|
|
NDP7061 |
Fairchild Semiconductor |
MOSFET N-CH 60V 64A TO220-3 |
유품14634 pcs |
|
|
- |
60 V |
64A (Tc) |
16mOhm @ 35A, 10V |
4V @ 250µA |
100 nC @ 10 V |
1930 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
- |
MOSFET (Metal Oxide) |
-65°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
130W (Tc) |
|
|
|
SI7888DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 30V 9.4A PPAK SO-8 |
유품5080 pcs |
|
|
- |
30 V |
9.4A (Ta) |
12mOhm @ 12.4A, 10V |
2V @ 250µA |
10.5 nC @ 5 V |
- |
4.5V, 10V |
±12V |
N-Channel |
SI7888 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
1.8W (Ta) |
|
|
|
IPL60R125C7AUMA1 |
Infineon Technologies |
MOSFET N-CH 600V 17A 4VSON |
유품10112 pcs |
|
|
- |
600 V |
17A (Tc) |
125mOhm @ 7.8A, 10V |
4V @ 390µA |
34 nC @ 10 V |
1500 pF @ 400 V |
10V |
±20V |
N-Channel |
IPL60R |
Tape & Reel (TR) |
CoolMOS™ C7 |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
4-PowerTSFN |
PG-VSON-4 |
103W (Tc) |
|
|
|
NTMFS4835NT1G |
onsemi |
MOSFET N-CH 30V 13A/130A 5DFN |
유품3790 pcs |
|
|
- |
30 V |
13A (Ta), 130A (Tc) |
3.5mOhm @ 30A, 10V |
2.5V @ 250µA |
52 nC @ 11.5 V |
3100 pF @ 12 V |
4.5V, 11.5V |
±20V |
N-Channel |
NTMFS4835 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
890mW (Ta), 62.5W (Tc) |
|
|
|
BSC098N10NS5ATMA1 |
Infineon Technologies |
MOSFET N-CH 100V 60A TDSON |
유품40600 pcs |
|
|
- |
100 V |
60A (Tc) |
9.8mOhm @ 30A, 10V |
3.8V @ 36µA |
28 nC @ 10 V |
2100 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
BSC098 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-7 |
2.5W (Ta), 69W (Tc) |
|
|
|
BTS244ZE3043 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품11188 pcs |
|
|
- |
55 V |
35A (Tc) |
13mOhm @ 19A, 10V |
2V @ 130µA |
130 nC @ 10 V |
2660 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
* |
MOSFET (Metal Oxide) |
-40°C ~ 175°C (TJ) |
Through Hole |
TO-220-5 |
TO-220-5 |
170W (Tc) |
|
|
|
IXFL38N100Q2 |
IXYS |
MOSFET N-CH 1000V 29A ISOPLUS264 |
유품727 pcs |
|
|
- |
1000 V |
29A (Tc) |
280mOhm @ 19A, 10V |
5.5V @ 8mA |
250 nC @ 10 V |
13500 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFL38 |
Tube |
HiPerFET™, Q2 Class |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
ISOPLUS264™ |
380W (Tc) |
|
|
|
FDD6030BL |
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET |
유품42864 pcs |
|
|
- |
30 V |
10A (Ta), 42A (Tc) |
16mOhm @ 10A, 10V |
3V @ 250µA |
31 nC @ 10 V |
1143 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
1.6W (Ta), 50W (Tc) |
|
|
|
DMN2450UFD-7 |
Diodes Incorporated |
MOSFET N-CH 20V 900MA 3DFN |
유품540550 pcs |
|
|
- |
20 V |
900mA (Ta) |
600mOhm @ 200mA, 4.5V |
1V @ 250µA |
0.7 nC @ 4.5 V |
52 pF @ 16 V |
1.5V, 4.5V |
±12V |
N-Channel |
DMN2450 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-UDFN |
X1-DFN1212-3 |
400mW (Ta) |
|
|
|
FDS6688 |
Fairchild Semiconductor |
MOSFET N-CH 30V 16A 8SOIC |
유품38285 pcs |
|
|
- |
30 V |
16A (Ta) |
6mOhm @ 16A, 10V |
