|
|
FQI3N90TU |
onsemi |
MOSFET N-CH 900V 3.6A I2PAK |
유품3680 pcs |
|
|
- |
900 V |
3.6A (Tc) |
4.25Ohm @ 1.8A, 10V |
5V @ 250µA |
26 nC @ 10 V |
910 pF @ 25 V |
10V |
±30V |
N-Channel |
FQI3 |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK (TO-262) |
3.13W (Ta), 130W (Tc) |
|
|
|
APT10045JFLL |
Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
유품961 pcs |
|
|
- |
1000 V |
21A (Tc) |
460mOhm @ 11.5A, 10V |
5V @ 2.5mA |
154 nC @ 10 V |
4350 pF @ 25 V |
- |
- |
N-Channel |
APT10045 |
Tube |
POWER MOS 7® |
MOSFET (Metal Oxide) |
- |
Chassis Mount |
SOT-227-4, miniBLOC |
ISOTOP® |
- |
|
|
|
FDS6680 |
Fairchild Semiconductor |
MOSFET N-CH 30V 11.5A 8SOIC |
유품45920 pcs |
|
|
- |
30 V |
11.5A (Ta) |
10mOhm @ 11.5A, 10V |
3V @ 250µA |
27 nC @ 5 V |
2070 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
IRF6655TRPBF |
International Rectifier |
100V 19A DIRECTFET-MV |
유품5490 pcs |
|
|
- |
100 V |
4.2A (Ta), 19A (Tc) |
62mOhm @ 5A, 10V |
4.8V @ 25µA |
11.7 nC @ 10 V |
530 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric SH |
DIRECTFET™ SH |
2.2W (Ta), 42W (Tc) |
|
|
|
SIRA10DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
유품69690 pcs |
|
|
- |
30 V |
60A (Tc) |
3.7mOhm @ 10A, 10V |
2.2V @ 250µA |
51 nC @ 10 V |
2425 pF @ 15 V |
4.5V, 10V |
+20V, -16V |
N-Channel |
SIRA10 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 40W (Tc) |
|
|
|
HUF75545S3 |
onsemi |
MOSFET N-CH 80V 75A I2PAK |
유품3980 pcs |
|
|
- |
80 V |
75A (Tc) |
10mOhm @ 75A, 10V |
4V @ 250µA |
235 nC @ 20 V |
3750 pF @ 25 V |
10V |
±20V |
N-Channel |
HUF75 |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK (TO-262) |
270W (Tc) |
|
|
|
RJK0351DPA-00#J0 |
Renesas Electronics America Inc |
MOSFET N-CH 30V 40A 8WPAK |
유품35280 pcs |
|
|
- |
30 V |
40A (Ta) |
4.2mOhm @ 20A, 10V |
- |
17 nC @ 4.5 V |
2560 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WPAK |
45W (Tc) |
|
|
|
CSD15571Q2 |
Texas Instruments |
MOSFET N-CH 20V 22A 6SON |
유품181440 pcs |
|
|
- |
20 V |
22A (Ta) |
15mOhm @ 5A, 10V |
1.9V @ 250µA |
6.7 nC @ 10 V |
419 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
CSD15571 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-WDFN Exposed Pad |
6-SON (2x2) |
2.5W (Ta) |
|
|
|
FQB13N50CTM |
Fairchild Semiconductor |
MOSFET N-CH 500V 13A D2PAK |
유품4910 pcs |
|
|
- |
500 V |
13A (Tc) |
480mOhm @ 6.5A, 10V |
4V @ 250µA |
56 nC @ 10 V |
2055 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
195W (Tc) |
|
|
|
DMPH4025SFVWQ-13 |
Diodes Incorporated |
MOSFET P-CH 40V PWRDI3333 |
유품150400 pcs |
|
|
- |
40 V |
8.7A (Ta), 40A (Tc) |
25mOhm @ 30A, 10V |
1.8V @ 250µA |
38.6 nC @ 10 V |
1918 pF @ 20 V |
4.5V, 10V |
±20V |
P-Channel |
DMPH4025 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount, Wettable Flank |
8-PowerVDFN |
PowerDI3333-8 (SWP) Type UX |
2.3W (Ta), 60W (Tc) |
