|
|
NTMFS4H013NFT3G |
onsemi |
MOSFET N-CH 25V 43A/269A 5DFN |
유품4970 pcs |
|
|
- |
25 V |
43A (Ta), 269A (Tc) |
0.9mOhm @ 30A, 10V |
2.1V @ 250µA |
56 nC @ 10 V |
3923 pF @ 12 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
2.7W (Ta), 104W (Tc) |
|
|
|
IRLL3303PBF |
International Rectifier |
MOSFET N-CH 30V 4.6A SOT223 |
유품4460 pcs |
|
|
- |
30 V |
4.6A (Ta) |
31mOhm @ 4.6A, 10V |
1V @ 250µA |
50 nC @ 10 V |
840 pF @ 25 V |
- |
±16V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223 |
1W (Ta) |
|
|
|
IRF640LPBF |
Vishay Siliconix |
MOSFET N-CH 200V 18A TO262-3 |
유품5470 pcs |
|
|
- |
200 V |
18A (Tc) |
180mOhm @ 11A, 10V |
4V @ 250µA |
70 nC @ 10 V |
1300 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF640 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262-3 |
3.1W (Ta), 130W (Tc) |
|
|
|
FQP2N60C |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 2 |
유품4740 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
BSP299L6327 |
Infineon Technologies |
SMALL-SIGNAL N-CHANNEL MOSFET |
유품4480 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
2SK2158-T2B-A |
Renesas Electronics America Inc |
SMALL SIGNAL N-CHANNEL MOSFET |
유품240430 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FDU8876 |
Fairchild Semiconductor |
MOSFET N-CH 30V 15A/73A IPAK |
유품82710 pcs |
|
|
- |
30 V |
15A (Ta), 73A (Tc) |
8.2mOhm @ 35A, 10V |
2.5V @ 250µA |
47 nC @ 10 V |
1700 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
70W (Tc) |
|
|
|
NTMFS4985NFT1G |
onsemi |
MOSFET N-CH 30V 17.5A/65A 5DFN |
유품52050 pcs |
|
|
- |
30 V |
17.5A (Ta), 65A (Tc) |
3.4mOhm @ 30A, 10V |
2.3V @ 1mA |
30.5 nC @ 10 V |
2100 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4985 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
1.63W (Ta), 22.73W (Tc) |
|
|
|
IXTB30N100L |
IXYS |
MOSFET N-CH 1000V 30A PLUS264 |
유품803 pcs |
|
|
- |
1000 V |
30A (Tc) |
450mOhm @ 500mA, 20V |
5V @ 250µA |
545 nC @ 20 V |
13200 pF @ 25 V |
20V |
±30V |
N-Channel |
IXTB30 |
Tube |
Linear |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
PLUS264™ |
800W (Tc) |
|
|
|
SIE800DF-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 30V 50A 10POLARPAK |
유품5240 pcs |
|
|
- |
30 V |
50A (Tc) |
7.2mOhm @ 11A, 10V |
3V @ 250µA |
35 nC @ 10 V |
1600 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SIE800 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
10-PolarPAK® (S) |
10-PolarPAK® (S) |
5.2W (Ta), 104W (Tc) |
|
|
|
CSD13380F3 |
Texas Instruments |
MOSFET N-CH 12V 3.6A 3PICOSTAR |
유품330500 pcs |
|
|
- |
12 V |
3.6A (Ta) |
76mOhm @ 400mA, 4.5V |
1.3V @ 250µA |
1.2 nC @ 4.5 V |
156 pF @ 6 V |
1.8V, 4.5V |
8V |
N-Channel |
CSD13380 |
Tape & Reel (TR) |
FemtoFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-XFDFN |
3-PICOSTAR |
500mW (Ta) |
|
|
|
NVMFS4C05NWFT3G |
onsemi |
MOSFET N-CH 30V 24.7A/116A 5DFN |
유품4280 pcs |
|
|
- |
30 V |
24.7A (Ta), 116A (Tc) |
3.4mOhm @ 30A, 10V |
2.2V @ 250µA |
30 nC @ 10 V |
1972 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NVMFS4 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.61W (Ta), 79W (Tc) |
|
|
|
BSC118N10NSG |
Infineon Technologies |
BSC118N10 - 12V-300V N-CHANNEL P |
