|
|
SI7141DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8 |
유품35247 pcs |
|
|
- |
20 V |
60A (Tc) |
1.9mOhm @ 25A, 10V |
2.3V @ 250µA |
400 nC @ 10 V |
14300 pF @ 10 V |
4.5V, 10V |
±20V |
P-Channel |
SI7141 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
6.25W (Ta), 104W (Tc) |
|
|
|
FDMS86183 |
onsemi |
MOSFET N-CH 100V 51A 8PQFN |
유품52020 pcs |
|
|
- |
100 V |
51A (Tc) |
12.8mOhm @ 16A, 10V |
4V @ 90µA |
14 nC @ 6 V |
1515 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
FDMS86 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
63W (Tc) |
|
|
|
IRLHM620TRPBF |
Infineon Technologies |
MOSFET N-CH 20V 26A/40A PQFN |
유품69380 pcs |
|
|
- |
20 V |
26A (Ta), 40A (Tc) |
2.5mOhm @ 20A, 4.5V |
1.1V @ 50µA |
78 nC @ 4.5 V |
3620 pF @ 10 V |
2.5V, 10V |
±12V |
N-Channel |
IRLHM620 |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PQFN (3x3) |
2.7W (Ta), 37W (Tc) |
|
|
|
NTMFS4927NT1G |
onsemi |
MOSFET N-CH 30V 7.9A/38A 5DFN |
유품135850 pcs |
|
|
- |
30 V |
7.9A (Ta), 38A (Tc) |
7.3mOhm @ 30A, 10V |
2.2V @ 250µA |
16 nC @ 10 V |
913 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4927 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
920mW (Ta), 20.8W (Tc) |
|
|
|
FCH110N65F-F155 |
Fairchild Semiconductor |
MOSFET N-CH 650V 35A TO247 |
유품7813 pcs |
|
|
- |
650 V |
35A (Tc) |
110mOhm @ 17.5A, 10V |
5V @ 3.5mA |
145 nC @ 10 V |
4895 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
FRFET®, SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
357W (Tc) |
|
|
|
BFL4026-1E |
onsemi |
MOSFET N-CH 900V 3.5A TO220F-3FS |
유품13232 pcs |
|
|
- |
900 V |
3.5A (Tc) |
3.6Ohm @ 2.5A, 10V |
- |
33 nC @ 10 V |
650 pF @ 30 V |
10V |
±30V |
N-Channel |
BFL4026 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3FS |
2W (Ta), 35W (Tc) |
|
|
|
AUIRF3710ZSTRR |
International Rectifier |
MOSFET N-CH 100V 59A D2PAK |
유품29553 pcs |
|
|
- |
100 V |
59A (Tc) |
18mOhm @ 35A, 10V |
4V @ 250µA |
120 nC @ 10 V |
2900 pF @ 25 V |
- |
- |
N-Channel |
- |
- |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
- |
|
|
|
HUFA75637P3 |
Fairchild Semiconductor |
MOSFET N-CH 100V 44A TO220-3 |
유품71800 pcs |
|
|
- |
100 V |
44A (Tc) |
30mOhm @ 44A, 10V |
4V @ 250µA |
108 nC @ 20 V |
1700 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
155W (Tc) |
|
|
|
IPB034N06N3G |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품46300 pcs |
|
|
- |
60 V |
100A (Tc) |
3.4mOhm @ 100A, 10V |
4V @ 93µA |
130 nC @ 10 V |
11000 pF @ 30 V |
10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-7, D²Pak (6 Leads + Tab) |
PG-TO263-7-3 |
167W (Tc) |
|
|
|
BSC047N08NS3GATMA1 |
Infineon Technologies |
MOSFET N-CH 80V 18A/100A TDSON |
유품27088 pcs |
|
|
- |
80 V |
18A (Ta), 100A (Tc) |
4.7mOhm @ 50A, 10V |
3.5V @ 90µA |
69 nC @ 10 V |
4800 pF @ 40 V |
6V, 10V |
±20V |
N-Channel |
BSC047 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-1 |
2.5W (Ta), 125W (Tc) |
|
|
|
RSQ045N03TR |
Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
유품104070 pcs |
|
|
- |
30 V |
4.5A (Ta) |
38mOhm @ 4.5A, 10V |
2.5V @ 1mA |
9.5 nC @ 5 V |
520 pF @ 10 V |
4V, 10V |
±20V |
N-Channel |