|
|
|
AOC2417 |
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 3.5A 4ALPHADFN |
유품4780 pcs |
|
|
- |
20 V |
3.5A (Ta) |
32mOhm @ 1.5A, 10V |
1.4V @ 250µA |
40 nC @ 10 V |
1355 pF @ 10 V |
2.5V, 10V |
±12V |
P-Channel |
AOC24 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
4-SMD, No Lead |
4-AlphaDFN (1.57x1.57) |
550mW (Ta) |
|
|
|
FDB088N08 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 8 |
유품4370 pcs |
|
|
- |
75 V |
120A (Tc) |
8.8mOhm @ 75A, 10V |
4V @ 250µA |
118 nC @ 10 V |
6595 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
160W (Tc) |
|
|
|
AUIRF8739L2TR |
Infineon Technologies |
MOSFET N-CH 40V 57A DIRECTFET |
유품9418 pcs |
|
|
- |
40 V |
57A (Ta), 545A (Tc) |
0.6mOhm @ 195A, 10V |
3.9V @ 250µA |
562 nC @ 10 V |
17890 pF @ 25 V |
10V |
40V |
N-Channel |
AUIRF8739 |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric L8 |
DirectFET™ Isometric L8 |
3.8W (Ta), 340W (Tc) |
|
|
|
CSD16410Q5A |
Texas Instruments |
MOSFET N-CH 25V 16A/59A 8VSON |
유품100840 pcs |
|
|
- |
25 V |
16A (Ta), 59A (Tc) |
8.5mOhm @ 17A, 10V |
2.3V @ 250µA |
5 nC @ 4.5 V |
740 pF @ 12.5 V |
4.5V, 10V |
+16V, -12V |
N-Channel |
CSD16410 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-VSONP (5x6) |
3W (Ta) |
|
|
|
HUF76423D3 |
Fairchild Semiconductor |
MOSFET N-CH 60V 20A IPAK |
유품105320 pcs |
|
|
- |
60 V |
20A (Tc) |
32mOhm @ 20A, 10V |
3V @ 250µA |
34 nC @ 10 V |
1060 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
85W (Tc) |
|
|
|
CSD25485F5T |
Texas Instruments |
MOSFET P-CH 20V 5.3A 3PICOSTAR |
유품41620 pcs |
|
|
- |
20 V |
5.3A (Ta) |
35mOhm @ 900mA, 8V |
1.3V @ 250µA |
3.5 nC @ 4.5 V |
533 pF @ 10 V |
1.8V, 8V |
-12V |
P-Channel |
CSD25485 |
Tape & Reel (TR) |
FemtoFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-XFDFN |
3-PICOSTAR |
1.4W (Ta) |
|
|
|
IRF6628TRPBF |
Infineon Technologies |
MOSFET N-CH 25V 27A DIRECTFET |
유품5410 pcs |
|
|
- |
25 V |
27A (Ta), 160A (Tc) |
2.5mOhm @ 27A, 10V |
2.35V @ 100µA |
47 nC @ 4.5 V |
3770 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 96W (Tc) |
|
|
|
AOT460 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 85A TO220 |
유품4500 pcs |
|
|
- |
60 V |
85A (Tc) |
7.5mOhm @ 30A, 10V |
4V @ 250µA |
88 nC @ 10 V |
4560 pF @ 30 V |
10V |
±20V |
N-Channel |
AOT46 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
268W (Tc) |
|
|
|
FDS5690 |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품5020 pcs |
|
|
- |
60 V |
7A (Ta) |
28mOhm @ 7A, 10V |
4V @ 250µA |
32 nC @ 10 V |
1107 pF @ 30 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
IPA50R520CP |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품4120 pcs |
|
|
- |
500 V |
7.1A (Tc) |
520mOhm @ 3.8A, 10V |
3.5V @ 250µA |
17 nC @ 10 V |
680 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-31 |
66W (Tc) |
|
|
|