3V @ 250µA |
56 nC @ 5 V |
3888 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
IRFR9310TR |
Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
유품5220 pcs |
|
|
- |
400 V |
1.8A (Tc) |
7Ohm @ 1.1A, 10V |
4V @ 250µA |
13 nC @ 10 V |
270 pF @ 25 V |
10V |
±20V |
P-Channel |
IRFR9310 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
50W (Tc) |
|
|
|
IRFR9210TRPBF |
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
유품53650 pcs |
|
|
- |
200 V |
1.9A (Tc) |
3Ohm @ 1.1A, 10V |
4V @ 250µA |
8.9 nC @ 10 V |
170 pF @ 25 V |
10V |
±20V |
P-Channel |
IRFR9210 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 25W (Tc) |
|
|
|
SI7802DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
유품4450 pcs |
|
|
- |
250 V |
1.24A (Ta) |
435mOhm @ 1.95A, 10V |
3.6V @ 250µA |
21 nC @ 10 V |
- |
6V, 10V |
±20V |
N-Channel |
SI7802 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
1.5W (Ta) |
|
|
|
SIHD3N50D-E3 |
Vishay Siliconix |
MOSFET N-CH 500V 3A DPAK |
유품115530 pcs |
|
|
- |
500 V |
3A (Tc) |
3.2Ohm @ 2.5A, 10V |
5V @ 250µA |
12 nC @ 10 V |
175 pF @ 100 V |
10V |
±30V |
N-Channel |
SIHD3 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252AA |
69W (Tc) |
|
|
|
FDU6N25 |
onsemi |
MOSFET N-CH 250V 4.4A IPAK |
유품191180 pcs |
|
|
- |
250 V |
4.4A (Tc) |
1.1Ohm @ 2.2A, 10V |
5V @ 250µA |
6 nC @ 10 V |
250 pF @ 25 V |
10V |
±30V |
N-Channel |
FDU6 |
Tube |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Stub Leads, IPak |
I-PAK |
50W (Tc) |
|
|
|
NDP7060 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 7 |
유품5170 pcs |
|
|
- |
60 V |
75A (Tc) |
13mOhm @ 40A, 10V |
4V @ 250µA |
115 nC @ 10 V |
3600 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-65°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
150W (Tc) |
|
|
|
IXFH24N50 |
IXYS |
MOSFET N-CH 500V 24A TO247AD |
유품5240 pcs |
|
|
- |
500 V |
24A (Tc) |
230mOhm @ 12A, 10V |
4V @ 4mA |
160 nC @ 10 V |
4200 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH24 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
300W (Tc) |
|
|
|
IRF740ASTRLPBF |
Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
유품13412 pcs |
|
|
- |
400 V |
10A (Tc) |
550mOhm @ 6A, 10V |
4V @ 250µA |
36 nC @ 10 V |
1030 pF @ 25 V |
10V |
±30V |
N-Channel |
IRF740 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
125W (Tc) |
|
|
|
IXFK44N60 |
IXYS |
MOSFET N-CH 600V 44A TO264AA |
유품3810 pcs |
|
|
- |
600 V |
44A (Tc) |
130mOhm @ 22A, 10V |
4.5V @ 8mA |
330 nC @ 10 V |
8900 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFK44 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264AA (IXFK) |
560W (Tc) |
|
|
|
STL60NH3LL |
STMicroelectronics |
MOSFET N-CH 30V 30A POWERFLAT |
유품4380 pcs |
|
|
- |
30 V |
30A (Tc) |
8.5mOhm @ 8A, 10V |
1V @ 250µA |
24 nC @ 4.5 V |
1810 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
STL60 |
Tape & Reel (TR) |
STripFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (5x6) |