RSQ045 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SOT-23-6 Thin, TSOT-23-6 |
TSMT6 (SC-95) |
600mW (Ta) |
|
|
|
IXFH40N85X |
IXYS |
MOSFET N-CH 850V 40A TO247 |
유품3343 pcs |
|
|
- |
850 V |
40A (Tc) |
145mOhm @ 500mA, 10V |
5.5V @ 4mA |
98 nC @ 10 V |
3700 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFH40 |
Tube |
HiPerFET™, Ultra X |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247 |
860W (Tc) |
|
|
|
FQP2N80 |
Fairchild Semiconductor |
MOSFET N-CH 800V 2.4A TO220-3 |
유품52330 pcs |
|
|
- |
800 V |
2.4A (Tc) |
6.3Ohm @ 1.2A, 10V |
5V @ 250µA |
15 nC @ 10 V |
550 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
85W (Tc) |
|
|
|
FDY302NZ |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품4760 pcs |
|
|
- |
20 V |
600mA (Ta) |
300mOhm @ 600mA, 4.5V |
1.5V @ 250µA |
1.1 nC @ 4.5 V |
60 pF @ 10 V |
1.8V, 4.5V |
±12V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-89, SOT-490 |
SOT-523F |
625mW (Ta) |
|
|
|
HUF76407D3 |
onsemi |
MOSFET N-CH 60V 12A IPAK |
유품5280 pcs |
|
|
- |
60 V |
12A (Tc) |
92mOhm @ 13A, 10V |
3V @ 250µA |
11.3 nC @ 10 V |
350 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
HUF76 |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
38W (Tc) |
|
|
|
RJK03B7DPA-00#J53 |
Renesas Electronics America Inc |
MOSFET N-CH 30V 30A 8WPAK |
유품53290 pcs |
|
|
- |
30 V |
30A (Ta) |
7.8mOhm @ 15A, 10V |
- |
11 nC @ 4.5 V |
1670 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
8-PowerWDFN |
8-WPAK |
30W (Tc) |
|
|
|
IPD35N10S3L-26 |
Infineon Technologies |
IPD35N10 - 75V-100V N-CHANNEL AU |
유품4470 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
|
|
|
APT6025BVRG |
Microchip Technology |
MOSFET N-CH 600V 25A TO247 |
유품2132 pcs |
|
|
- |
600 V |
25A (Tc) |
250mOhm @ 500mA, 10V |
4V @ 1mA |
275 nC @ 10 V |
5160 pF @ 25 V |
- |
- |
N-Channel |
APT6025 |
Tube |
POWER MOS V® |
MOSFET (Metal Oxide) |
- |
Through Hole |
TO-247-3 |
TO-247 [B] |
- |
|
|
|
NVMFS5C645NLT1G |
onsemi |
MOSFET N-CH 60V 22A/100A 5DFN |
유품3680 pcs |
|
|
- |
60 V |
22A (Ta), 100A (Tc) |
4mOhm @ 50A, 10V |
2V @ 250µA |
34 nC @ 10 V |
2200 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
NVMFS5 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.7W (Ta), 79W (Tc) |
|
|
|
FDP20AN06A0 |
Fairchild Semiconductor |
MOSFET N-CH 60V 9A/45A TO220-3 |
유품4700 pcs |
|
|
- |
60 V |
9A (Ta), 45A (Tc) |
20mOhm @ 45A, 10V |
4V @ 250µA |
19 nC @ 10 V |
950 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
90W (Tc) |
|
|
|
IXFN210N30X3 |
IXYS |
MOSFET N-CH 300V 210A SOT227B |
유품756 pcs |
|
|
- |
300 V |
210A (Tc) |
4.6mOhm @ 105A, 10V |
4.5V @ 8mA |
375 nC @ 10 V |
24200 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFN210 |
Tube |
HiPerFET™, Ultra X3 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
695W (Tc) |
|
|
|
BUK9614-60E,118 |
NXP Semiconductors |
NEXPERIA BUK9614-60E - POWER FIE |
유품5030 pcs |
|
|
- |
60 V |
56A (Tc) |
12.8mOhm @ 15A, 10V |
2.1V @ 1mA |
20.5 nC @ 5 V |
2651 pF @ 25 V |
5V |
±10V |
N-Channel |
- |
Bulk |
Automotive, AEC-Q101, TrenchMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
96W (Tc) |
|
|
|
DMT2004UPS-13 |