AOT472 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 10A/140A TO220 |
유품3720 pcs |
|
|
- |
75 V |
10A (Ta), 140A (Tc) |
8.9mOhm @ 30A, 10V |
3.9V @ 250µA |
115 nC @ 10 V |
4500 pF @ 30 V |
10V |
±20V |
N-Channel |
AOT47 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
1.9W (Ta), 417W (Tc) |
|
|
|
SI7102DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK1212-8 |
유품4170 pcs |
|
|
- |
12 V |
35A (Tc) |
3.8mOhm @ 15A, 4.5V |
1V @ 250µA |
110 nC @ 8 V |
3720 pF @ 6 V |
2.5V, 4.5V |
±8V |
N-Channel |
SI7102 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-50°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
3.8W (Ta), 52W (Tc) |
|
|
|
IRL3103STRLPBF |
International Rectifier |
IRL3103 - HEXFET POWER MOSFET |
유품4870 pcs |
|
|
- |
30 V |
64A (Tc) |
12mOhm @ 34A, 10V |
1V @ 250µA |
33 nC @ 4.5 V |
1650 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
94W (Tc) |
|
|
|
HUFA76633S3S |
Fairchild Semiconductor |
MOSFET N-CH 100V 39A D2PAK |
유품4150 pcs |
|
|
- |
100 V |
39A (Tc) |
35mOhm @ 39A, 10V |
3V @ 250µA |
67 nC @ 10 V |
1820 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
145W (Tc) |
|
|
|
NTMFS4846NT1G |
onsemi |
MOSFET N-CH 30V 12.7A/100A 5DFN |
유품4420 pcs |
|
|
- |
30 V |
12.7A (Ta), 100A (Tc) |
3.4mOhm @ 30A, 10V |
2.5V @ 250µA |
53 nC @ 11.5 V |
3250 pF @ 12 V |
4.5V, 11.5V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
890mW (Ta), 55.5W (Tc) |
|
|
|
IRFH8303TRPBF |
Infineon Technologies |
MOSFET N-CH 30V 43A/100A 8PQFN |
유품32650 pcs |
|
|
- |
30 V |
43A (Ta), 100A (Tc) |
1.1mOhm @ 50A, 10V |
2.2V @ 150µA |
179 nC @ 10 V |
7736 pF @ 24 V |
4.5V, 10V |
±20V |
N-Channel |
IRFH8303 |
Tape & Reel (TR) |
HEXFET®, StrongIRFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
3.7W (Ta), 156W (Tc) |
|
|
|
FDP070AN06A0 |
Fairchild Semiconductor |
MOSFET N-CH 60V 15A/80A TO220-3 |
유품39813 pcs |
|
|
- |
60 V |
15A (Ta), 80A (Tc) |
7mOhm @ 80A, 10V |
4V @ 250µA |
66 nC @ 10 V |
3000 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
175W (Tc) |
|
|
|
IPP60R520CP |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품37190 pcs |
|
|
- |
600 V |
6.8A (Tc) |
520mOhm @ 3.8A, 10V |
3.5V @ 250µA |
31 nC @ 10 V |
630 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
66W (Tc) |
|
|
|
ATP212-TL-H |
onsemi |
MOSFET N-CH 60V 35A ATPAK |
유품4080 pcs |
|
|
- |
60 V |
35A (Ta) |
23mOhm @ 18A, 10V |
- |
34.5 nC @ 10 V |
1820 pF @ 20 V |
4V, 10V |
±20V |
N-Channel |
ATP212 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
ATPAK (2 Leads+Tab) |
ATPAK |
40W (Tc) |
|
|
|
MCH5837-TL-E |
onsemi |
MOSFET N-CH 20V 2A 5MCPH |
유품423550 pcs |
|
|
Schottky Diode (Isolated) |
20 V |
2A (Ta) |
145mOhm @ 1A, 4V |
- |
1.8 nC @ 4 V |
115 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
6-SMD (5 Leads), Flat Lead |
5-MCPH |
800mW (Ta) |
|
|
|
SIS892ADN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 28A PPAK1212-8 |