유품4990 pcs |
|
|
- |
100 V |
11A (Ta), 71A (Tc) |
11.8mOhm @ 50A, 10V |
4V @ 70µA |
56 nC @ 10 V |
3700 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 2 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-1 |
114W (Tc) |
|
|
|
AON7240 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 19A/40A 8DFN |
유품97240 pcs |
|
|
- |
40 V |
19A (Ta), 40A (Tc) |
5.1mOhm @ 20A, 10V |
2.4V @ 250µA |
35 nC @ 10 V |
2200 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
AON72 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-DFN-EP (3x3) |
3.1W (Ta), 36.7W (Tc) |
|
|
|
FDB8443 |
Fairchild Semiconductor |
MOSFET N-CH 40V 25A/120A TO263AB |
유품4710 pcs |
|
|
- |
40 V |
25A (Ta), 120A (Tc) |
3mOhm @ 80A, 10V |
4V @ 250µA |
185 nC @ 10 V |
9310 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
188W (Tc) |
|
|
|
ZXMN2A02X8TA |
Diodes Incorporated |
MOSFET N-CH 20V 6.2A 8MSOP |
유품4220 pcs |
|
|
- |
20 V |
6.2A (Ta) |
20mOhm @ 11A, 4.5V |
700mV @ 250µA (Min) |
18.6 nC @ 4.5 V |
1900 pF @ 10 V |
2.5V, 4.5V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
8-MSOP |
1.1W (Ta) |
|
|
|
BSC0802LSATMA1 |
Infineon Technologies |
MOSFET N-CH 100V 20A/100A TDSON |
유품26079 pcs |
|
|
- |
100 V |
20A (Ta), 100A (Tc) |
3.4mOhm @ 50A, 10V |
2.3V @ 115µA |
46 nC @ 4.5 V |
6500 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
BSC0802 |
Tape & Reel (TR) |
OptiMOS™ 5 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-7 |
156W (Tc) |
|
|
|
BUZ30A H3045A |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품4780 pcs |
|
|
- |
200 V |
21A (Tc) |
130mOhm @ 13.5A, 10V |
4V @ 1mA |
- |
1900 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SIPMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
125W (Tc) |
|
|
|
SPI80N03S2L-04 |
Infineon Technologies |
MOSFET N-CH 30V 80A TO262-3 |
유품5210 pcs |
|
|
- |
30 V |
80A (Tc) |
4.2mOhm @ 80A, 10V |
2V @ 130µA |
105 nC @ 10 V |
3900 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
SPI80N |
Tube |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
PG-TO262-3-1 |
188W (Tc) |
|
|
|
BUK6D210-60EX |
Nexperia USA Inc. |
MOSFET N-CH 60V 2.1A/5.7A 6DFN |
유품377260 pcs |
|
|
- |
60 V |
2.1A (Ta), 5.7A (Tc) |
210mOhm @ 2.1A, 10V |
2.7V @ 250µA |
3.8 nC @ 10 V |
110 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
BUK6D210 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
6-UDFN Exposed Pad |
DFN2020MD-6 |
2W (Ta), 15W (Tc) |
|
|
|
STFI13NK60Z |
STMicroelectronics |
MOSFET N-CH 600V 13A I2PAKFP |
유품18232 pcs |
|
|
- |
600 V |
13A (Tc) |
550mOhm @ 4.5A, 10V |
4.5V @ 100µA |
92 nC @ 10 V |
2030 pF @ 25 V |
10V |
±30V |
N-Channel |
STFI13N |
Tube |
SuperMESH™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Full Pack, I²Pak |
I2PAKFP (TO-281) |
35W (Tc) |
|
|
|
IRF530 |
Vishay Siliconix |
MOSFET N-CH 100V 14A TO220AB |
유품5070 pcs |
|
|
- |
100 V |
14A (Tc) |
160mOhm @ 8.4A, 10V |
4V @ 250µA |
26 nC @ 10 V |
670 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF530 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
88W (Tc) |
|
|
|
IRFR310BTF |
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET |
유품205770 pcs |
|
|
- |
400 V |
1.7A (Tc) |