60W (Tc) |
|
|
|
FDMC6679AZ |
onsemi |
MOSFET P-CH 30V 11.5A/20A 8MLP |
유품65510 pcs |
|
|
- |
30 V |
11.5A (Ta), 20A (Tc) |
10mOhm @ 11.5A, 10V |
3V @ 250µA |
91 nC @ 10 V |
3970 pF @ 15 V |
4.5V, 10V |
±25V |
P-Channel |
FDMC6679 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-MLP (3.3x3.3) |
2.3W (Ta), 41W (Tc) |
|
|
|
SIA477EDJ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |
유품201100 pcs |
|
|
- |
12 V |
12A (Tc) |
14mOhm @ 7A, 4.5V |
1V @ 250µA |
87 nC @ 8 V |
2970 pF @ 6 V |
- |
- |
P-Channel |
SIA477 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-70-6 |
PowerPAK® SC-70-6 |
- |
|
|
|
UPA2826T1S-E2-AT |
Renesas Electronics America Inc |
8P HWSON |
유품45640 pcs |
|
|
- |
20 V |
27A (Ta) |
4.3mOhm @ 13.5A, 8V |
1.5V @ 1mA |
37 nC @ 4 V |
3610 pF @ 10 V |
2.5V, 8V |
±12V |
N-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C |
Surface Mount |
8-PowerWDFN |
8-HWSON (3.3x3.3) |
20W (Ta) |
|
|
|
SIS412DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
유품152270 pcs |
|
|
- |
30 V |
12A (Tc) |
24mOhm @ 7.8A, 10V |
2.5V @ 250µA |
12 nC @ 10 V |
435 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SIS412 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
3.2W (Ta), 15.6W (Tc) |
|
|
|
RFD16N06LESM9A |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품3700 pcs |
|
|
- |
60 V |
16A (Tc) |
47mOhm @ 16A, 5V |
3V @ 250µA |
62 nC @ 10 V |
1350 pF @ 25 V |
5V |
+10V, -8V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
90W (Tc) |
|
|
|
IRFR210 |
Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
유품3840 pcs |
|
|
- |
200 V |
2.6A (Tc) |
1.5Ohm @ 1.6A, 10V |
4V @ 250µA |
8.2 nC @ 10 V |
140 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR210 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 25W (Tc) |
|
|
|
IRFZ14 |
Vishay Siliconix |
MOSFET N-CH 60V 10A TO220AB |
유품3610 pcs |
|
|
- |
60 V |
10A (Tc) |
200mOhm @ 6A, 10V |
4V @ 250µA |
11 nC @ 10 V |
300 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFZ14 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
43W (Tc) |
|
|
|
IPW60R099C7 |
Infineon Technologies |
MOSFET N-CH 600V 22A TO247 |
유품4240 pcs |
|
|
- |
600 V |
22A (Tc) |
99mOhm @ 9.7A, 10V |
4V @ 490µA |
42 nC @ 10 V |
1819 pF @ 400 V |
- |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ C7 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
PG-TO247 |
110W (Tc) |
|
|
|
FDMS7556S |
onsemi |
MOSFET N-CH 25V 35A/49A 8PQFN |
유품4540 pcs |
|
|
- |
25 V |
35A (Ta), 49A (Tc) |
1.2mOhm @ 35A, 10V |
3V @ 1mA |
133 nC @ 10 V |
8965 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
FDMS7556 |
Tape & Reel (TR) |
PowerTrench®, SyncFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
2.5W (Ta), 96W (Tc) |
|
|
|
EPC2036 |
EPC |
GANFET N-CH 100V 1.7A DIE |
유품66560 pcs |
|
|
- |
100 V |
1.7A (Ta) |
65mOhm @ 1A, 5V |
2.5V @ 600µA |
0.91 nC @ 5 V |
90 pF @ 50 V |
5V |
+6V, -4V |
N-Channel |
EPC20 |
Tape & Reel (TR) |
