|
|
NVTFWS9D6P04M8LTAG |
onsemi |
MOSFET P-CH 40V 13A/64A 8WDFN |
유품51430 pcs |
|
|
- |
40 V |
13A (Ta), 64A (Tc) |
9.5mOhm @ 20A, 10V |
2.4V @ 580µA |
34.6 nC @ 10 V |
2312 pF @ 20 V |
4.5V, 10V |
±20V |
P-Channel |
NVTFWS9 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WDFN (3.3x3.3) |
3.2W (Ta), 75W (Tc) |
|
|
|
IRFH5010TR2PBF |
Infineon Technologies |
MOSFET N-CH 100V 13A 5X6 PQFN |
유품4440 pcs |
|
|
- |
100 V |
13A (Ta), 100A (Tc) |
9mOhm @ 50A, 10V |
4V @ 150µA |
98 nC @ 10 V |
4340 pF @ 25 V |
- |
- |
N-Channel |
- |
Cut Tape (CT) |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
8-PowerVDFN |
8-PQFN (5x6) |
- |
|
|
|
IRF9Z14 |
Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
유품4960 pcs |
|
|
- |
60 V |
6.7A (Tc) |
500mOhm @ 4A, 10V |
4V @ 250µA |
12 nC @ 10 V |
270 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
43W (Tc) |
|
|
|
TSM250N02CX |
Taiwan Semiconductor Corporation |
20V, 5.8A, SINGLE N-CHANNEL POWE |
유품136650 pcs |
|
|
- |
20 V |
5.8A (Tc) |
25mOhm @ 4A, 4.5V |
0.8V @ 250µA |
7.7 nC @ 4.5 V |
535 pF @ 10 V |
1.8V, 4.5V |
±10V |
N-Channel |
TSM250 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23 |
1.56W (Tc) |
|
|
|
NVMFS5C604NLT1G |
onsemi |
MOSFET N-CH 60V 40A/287A 5DFN |
유품3710 pcs |
|
|
- |
60 V |
40A (Ta), 287A (Tc) |
1.2mOhm @ 50A, 10V |
2V @ 250µA |
120 nC @ 10 V |
8900 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
NVMFS5 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.9W (Ta), 200W (Tc) |
|
|
|
FDU2572 |
onsemi |
MOSFET N-CH 150V 4A/29A IPAK |
유품5430 pcs |
|
|
- |
150 V |
4A (Ta), 29A (Tc) |
54mOhm @ 9A, 10V |
4V @ 250µA |
34 nC @ 10 V |
1770 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
FDU25 |
Tube |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
135W (Tc) |
|
|
|
SQJA68EP-T1_GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 14A PPAK SO-8L |
유품110630 pcs |
|
|
- |
100 V |
14A (Tc) |
92mOhm @ 4A, 10V |
2.5V @ 250µA |
8 nC @ 10 V |
280 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
SQJA68 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
PowerPAK® SO-8L |
PowerPAK® SO-8L |
45W (Tc) |
|
|
|
DMP2104LP-7 |
Diodes Incorporated |
MOSFET P-CH 20V 1.5A 3DFN1411 |
유품343090 pcs |
|
|
- |
20 V |
1.5A (Ta) |
150mOhm @ 950mA, 4.5V |
1V @ 250µA |
- |
320 pF @ 16 V |
1.8V, 4.5V |
±12V |
P-Channel |
DMP2104 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-UDFN |
DFN1411-3 |
500mW (Ta) |
|
|
|
AON7430 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13A/34A 8DFN |
유품269390 pcs |
|
|
- |
30 V |
13A (Ta), 34A (Tc) |
12mOhm @ 20A, 10V |
2.5V @ 250µA |
17 nC @ 10 V |
910 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
AON743 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-DFN-EP (3x3) |
3.1W (Ta), 23W (Tc) |
|
|
|
IPA60R280P7SXKSA1 |
Infineon Technologies |
MOSFET N-CH 600V 12A TO220 |
유품67480 pcs |
|
|
- |
600 V |
12A (Tc) |
280mOhm @ 3.8A, 10V |
4V @ 190µA |
18 nC @ 10 V |
761 pF @ 400 V |
10V |
±20V |
N-Channel |
IPA60R280 |
Tube |
CoolMOS™ P7 |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-FP |
24W (Tc) |
|
|
|
FCD3400N80Z |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, N |
유품4050 pcs |
|
|
- |
800 V |
2A (Tc) |
3.4Ohm @ 1A, 10V |
4.5V @ 200µA |
9.6 nC @ 10 V |
400 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
32W (Tc) |
|
|
|
FDPF12N35 |
Fairchild Semiconductor |
MOSFET N-CH 350V 12A TO220F |
유품51320 pcs |
|
|
- |