Diodes Incorporated |
MOSFET N-CH 24V 80A PWRDI5060-8 |
유품218460 pcs |
|
|
- |
24 V |
80A (Tc) |
5mOhm @ 20A, 10V |
1.45V @ 250µA |
53.7 nC @ 10 V |
1683 pF @ 15 V |
2.5V, 10V |
±12V |
N-Channel |
DMT2004 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PowerDI5060-8 |
3W (Ta) |
|
|
|
SUP70090E-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 50A TO220AB |
유품29916 pcs |
|
|
- |
100 V |
50A (Tc) |
8.9mOhm @ 20A, 10V |
4V @ 250µA |
50 nC @ 10 V |
1950 pF @ 50 V |
7.5V, 10V |
±20V |
N-Channel |
SUP70090 |
Bulk |
ThunderFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
125W (Tc) |
|
|
|
SI1403BDL-T1-E3 |
Vishay Siliconix |
MOSFET P-CH 20V 1.4A SC70-6 |
유품151150 pcs |
|
|
- |
20 V |
1.4A (Ta) |
150mOhm @ 1.5A, 4.5V |
1.3V @ 250µA |
4.5 nC @ 4.5 V |
- |
2.5V, 4.5V |
±12V |
P-Channel |
SI1403 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-TSSOP, SC-88, SOT-363 |
SC-70-6 |
568mW (Ta) |
|
|
|
AON7524 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 25A/28A 8DFN |
유품183200 pcs |
|
|
- |
30 V |
25A (Ta), 28A (Tc) |
3.3mOhm @ 20A, 10V |
1.2V @ 250µA |
50 nC @ 10 V |
2250 pF @ 15 V |
2.5V, 10V |
±12V |
N-Channel |
AON75 |
Tape & Reel (TR) |
AlphaMOS |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-DFN-EP (3x3) |
3.1W (Ta), 32W (Tc) |
|
|
|
BSC883N03LSG |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품4220 pcs |
|
|
- |
34 V |
17A (Ta), 98A (Tc) |
3.8mOhm @ 30A, 10V |
2.2V @ 250µA |
34 nC @ 10 V |
2800 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8 |
2.5W (Ta), 57W (Tc) |
|
|
|
IRFS4310PBF |
International Rectifier |
MOSFET N-CH 100V 130A D2PAK |
유품3670 pcs |
|
|
- |
100 V |
130A (Tc) |
7mOhm @ 75A, 10V |
4V @ 250µA |
250 nC @ 10 V |
7670 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
300W (Tc) |
|
|
|
FDZ208P |
Fairchild Semiconductor |
MOSFET P-CH 30V 12.5A 30BGA |
유품28202 pcs |
|
|
- |
30 V |
12.5A (Ta) |
10.5mOhm @ 12.5A, 10V |
3V @ 250µA |
35 nC @ 5 V |
2409 pF @ 15 V |
4.5V, 10V |
±25V |
P-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
30-WFBGA |
30-BGA (4x3.5) |
2.2W (Ta) |
|
|
|
ON5520215 |
NXP USA Inc. |
SMALL SIGNAL N-CHANNEL MOSFET |
유품2020250 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
EFC4612R-TR |
onsemi |
MOSFET N-CH 24V 6A EFCP |
유품4020 pcs |
|
|
- |
24 V |
6A (Ta) |
45mOhm @ 3A, 4.5V |
1.3V @ 1mA |
7 nC @ 4.5 V |
- |
- |
±12V |
N-Channel |
EFC4612 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
4-XFBGA |
EFCP1313-4CC-037 |
1.6W (Ta) |
|
|
|
MTM131270BBF |
Panasonic Electronic Components |
MOSFET P-CH 20V 2A MINI3-G3-B |
유품5300 pcs |
|
|
- |
20 V |
2A (Ta) |
130mOhm @ 1A, 4V |
1.1V @ 1mA |
- |
300 pF @ 10 V |
1.8 V, 4V |
±10V |
P-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
MINI3-G3-B |
700mW (Ta) |
|
|
|
SQM50034EL_GE3 |
Vishay Siliconix |
MOSFET N-CH 60V 100A TO263 |
유품23643 pcs |
|
|
- |
60 V |
100A (Tc) |
3.9mOhm @ 20A, 10V |
2.5V @ 250µA |
90 nC @ 10 V |
6100 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
SQM50034 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263 (D²Pak) |
150W (Tc) |
|
|
|
IRFW530ATM |
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET |
유품161060 pcs |
|
|
- |
100 V |
14A (Tc) |
110mOhm @ 7A, 10V |
4V @ 250µA |
36 nC @ 10 V |
790 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.8W (Ta), 55W (Tc) |
|
|
|
IRF830S |
Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
유품5270 pcs |
|
|
- |
500 V |
4.5A (Tc) |
1.5Ohm @ 2.7A, 10V |
4V @ 250µA |
38 nC @ 10 V |
610 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF830 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 74W (Tc) |
|
|
|
DMP2541UCB9-7 |
Diodes Incorporated |
MOSFET P-CH 25V 3.9A U-WLB1515-9 |
유품3890 pcs |
|
|
- |
25 V |
3.9A (Ta) |
40mOhm @ 2A, 4.5V |
1.1V @ 250µA |
7 nC @ 4.5 V |
850 pF @ 10 V |
1.8V, 4.5V |
-6V |
P-Channel |
DMP2541 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 155°C (TJ) |
Surface Mount |
9-UFBGA, WLBGA |
U-WLB1515-9 |
940mW (Ta) |
|
|
|
IRL6283MTRPBF |
International Rectifier |
DIRECTFET N-CHANNEL POWER MOSFET |
유품47070 pcs |
|
|
- |
20 V |
38A (Ta), 211A (Tc) |
0.75mOhm @ 50A, 10V |
1.1V @ 100µA |
158 nC @ 4.5 V |
8292 pF @ 10 V |
2.5V, 4.5V |
±12V |
N-Channel |
- |
Bulk |
HEXFET®, StrongIRFET™ |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MD |
DIRECTFET™ MD |
2.1W (Ta), 63W (Tc) |
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FDM606P |
Fairchild Semiconductor |
MOSFET P-CH 20V 6.8A 8MLP |
유품61520 pcs |
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- |
20 V |
6.8A (Tc) |
30mOhm @ 6.8A, 4.5V |
1.5V @ 250µA |
30 nC @ 4.5 V |
2200 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SMD, Flat Lead Exposed Pad |
8-MLP, MicroFET (3x2) |
1.92W (Ta) |
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NDD03N80ZT4G |
onsemi |
MOSFET N-CH 800V 2.9A DPAK-3 |
유품4350 pcs |
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- |
800 V |
2.9A (Tc) |
4.5Ohm @ 1.2A, 10V |
4.5V @ 50µA |
17 nC @ 10 V |
440 pF @ 25 V |
10V |
±30V |
N-Channel |
NDD03 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
DPAK-3 |
96W (Tc) |
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SIJ186DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 60V 23A/79.4A PPAK |
유품63720 pcs |
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- |
60 V |
23A (Ta), 79.4A (Tc) |
4.5mOhm @ 15A, 10V |
3.6V @ 250µA |
37 nC @ 10 V |
1710 pF @ 30 V |
6V, 10V |
±20V |
N-Channel |
SIJ186 |
Tape & Reel (TR) |
TrenchFET® Gen IV |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 57W (Tc) |
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FDPF10N50FT |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 9 |
유품43900 pcs |
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- |
500 V |
9A (Tc) |
850mOhm @ 4.5A, 10V |
5V @ 250µA |
24 nC @ 10 V |
1170 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
42W (Tc) |
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SIHP15N60E-GE3 |
Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB |
유품28923 pcs |
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- |
600 V |
15A (Tc) |
280mOhm @ 8A, 10V |
4V @ 250µA |
78 nC @ 10 V |
1350 pF @ 100 V |
10V |
±30V |
N-Channel |
SIHP15 |
Tube |
E |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
180W (Tc) |