유품75630 pcs |
|
|
- |
100 V |
28A (Tc) |
33mOhm @ 10A, 10V |
3V @ 250µA |
19.5 nC @ 10 V |
550 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
SIS892 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
3.7W (Ta), 52W (Tc) |
|
|
|
PSMN1R0-40YSHX |
Nexperia USA Inc. |
MOSFET N-CH 40V 290A LFPAK56 |
유품13992 pcs |
|
|
Schottky Diode (Body) |
40 V |
290A (Ta) |
1mOhm @ 25A, 10V |
3.6V @ 1mA |
122 nC @ 10 V |
9433 pF @ 20 V |
10V |
±20V |
N-Channel |
PSMN1R0 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
SOT-1023, 4-LFPAK |
LFPAK56; Power-SO8 |
333W (Ta) |
|
|
|
NTLUS3A18PZTAG |
onsemi |
MOSFET P-CH 20V 5.1A 6UDFN |
유품4560 pcs |
|
|
- |
20 V |
5.1A (Ta) |
18mOhm @ 7A, 4.5V |
1V @ 250µA |
28 nC @ 4.5 V |
2240 pF @ 15 V |
1.5V, 4.5V |
±8V |
P-Channel |
NTLUS3 |
Tape & Reel (TR) |
µCool™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-UDFN Exposed Pad |
6-UDFN (2x2) |
700mW (Ta) |
|
|
|
FDZ202P |
onsemi |
MOSFET P-CH 20V 5.5A 12BGA |
유품3950 pcs |
|
|
- |
20 V |
5.5A (Ta) |
45mOhm @ 5.5A, 4.5V |
1.5V @ 250µA |
13 nC @ 4.5 V |
884 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
FDZ20 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
12-WFBGA |
12-BGA (2x2.5) |
2W (Ta) |
|
|
|
BSN20BK215 |
Nexperia USA Inc. |
SMALL SIGNAL N-CHANNEL MOSFET |
유품4820 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
PSMN0R9-30ULDX |
Nexperia USA Inc. |
MOSFET N-CH 30V 300A LFPAK56 |
유품40250 pcs |
|
|
- |
30 V |
300A (Ta) |
0.87mOhm @ 25A, 10V |
2.2V @ 1mA |
109 nC @ 10 V |
7668 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
PSMN0R9 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-1023, 4-LFPAK |
LFPAK56, Power-SO8 |
227W (Ta) |
|
|
|
FCH130N60 |
onsemi |
MOSFET N-CH 600V 28A TO247-3 |
유품4870 pcs |
|
|
- |
600 V |
28A (Tc) |
130mOhm @ 14A, 10V |
3.5V @ 250µA |
70 nC @ 10 V |
3590 pF @ 380 V |
10V |
±20V |
N-Channel |
FCH130 |
Tube |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
278W (Tc) |
|
|
|
2SJ645-E |
onsemi |
P-CHANNEL SMALL SIGNAL MOSFET |
유품33042 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
NVHL040N120SC1 |
onsemi |
SICFET N-CH 1200V 60A TO247-3 |
유품1929 pcs |
|
|
- |
1200 V |
60A (Tc) |
56mOhm @ 35A, 20V |
4.3V @ 10mA |
106 nC @ 20 V |
1781 pF @ 800 V |
20V |
+25V, -15V |
N-Channel |
NVHL040 |
Tube |
Automotive, AEC-Q101 |
SiCFET (Silicon Carbide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
348W (Tc) |
|
|
|
IXTQ48N20T |
IXYS |
MOSFET N-CH 200V 48A TO3P |
유품11634 pcs |
|
|
- |
200 V |
48A (Tc) |
50mOhm @ 24A, 10V |
4.5V @ 250µA |
60 nC @ 10 V |
3090 pF @ 25 V |
10V |
±30V |
N-Channel |
IXTQ48 |
Tube |
Trench |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 |
TO-3P |
250W (Tc) |
|
|
|
CSD17313Q2T |
Texas Instruments |
MOSFET N-CH 30V 5A 6WSON |
유품49420 pcs |
|
|
- |
30 V |
5A (Ta) |