eGaN® |
GaNFET (Gallium Nitride) |
-40°C ~ 150°C (TJ) |
Surface Mount |
Die |
Die |
- |
|
|
|
2SJ632-TD-E |
onsemi |
2SJ632 - P-CHANNEL SILICON MOSFE |
유품67320 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
NTTFS5C670NLTAG |
onsemi |
MOSFET N-CH 60V 16A/70A 8WDFN |
유품33472 pcs |
|
|
- |
60 V |
16A (Ta), 70A (Tc) |
6.5mOhm @ 35A, 10V |
2V @ 250µA |
20 nC @ 10 V |
1400 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
NTTFS5 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WDFN (3.3x3.3) |
3.2W (Ta), 63W (Tc) |
|
|
|
IRLU3714PBF |
Infineon Technologies |
MOSFET N-CH 20V 36A I-PAK |
유품5210 pcs |
|
|
- |
20 V |
36A (Tc) |
20mOhm @ 18A, 10V |
3V @ 250µA |
9.7 nC @ 4.5 V |
670 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
47W (Tc) |
|
|
|
IRFU014PBF |
Vishay Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
유품63180 pcs |
|
|
- |
60 V |
7.7A (Tc) |
200mOhm @ 4.6A, 10V |
4V @ 250µA |
11 nC @ 10 V |
300 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFU014 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
TO-251AA |
2.5W (Ta), 25W (Tc) |
|
|
|
SI1304BDL-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 900MA SC70-3 |
유품3660 pcs |
|
|
- |
30 V |
900mA (Tc) |
270mOhm @ 900mA, 4.5V |
1.3V @ 250µA |
2.7 nC @ 4.5 V |
100 pF @ 15 V |
2.5V, 4.5V |
±12V |
N-Channel |
SI1304 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-70, SOT-323 |
SC-70-3 |
340mW (Ta), 370mW (Tc) |
|
|
|
AUIRL7732S2TR |
Infineon Technologies |
MOSFET N-CH 40V 14A DIRECTFET SC |
유품19374 pcs |
|
|
- |
40 V |
14A (Ta) |
6.6mOhm @ 35A, 10V |
2.5V @ 50µA |
33 nC @ 4.5 V |
2020 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
AUIRL7732 |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric SC |
DIRECTFET™ SC |
2.2W (Ta), 41W (Tc) |
|
|
|
NTLUS3C18PZTAG |
onsemi |
MOSFET P-CH 12V 4.4A 6UDFN |
유품3780 pcs |
|
|
- |
12 V |
4.4A (Ta) |
24mOhm @ 7A, 4.5V |
1V @ 250µA |
15.8 nC @ 4.5 V |
1570 pF @ 6 V |
1.8V, 4.5V |
±8V |
P-Channel |
NTLUS3 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-PowerUFDFN |
6-UDFN (1.6x1.6) |
660mW (Ta) |
|
|
|
IXFH10N100 |
IXYS |
MOSFET N-CH 1KV 10A TO-247AD |
유품2825 pcs |
|
|
- |
1000 V |
10A (Tc) |
1.2Ohm @ 5A, 10V |
4.5V @ 4mA |
155 nC @ 10 V |
4000 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH10 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
300W (Tc) |
|
|
|
DMG4496SSSQ-13 |
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SO-8 T&R 2 |
유품250240 pcs |
|
|
- |
30 V |
10A (Ta) |
21.5mOhm @ 10A, 10V |
2V @ 250µA |
10.2 nC @ 10 V |
493.5 pF @ 15 V |
4.5V, 10V |
±25V |
N-Channel |
DMG4496 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOP |
1.42W (Ta) |
|
|
|
SQP120N10-3M8_GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 120A TO220AB |
유품4980 pcs |
|
|
- |
100 V |
120A (Tc) |
3.8mOhm @ 20A, 10V |
3.5V @ 250µA |
190 nC @ 10 V |
7230 pF @ 25 V |
10V |
±20V |
N-Channel |
SQP120 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