350 V |
12A (Tc) |
380mOhm @ 6A, 10V |
5V @ 250µA |
25 nC @ 10 V |
1110 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
31.3W (Tc) |
|
|
|
PJW5N10_R2_00001 |
Panjit International Inc. |
100V N-CHANNEL ENHANCEMENT MODE |
유품257190 pcs |
|
|
- |
100 V |
3.1A (Ta), 5A (Tc) |
130mOhm @ 2.5A, 10V |
3.5V @ 250µA |
12 nC @ 10 V |
707 pF @ 30 V |
6V, 10V |
±20V |
N-Channel |
PJW5N10 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223 |
3.1W (Ta) |
|
|
|
BSZ049N03LSCGATMA1 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품5100 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
CSD19536KTTT |
Texas Instruments |
MOSFET N-CH 100V 200A DDPAK |
유품5947 pcs |
|
|
- |
100 V |
200A (Ta) |
2.4mOhm @ 100A, 10V |
3.2V @ 250µA |
153 nC @ 10 V |
12000 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
CSD19536 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
DDPAK/TO-263-3 |
375W (Tc) |
|
|
|
SIR890DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
유품5050 pcs |
|
|
- |
20 V |
50A (Tc) |
2.9mOhm @ 10A, 10V |
2.6V @ 250µA |
60 nC @ 10 V |
2747 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
SIR890 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 50W (Tc) |
|
|
|
FQN1N60CTA |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품194470 pcs |
|
|
- |
600 V |
300mA (Tc) |
11.5Ohm @ 150mA, 10V |
4V @ 250µA |
6.2 nC @ 10 V |
170 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
TO-92-3 |
1W (Ta), 3W (Tc) |
|
|
|
UPA2708GR-E1-A |
Renesas Electronics America Inc |
N-CHANNEL POWER MOSFET |
유품39598 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FQAF19N60 |
Fairchild Semiconductor |
MOSFET N-CH 600V 11.2A TO3PF |
유품16762 pcs |
|
|
- |
600 V |
11.2A (Tc) |
380mOhm @ 5.6A, 10V |
5V @ 250µA |
90 nC @ 10 V |
3600 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3 Full Pack |
TO-3PF |
120W (Tc) |
|
|
|
BSC042NE7NS3G |
Infineon Technologies |
BSC042NE7 - 12V-300V N-CHANNEL P |
유품3820 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
|
|
|
FDMC8878 |
onsemi |
MOSFET N-CH 30V 9.6A/16.5A 8MLP |
유품82640 pcs |
|
|
- |
30 V |
9.6A (Ta), 16.5A (Tc) |
14mOhm @ 9.6A, 10V |
3V @ 250µA |
26 nC @ 10 V |
1230 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
FDMC88 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-MLP (3.3x3.3) |
2.1W (Ta), 31W (Tc) |
|
|
|
PMR670UPE,115 |
NXP USA Inc. |
MOSFET P-CH 20V 480MA SC75 |
유품4900 pcs |
|
|
- |
20 V |
480mA (Ta) |
850mOhm @ 400mA, 4.5V |
1.3V @ 250µA |
1.14 nC @ 4.5 V |
87 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
PMR6 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-75, SOT-416 |
SC-75 |
250mW (Ta), 770mW (Tc) |
|
|
|
AOWF8N50 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 8A TO262F |
유품61860 pcs |
|
|
- |
500 V |
8A (Tc) |
850mOhm @ 4A, 10V |
4.5V @ 250µA |
28 nC @ 10 V |
1042 pF @ 25 V |
10V |
±30V |
N-Channel |
AOWF8 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262F |
27.8W (Tc) |
|
|
|
HAT2165N-EL-E |
Renesas Electronics America Inc |
MOSFET N-CH 30V 55A 8LFPAK |
유품16823 pcs |
|
|
- |
30 V |
55A (Ta) |
3.6mOhm @ 27.5A, 10V |
- |
33 nC @ 4.5 V |
5180 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerSOIC (0.154", 3.90mm Width) |
8-LFPAK-iV |
30W (Tc) |
|
|
|
FDMS86102LZ |
onsemi |
MOSFET N-CH 100V 7A/22A 8PQFN |
유품39885 pcs |
|
|
- |
100 V |
7A (Ta), 22A (Tc) |
25mOhm @ 7A, 10V |
2.5V @ 250µA |
22 nC @ 10 V |
1305 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
