE SIL CARB 600V 6A TO220-2-2 |
유품4960 pcs |
|
|
1.7 V @ 6 A |
80 µA @ 600 V |
600 V |
No Recovery Time > 500mA (Io) |
0 ns |
-55°C ~ 175°C |
280pF @ 1V, 1MHz |
6A |
- |
Bulk |
CoolSiC™+ |
SiC (Silicon Carbide) Schottky |
Through Hole |
TO-220-2 |
PG-TO220-2-2 |
|
|
|
30HFU-100 |
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 100V 30A DO203AB |
유품4010 pcs |
|
|
1.45 V @ 30 A |
35 µA @ 100 V |
100 V |
Fast Recovery =< 500ns, > 200mA (Io) |
80 ns |
-40°C ~ 125°C |
- |
30A |
30HFU |
Bulk |
- |
Standard |
Chassis, Stud Mount |
DO-203AB, DO-5, Stud |
DO-203AB (DO-5) |
|
|
|
STPSC1206D |
STMicroelectronics |
DIODE SIL CARB 600V 12A TO220AC |
유품5160 pcs |
|
|
1.7 V @ 12 A |
150 µA @ 600 V |
600 V |
No Recovery Time > 500mA (Io) |
0 ns |
-40°C ~ 175°C |
750pF @ 0V, 1MHz |
12A |
STPSC1206 |
Tube |
- |
SiC (Silicon Carbide) Schottky |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
SS10200HE_R1_00001 |
Panjit International Inc. |
DIODE SCHOTTKY 200V 1A SOD123HE |
유품588250 pcs |
|
|
850 mV @ 1 A |
30 µA @ 200 V |
200 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
-55°C ~ 150°C |
85pF @ 0V, 1MHz |
1A |
SS10200 |
Tape & Reel (TR) |
- |
Schottky |
Surface Mount |
SOD-123H |
SOD-123HE |
|
|
|
1N5406G |
onsemi |
DIODE GEN PURP 600V 3A AXIAL |
유품337850 pcs |
|
|
1 V @ 3 A |
10 µA @ 600 V |
600 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 150°C |
- |
3A |
1N5406 |
Bulk |
- |
Standard |
Through Hole |
DO-201AA, DO-27, Axial |
Axial |
|
|
|
DL4001-13-F |
Diodes Incorporated |
DIODE GEN PURP 50V 1A MELF |
유품4780 pcs |
|
|
1.1 V @ 1 A |
5 µA @ 50 V |
50 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-55°C ~ 150°C |
15pF @ 4V, 1MHz |
1A |
DL4001 |
Tape & Reel (TR) |
- |
Standard |
Surface Mount |
DO-213AB, MELF (Glass) |
MELF |
|
|
|
SS16L RQG |
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A SUB SMA |
유품3610 pcs |
|
|
700 mV @ 1 A |
400 µA @ 60 V |
60 V |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
-55°C ~ 150°C |
- |
1A |
SS16 |
Tape & Reel (TR) |
- |
Schottky |
Surface Mount |
DO-219AB |
Sub SMA |
|
|
|
1N1198R |
Microchip Technology |
DIODE GEN PURP 600V 40A DO5 |
유품1070 pcs |
|
|
1.19 V @ 90 A |
10 µA @ 600 V |
600 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
40A |
- |
Bulk |
- |
Standard |
Stud Mount |
DO-203AB, DO-5, Stud |
DO-5 (DO-203AB) |
|
|
|
1N4053 |
Powerex Inc. |
DIODE GP 700V 275A DO205AB DO9 |
유품4980 pcs |
|
|
- |
12 mA @ 700 V |
700 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 190°C |
- |
275A |
1N4053 |
Bulk |
- |
Standard |
Chassis, Stud Mount |
DO-205AB, DO-9, Stud |
DO-205AB (DO-9) |
|
|
|
S2020 |
Microchip Technology |
DIODE GEN PURP 200V 16A DO203AA |
유품1485 pcs |
|
|
1.3 V @ 30 A |
10 µA @ 200 V |