250W (Tc) |
|
|
|
APT12057JFLL |
Microchip Technology |
MOSFET N-CH 1200V 19A ISOTOP |
유품578 pcs |
|
|
- |
1200 V |
19A (Tc) |
570mOhm @ 9.5A, 10V |
5V @ 2.5mA |
185 nC @ 10 V |
5155 pF @ 25 V |
- |
- |
N-Channel |
APT12057 |
Tube |
POWER MOS 7® |
MOSFET (Metal Oxide) |
- |
Chassis Mount |
SOT-227-4, miniBLOC |
ISOTOP® |
- |
|
|
|
FDMS86540 |
onsemi |
MOSFET N-CH 60V 20A/50A 8PQFN |
유품37120 pcs |
|
|
- |
60 V |
20A (Ta), 50A (Tc) |
3.4mOhm @ 20A, 10V |
4V @ 250µA |
90 nC @ 10 V |
6435 pF @ 30 V |
8V, 10V |
±20V |
N-Channel |
FDMS86 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
2.5W (Ta), 96W (Tc) |
|
|
|
IRF6637TR1 |
Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
유품3750 pcs |
|
|
- |
30 V |
14A (Ta), 59A (Tc) |
7.7mOhm @ 14A, 10V |
2.35V @ 250µA |
17 nC @ 4.5 V |
1330 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MP |
DIRECTFET™ MP |
2.3W (Ta), 42W (Tc) |
|
|
|
AOW11S60 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO262 |
유품26214 pcs |
|
|
- |
600 V |
11A (Tc) |
399mOhm @ 3.8A, 10V |
4.1V @ 250µA |
11 nC @ 10 V |
545 pF @ 100 V |
10V |
±30V |
N-Channel |
AOW11 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
178W (Tc) |
|
|
|
IRF7241PBF |
International Rectifier |
HEXFET POWER MOSFET |
유품4430 pcs |
|
|
- |
40 V |
6.2A (Ta) |
41mOhm @ 6.2A, 10V |
3V @ 250µA |
80 nC @ 10 V |
3220 pF @ 25 V |
4.5V, 10V |
±20V |
P-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
2.5W (Ta) |
|
|
|
BSZ0901NSIATMA1 |
Infineon Technologies |
MOSFET N-CH 30V 25A/40A TSDSON |
유품59930 pcs |
|
|
Schottky Diode (Body) |
30 V |
25A (Ta), 40A (Tc) |
2.1mOhm @ 20A, 10V |
2.2V @ 250µA |
41 nC @ 10 V |
2600 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
BSZ0901 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TSDSON-8-FL |
2.1W (Ta), 69W (Tc) |
|
|
|
IPU60R1K4C6 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품147670 pcs |
|
|
- |
650 V |
3.2A (Tc) |
1.4Ohm @ 1.1A, 10V |
3.5V @ 90µA |
9.4 nC @ 10 V |
200 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
PG-TO-251-3-341 |
28.4W (Tc) |
|
|
|
FCH150N65F-F155 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, N |
유품4690 pcs |
|
|
- |
650 V |
24A (Tc) |
150mOhm @ 12A, 10V |
5V @ 2.4mA |
94 nC @ 10 V |
3737 pF @ 100 V |
10V |
±20V |
N-Channel |
FCH150 |
Bulk |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247 Long Leads |
298W (Tc) |
|
|
|
AUIRFZ48Z |
Infineon Technologies |
AUIRFZ48Z - 55V-60V N-CHANNEL AU |
유품45360 pcs |
|
|
- |
55 V |
61A (Tc) |
11mOhm @ 37A, 10V |
4V @ 250µA |
64 nC @ 10 V |
1720 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
91W (Tc) |
|
|
|
FCH76N60NF |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 7 |
유품2861 pcs |
|
|
- |
600 V |
72.8A (Tc) |
38mOhm @ 38A, 10V |
5V @ 250µA |
300 nC @ 10 V |
11045 pF @ 100 V |
10V |
±30V |
N-Channel |
- |
Bulk |
SupreMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247 |
543W (Tc) |
|