FDMS86102 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
2.5W (Ta), 69W (Tc) |
|
|
|
IRF8736PBF |
International Rectifier |
HEXFET POWER MOSFET |
유품5430 pcs |
|
|
- |
30 V |
18A (Ta) |
4.8mOhm @ 18A, 10V |
2.35V @ 50µA |
26 nC @ 4.5 V |
2315 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
2.5W (Ta) |
|
|
|
IXFB170N30P |
IXYS |
MOSFET N-CH 300V 170A PLUS264 |
유품996 pcs |
|
|
- |
300 V |
170A (Tc) |
18mOhm @ 85A, 10V |
4.5V @ 1mA |
258 nC @ 10 V |
20000 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFB170 |
Tube |
HiPerFET™, Polar |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
PLUS264™ |
1250W (Tc) |
|
|
|
HUFA75307P3 |
Fairchild Semiconductor |
MOSFET N-CH 55V 15A TO220-3 |
유품134090 pcs |
|
|
- |
55 V |
15A (Tc) |
90mOhm @ 15A, 10V |
4V @ 250µA |
20 nC @ 20 V |
250 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
45W (Tc) |
|
|
|
IRF6613TR1 |
Infineon Technologies |
MOSFET N-CH 40V 23A DIRECTFET |
유품4450 pcs |
|
|
- |
40 V |
23A (Ta), 150A (Tc) |
3.4mOhm @ 23A, 10V |
2.25V @ 250µA |
63 nC @ 4.5 V |
5950 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MT |
DIRECTFET™ MT |
2.8W (Ta), 89W (Tc) |
|
|
|
2SJ451ZK-TL-E |
Renesas Electronics America Inc |
P-CHANNEL SMALL SIGNAL MOSFET |
유품155970 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FDWS9510L-F085 |
onsemi |
MOSFET P-CH 40V 50A 8DFN |
유품3970 pcs |
|
|
- |
40 V |
50A (Tc) |
13.5mOhm @ 50A, 10V |
3V @ 250µA |
37 nC @ 10 V |
2320 pF @ 20 V |
4.5V, 10V |
±16V |
P-Channel |
FDWS9510 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-DFN (5.1x6.3) |
75W (Tj) |
|
|
|
NTLJS5D0N03CTAG |
onsemi |
MOSFET N-CH 30V 11.2A 6PQFN |
유품45770 pcs |
|
|
- |
30 V |
11.2A (Ta) |
4.38mOhm @ 10A, 10V |
2.2V @ 250µA |
18 nC @ 10 V |
1255 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTLJS5 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-PowerWDFN |
6-PQFN (2x2) |
860mW (Ta) |
|
|
|
IRF9610PBF |
Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO220AB |
유품47600 pcs |
|
|
- |
200 V |
1.8A (Tc) |
3Ohm @ 900mA, 10V |
4V @ 250µA |
11 nC @ 10 V |
170 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9610 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
20W (Tc) |
|
|
|
IRFR320TRRPBF |
Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
유품56410 pcs |
|
|
- |
400 V |
3.1A (Tc) |
1.8Ohm @ 1.9A, 10V |
4V @ 250µA |
20 nC @ 10 V |
350 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR320 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
|
|
|
SPP15P10P H |
Infineon Technologies |
P-CHANNEL POWER MOSFET |
유품4020 pcs |
|
|
- |
100 V |
15A (Tc) |
240mOhm @ 10.6A, 10V |
2.1V @ 1.54mA |
48 nC @ 10 V |
1280 pF @ 25 V |
10V |
±20V |
P-Channel |
- |
Bulk |
Automotive, AEC-Q101, SIPMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
128W (Tc) |
|
|
|
FQD5N50CTM |
Fairchild Semiconductor |
MOSFET N-CH 500V 4A DPAK |
유품67710 pcs |
|
|
- |
500 V |
4A (Tc) |
1.4Ohm @ 2A, 10V |
4V @ 250µA |
24 nC @ 10 V |
625 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
2.5W (Ta), 48W (Tc) |
|
|
|
IRL630STRLPBF |
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
유품21209 pcs |
|
|
- |
200 V |
9A (Tc) |
400mOhm @ 5.4A, 5V |
2V @ 250µA |
40 nC @ 10 V |
1100 pF @ 25 V |
4V, 5V |
±10V |
N-Channel |
IRL630 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 74W (Tc) |
|
|
|
IRF530STRRPBF |
Vishay Siliconix |
MOSFET N-CH 100V 14A TO263 |