200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
16A |
S2020 |
Bulk |
- |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-203AA (DO-4) |
|
|
|
1N3621 |
Microchip Technology |
DIODE GEN PURP 500V 16A DO4 |
유품772 pcs |
|
|
1 V @ 1 A |
10 µA @ 500 V |
500 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
16A |
- |
Bulk |
- |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-4 (DO-203AA) |
|
|
|
VS-ETX0806-M3 |
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
유품84100 pcs |
|
|
3.4 V @ 8 A |
30 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
17 ns |
-65°C ~ 175°C |
- |
8A |
ETX0806 |
Tube |
FRED Pt® |
Standard |
Through Hole |
TO-220-2 |
TO-220AC |
|
|
|
UF5406 |
Diotec Semiconductor |
DIODE UFR DO-201 600V 3A |
유품318580 pcs |
|
|
1.7 V @ 3 A |
5 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
75 ns |
-50°C ~ 175°C |
- |
3A |
- |
Tape & Reel (TR) |
- |
Standard |
Through Hole |
DO-201AA, DO-27, Axial |
DO-201 |
|
|
|
STTH1210DI |
STMicroelectronics |
DIODE GP 1KV 12A TO220AC INS |
유품17793 pcs |
|
|
2 V @ 12 A |
10 µA @ 1000 V |
1000 V |
Fast Recovery =< 500ns, > 200mA (Io) |
90 ns |
175°C (Max) |
- |
12A |
STTH1210 |
Tube |
- |
Standard |
Through Hole |
TO-220-2 Insulated, TO-220AC |
TO-220AC ins |
|
|
|
MURF1060 |
SMC Diode Solutions |
DIODE GEN PURP 600V 10A ITO220AC |
유품5290 pcs |
|
|
2.2 V @ 10 A |
5 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
50 ns |
-55°C ~ 150°C |
- |
10A |
- |
Tube |
- |
Standard |
Through Hole |
TO-220-2 Full Pack, Isolated Tab |
ITO-220AC |
|
|
|
1N1124 |
Microchip Technology |
STANDARD RECTIFIER |
유품976 pcs |
|
|
1.2 V @ 30 A |
10 µA @ 200 V |
200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 200°C |
- |
12A |
1N1124 |
Bulk |
- |
Standard |
Stud Mount |
DO-203AA, DO-4, Stud |
DO-4 (DO-203AA) |
|
|
|
DLA60I1200HA |
IXYS |
DIODE GEN PURP 1.2KV 60A TO247AD |
유품10754 pcs |
|
|
1.19 V @ 60 A |
30 µA @ 1200 V |
1200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-55°C ~ 175°C |
33pF @ 400V, 1MHz |
60A |
DLA60 |
Tube |
- |
Standard |
Through Hole |
TO-247-2 |
TO-247AD |
|
|
|
S310-G |
Fairchild Semiconductor |
RECTIFIER, SCHOTTKY, 3A, 100V, D |
유품202550 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
|
|
|
FFH30S60STU |
Fairchild Semiconductor |
RECTIFIER DIODE, 1 PHASE, 30A, 6 |
유품4160 pcs |
|
|
2.6 V @ 30 A |
100 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
40 ns |
-65°C ~ 150°C |
- |
30A |
- |
Bulk |
- |
Standard |
Through Hole |
TO-247-2 |
TO-247-2 |
|
|
|
JANTX1N4148-1 |
Microchip Technology |
DIODE GEN PURP 75V 200MA DO35 |
유품49410 pcs |
|
|
1.2 V @ 100 mA |
500 nA @ 75 V |
75 V |
Small Signal =< 200mA (Io), Any Speed |
20 ns |
-65°C ~ 175°C |
4pF @ 0V, 1MHz |