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FQB12N60CTM |
Fairchild Semiconductor |
MOSFET N-CH 600V 12A D2PAK |
유품4860 pcs |
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- |
600 V |
12A (Tc) |
650mOhm @ 6A, 10V |
4V @ 250µA |
63 nC @ 10 V |
2290 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
3.13W (Ta), 225W (Tc) |
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DMP3012LPS-13 |
Diodes Incorporated |
MOSFET P-CH 30V 13.2A PWRDI5060 |
유품145980 pcs |
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- |
30 V |
13.2A (Ta) |
9mOhm @ 10A, 10V |
2.1V @ 250µA |
139 nC @ 10 V |
6807 pF @ 15 V |
4.5V, 10V |
±20V |
P-Channel |
DMP3012 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PowerDI5060-8 |
1.29W (Ta) |
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SUP60N06-12P-E3 |
Vishay Siliconix |
MOSFET N-CH 60V 60A TO220AB |
유품3990 pcs |
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- |
60 V |
60A (Tc) |
12mOhm @ 30A, 10V |
4.5V @ 250µA |
55 nC @ 10 V |
1970 pF @ 30 V |
10V |
±20V |
N-Channel |
SUP60 |
Bulk |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
3.25W (Ta), 100W (Tc) |
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RQ3E180GNTB |
Rohm Semiconductor |
MOSFET N-CH 30V 18A 8HSMT |
유품108290 pcs |
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- |
30 V |
18A (Ta) |
4.3mOhm @ 18A, 10V |
2.5V @ 1mA |
22.4 nC @ 10 V |
1520 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
RQ3E180 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-HSMT (3.2x3) |
2W (Ta) |
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DMG4800LFG-7 |
Diodes Incorporated |
MOSFET N-CH 30V 7.44A 8DFN |
유품174950 pcs |
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- |
30 V |
7.44A (Ta) |
17mOhm @ 9A, 10V |
1.5V @ 250µA |
9.47 nC @ 5 V |
798 pF @ 10 V |
4.5V, 10V |
±25V |
N-Channel |
DMG4800 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerUDFN |
U-DFN3030-8 |
940mW (Ta) |
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IXTH24N65X2 |
IXYS |
MOSFET N-CH 650V 24A TO247 |
유품9312 pcs |
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- |
650 V |
24A (Tc) |
145mOhm @ 12A, 10V |
5V @ 250µA |
36 nC @ 10 V |
2060 pF @ 25 V |
10V |
±30V |
N-Channel |
IXTH24 |
Tube |
Ultra X2 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247 (IXTH) |
390W (Tc) |
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APT1001R1BN |
Microchip Technology |
MOSFET N-CH 1000V 10.5A TO247AD |
유품4180 pcs |
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1000 V |
10.5A (Tc) |
1.1Ohm @ 5.25A, 10V |
4V @ 1mA |
130 nC @ 10 V |
2950 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
POWER MOS IV® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD |
310W (Tc) |
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FQPF4N90C |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 4 |
유품4320 pcs |
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- |
900 V |
4A (Tc) |
4.2Ohm @ 2A, 10V |
5V @ 250µA |
22 nC @ 10 V |
960 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
47W (Tc) |
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