유품31841 pcs |
|
|
- |
100 V |
14A (Tc) |
160mOhm @ 8.4A, 10V |
4V @ 250µA |
26 nC @ 10 V |
670 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF530 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.7W (Ta), 88W (Tc) |
|
|
|
FDS6688S |
Fairchild Semiconductor |
MOSFET N-CH 30V 16A 8SOIC |
유품56470 pcs |
|
|
- |
30 V |
16A (Ta) |
6mOhm @ 16A, 10V |
3V @ 1mA |
78 nC @ 10 V |
3290 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
SIHF18N50D-E3 |
Vishay Siliconix |
MOSFET N-CH 500V 18A TO220 |
유품28523 pcs |
|
|
- |
500 V |
18A (Tc) |
280mOhm @ 9A, 10V |
5V @ 250µA |
76 nC @ 10 V |
1500 pF @ 100 V |
10V |
±30V |
N-Channel |
SIHF18 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220 Full Pack |
39W (Tc) |
|
|
|
SISS70DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 125V 8.5A/31A PPAK |
유품67440 pcs |
|
|
- |
125 V |
8.5A (Ta), 31A (Tc) |
29.8mOhm @ 8.5A, 10V |
4.5V @ 250µA |
15.3 nC @ 10 V |
535 pF @ 62.5 V |
10V |
±20V |
N-Channel |
SISS70 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8S |
PowerPAK® 1212-8S |
5.1W (Ta), 65.8W (Tc) |
|
|
|
FCP190N60E |
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE |
유품4460 pcs |
|
|
- |
600 V |
20.6A (Tc) |
190mOhm @ 10A, 10V |
3.5V @ 250µA |
82 nC @ 10 V |
3175 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
208W (Tc) |
|
|
|
UPA2700GR-E1-A |
Renesas Electronics America Inc |
N-CHANNEL POWER MOSFET |
유품12384 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
TSM2NB60CH |
Taiwan Semiconductor Corporation |
600V, 2A, SINGLE N-CHANNEL POWER |
유품51850 pcs |
|
|
- |
600 V |
2A (Tc) |
4.4Ohm @ 1A, 10V |
4.5V @ 250µA |
9.4 nC @ 10 V |
249 pF @ 25 V |
10V |
±30V |
N-Channel |
TSM2 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
TO-251 (IPAK) |
44W (Tc) |
|
|
|
IRFBC30ALPBF |
Vishay Siliconix |
MOSFET N-CH 600V 3.6A I2PAK |
유품43510 pcs |
|
|
- |
600 V |
3.6A (Tc) |
2.2Ohm @ 2.2A, 10V |
4.5V @ 250µA |
23 nC @ 10 V |
510 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFBC30 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK |
74W (Tc) |
|
|
|
IRFS31N20DTRLP |
International Rectifier |
HEXFET N-CHANNEL POWER MOSFET |
유품4340 pcs |
|
|
- |
200 V |
31A (Tc) |
82mOhm @ 18A, 10V |
5.5V @ 250µA |
107 nC @ 10 V |
2370 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.1W (Ta), 200W (Tc) |
|
|
|
AUIRFS4115 |
International Rectifier |
MOSFET N-CH 150V 99A D2PAK |
유품3740 pcs |
|
|
- |
150 V |
99A (Tc) |
12.1mOhm @ 62A, 10V |
5V @ 250µA |
120 nC @ 10 V |
5270 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
375W (Tc) |
|
|
|
IXTK62N25 |
IXYS |
MOSFET N-CH 250V 62A TO264 |
유품3780 pcs |
|
|
- |
250 V |
62A (Tc) |
35mOhm @ 31A, 10V |
4V @ 250µA |
240 nC @ 10 V |
5400 pF @ 25 V |
10V |
±20V |
N-Channel |
IXTK62 |
Tube |
MegaMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264 (IXTK) |
390W (Tc) |
|
|
|
DMS3014SFG-7 |
Diodes Incorporated |
MOSFET N-CH 30V 9.5A PWRDI3333-8 |
유품141930 pcs |
|
|
Schottky Diode (Body) |
30 V |
9.5A (Ta) |
13mOhm @ 10.4A, 10V |
2.2V @ 250µA |
45.7 nC @ 10 V |
4310 pF @ 15 V |
1.8V, 4.5V |
±12V |
N-Channel |
DMS3014 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerDI3333-8 |
1W (Ta) |
|
|
|
IRF3709PBF |
International Rectifier |
IRF3709 - 12V-300V N-CHANNEL POW |
유품51450 pcs |
|
|
- |
30 V |
90A (Tc) |
9mOhm @ 15A, 10V |
3V @ 250µA |
41 nC @ 5 V |
2672 pF @ 16 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
3.1W (Ta), 120W (Tc) |
|