30mOhm @ 4A, 8V |
1.8V @ 250µA |
2.7 nC @ 4.5 V |
340 pF @ 15 V |
3V, 8V |
+10V, -8V |
N-Channel |
CSD17313 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-WDFN Exposed Pad |
6-WSON (2x2) |
2.4W (Ta), 17W (Tc) |
|
|
|
IRFU5410PBF |
Infineon Technologies |
MOSFET P-CH 100V 13A IPAK |
유품100400 pcs |
|
|
- |
100 V |
13A (Tc) |
205mOhm @ 7.8A, 10V |
4V @ 250µA |
58 nC @ 10 V |
760 pF @ 25 V |
10V |
±20V |
P-Channel |
IRFU5410 |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
IPAK (TO-251AA) |
66W (Tc) |
|
|
|
STU65N3LLH5 |
STMicroelectronics |
MOSFET N CH 30V 65A IPAK |
유품52020 pcs |
|
|
- |
30 V |
65A (Tc) |
7.3mOhm @ 32.5A, 10V |
3V @ 250µA |
8 nC @ 4.5 V |
1290 pF @ 25 V |
4.5V, 10V |
±22V |
N-Channel |
STU65N |
Tube |
STripFET™ V |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
50W (Tc) |
|
|
|
APT50M75JFLL |
Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
유품922 pcs |
|
|
- |
500 V |
51A (Tc) |
75mOhm @ 25.5A, 10V |
5V @ 2.5mA |
125 nC @ 10 V |
5590 pF @ 25 V |
- |
- |
N-Channel |
APT50M75 |
Tube |
POWER MOS 7® |
MOSFET (Metal Oxide) |
- |
Chassis Mount |
SOT-227-4, miniBLOC |
ISOTOP® |
- |
|
|
|
SUD50N03-06AP-E3 |
Vishay Siliconix |
MOSFET N-CH 30V 90A TO252 |
유품61970 pcs |
|
|
- |
30 V |
90A (Tc) |
5.7mOhm @ 20A, 10V |
2.4V @ 250µA |
95 nC @ 10 V |
3800 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SUD50 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252AA |
10W (Ta), 83W (Tc) |
|
|
|
IPD060N03LG |
Infineon Technologies |
OPTLMOS N-CHANNEL POWER MOSFET |
유품4840 pcs |
|
|
- |
30 V |
50A (Tc) |
6mOhm @ 30A, 10V |
2.2V @ 250µA |
30 nC @ 10 V |
2300 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™3 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-11 |
56W (Tc) |
|
|
|
IRFS41N15DTRLP |
International Rectifier |
HEXFET POWER MOSFET |
유품5070 pcs |
|
|
- |
150 V |
41A (Tc) |
45mOhm @ 25A, 10V |
5.5V @ 250µA |
110 nC @ 10 V |
2520 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.1W (Ta) |
|
|
|
FDG361N |
Fairchild Semiconductor |
MOSFET N-CH 100V 600MA SC88 |
유품80440 pcs |
|
|
- |
100 V |
600mA (Ta) |
500mOhm @ 600mA, 10V |
4V @ 250µA |
5 nC @ 10 V |
153 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-TSSOP, SC-88, SOT-363 |
SC-88 (SC-70-6) |
420mW (Ta) |
|
|
|
SI4425DY |
Fairchild Semiconductor |
P-CHANNEL MOSFET |
유품5260 pcs |
|
|
- |
30 V |
11A (Ta) |
14mOhm @ 11A, 10V |
3V @ 250µA |
42 nC @ 5 V |
3000 pF @ 15 V |
4.5V, 10V |
±20V |
P-Channel |
- |
Bulk |
PowerTrench™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
1W (Ta) |
|
|
|
SIR876DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
유품3950 pcs |
|
|
- |
100 V |
40A (Tc) |
10.8mOhm @ 20A, 10V |
2.8V @ 250µA |
48 nC @ 10 V |
1640 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
SIR876 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 62.5W (Tc) |
|