200mA |
1N4148 |
Bulk |
Military, MIL-PRF-19500/116 |
Standard |
Through Hole |
DO-204AH, DO-35, Axial |
DO-35 |
|
|
|
DPF120X200NA |
IXYS |
DIODE GEN PURP 200V 120A SOT227B |
유품4310 pcs |
|
|
- |
- |
200 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
- |
- |
120A |
DPF120 |
Tube |
- |
Standard |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
|
|
|
MUR460RLG |
onsemi |
DIODE GEN PURP 600V 4A AXIAL |
유품105310 pcs |
|
|
1.28 V @ 4 A |
10 µA @ 600 V |
600 V |
Fast Recovery =< 500ns, > 200mA (Io) |
75 ns |
-65°C ~ 175°C |
- |
4A |
MUR460 |
Tape & Reel (TR) |
SWITCHMODE™ |
Standard |
Through Hole |
DO-201AA, DO-27, Axial |
Axial |
|
|
|
MMBD4148 |
NTE Electronics, Inc |
DIODE GP 100V 200MA SOT23-3 |
유품839650 pcs |
|
|
1 V @ 10 mA |
5 µA @ 75 V |
100 V |
Small Signal =< 200mA (Io), Any Speed |
4 ns |
150°C (Max) |
4pF @ 0V, 1MHz |
200mA |
- |
Bag |
- |
Standard |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23-3 |
|
|
|
CDBQR0130L |
Comchip Technology |
DIODE SCHOTTKY 30V 100MA 0402 |
유품590500 pcs |
|
|
350 mV @ 10 mA |
10 µA @ 10 V |
30 V |
Small Signal =< 200mA (Io), Any Speed |
- |
125°C (Max) |
- |
100mA |
CDBQR0130 |
Tape & Reel (TR) |
- |
Schottky |
Surface Mount |
0402 (1006 Metric) |
0402C/SOD-923F |
|
|
|
BAS21-TP |
Micro Commercial Co |
DIODE GEN PURP 200V 200MA SOT23 |
유품1363200 pcs |
|
|
1.25 V @ 200 mA |
100 nA @ 200 V |
200 V |
Small Signal =< 200mA (Io), Any Speed |
50 ns |
-65°C ~ 150°C |
5pF @ 0V, 1MHz |
200mA |
BAS21 |
Tape & Reel (TR) |
- |
Standard |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23 |
|
|
|
1N3213R |
GeneSiC Semiconductor |
DIODE GEN PURP REV 500V 15A DO5 |
유품6635 pcs |
|
|
1.5 V @ 15 A |
10 µA @ 50 V |
500 V |
Standard Recovery >500ns, > 200mA (Io) |
- |
-65°C ~ 175°C |
- |
15A |
1N3213R |
Bulk |
- |
Standard, Reverse Polarity |
Chassis, Stud Mount |
DO-203AB, DO-5, Stud |
DO-5 |
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JANS1N5711UB |
Microchip Technology |
DIODE SCHOTTKY 50V UB |
유품159 pcs |
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1 V @ 15 mA |
200 nA @ 50 V |
50 V |
Small Signal =< 200mA (Io), Any Speed |
- |
-65°C ~ 150°C |
2pF @ 0V, 1MHz |
- |
- |
Bulk |
Military, MIL-PRF-19500/444 |
Schottky |
Surface Mount |
4-SMD, No Lead |
UB |
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RFU02VSM8STR |
Rohm Semiconductor |
DIODE GP 800V 200MA TUMD2SM |
유품315100 pcs |
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3 V @ 200 mA |
10 µA @ 800 V |
800 V |
Small Signal =< 200mA (Io), Any Speed |
25 ns |
150°C (Max) |
4pF @ 0V, 1MHz |
200mA |
RFU02 |
Tape & Reel (TR) |
- |
Standard |
Surface Mount |
2-SMD, Flat Lead |
TUMD2SM |
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