3.4Ohm @ 850mA,10V |
4V @ 250µA |
10 nC @ 10 V |
330 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
DPAK |
2.5W (Ta), 26W (Tc) |
|
|
|
FQP65N06 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 6 |
유품5150 pcs |
|
|
- |
60 V |
65A (Tc) |
16mOhm @ 32.5A, 10V |
4V @ 250µA |
65 nC @ 10 V |
2410 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
150W (Tc) |
|
|
|
IRF6798MTRPBF |
Infineon Technologies |
MOSFET N-CH 25V 37A DIRECTFET |
유품4290 pcs |
|
|
Schottky Diode (Body) |
25 V |
37A (Ta), 197A (Tc) |
1.3mOhm @ 37A, 10V |
2.35V @ 150µA |
75 nC @ 4.5 V |
6560 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 78W (Tc) |
|
|
|
FDMS0300S |
onsemi |
MOSFET N-CH 30V 31A/49A 8PQFN |
유품41660 pcs |
|
|
- |
30 V |
31A (Ta), 49A (Tc) |
1.8mOhm @ 30A, 10V |
3V @ 1mA |
133 nC @ 10 V |
8705 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
FDMS0300 |
Tape & Reel (TR) |
PowerTrench®, SyncFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
2.5W (Ta), 96W (Tc) |
|
|
|
AOW4S60 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO262 |
유품63230 pcs |
|
|
- |
600 V |
4A (Tc) |
900mOhm @ 2A, 10V |
4.1V @ 250µA |
6 nC @ 10 V |
263 pF @ 100 V |
10V |
±30V |
N-Channel |
AOW4 |
Tube |
aMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
83W (Tc) |
|
|
|
FDA16N50LDTU |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, N |
유품29299 pcs |
|
|
- |
500 V |
16.5A (Tc) |
380mOhm @ 8.3A, 10V |
5V @ 250µA |
45 nC @ 10 V |
1945 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 (Formed Leads) |
TO-3PN (L-Forming) |
205W (Tc) |
|
|
|
2SK3289ANTL-E |
Renesas Electronics America Inc |
N-CHANNEL MOSFET |
유품180370 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
SUM23N15-73-E3 |
Vishay Siliconix |
MOSFET N-CH 150V 23A TO263 |
유품4960 pcs |
|
|
- |
150 V |
23A (Tc) |
73mOhm @ 15A, 10V |
4V @ 250µA |
35 nC @ 10 V |
1290 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
SUM23 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263 (D²Pak) |
3.75W (Ta), 100W (Tc) |
|
|
|
FQP32N12V2 |
Fairchild Semiconductor |
MOSFET N-CH 120V 32A TO220-3 |
유품46040 pcs |
|
|
- |
120 V |
32A (Tc) |
50mOhm @ 16A, 10V |
4V @ 250µA |
53 nC @ 10 V |
1860 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
150W (Tc) |
|
|
|
CSD19531Q5A |
Texas Instruments |
MOSFET N-CH 100V 100A 8VSON |
유품50770 pcs |
|
|
- |
100 V |
100A (Tc) |
6.4mOhm @ 16A, 10V |
3.3V @ 250µA |
48 nC @ 10 V |
3870 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
CSD19531 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-VSONP (5x6) |
3.3W (Ta), 125W (Tc) |
|
|
|
FDN342P |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품4820 pcs |
|
|
- |
20 V |
2A (Ta) |
80mOhm @ 2A, 4.5V |
1.5V @ 250µA |
9 nC @ 4.5 V |
635 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23-3 |
500mW (Ta) |
|
|
|
FQP16N15 |
Fairchild Semiconductor |
MOSFET N-CH 150V 16.4A TO220-3 |
유품56160 pcs |
|
|
- |
150 V |
16.4A (Tc) |
160mOhm @ 8.2A, 10V |
4V @ 250µA |
30 nC @ 10 V |
910 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
108W (Tc) |
|
|
|
BUZ32H3045A |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품4380 pcs |
|
|
- |
200 V |
9.5A (Tc) |
400mOhm @ 6A, 10V |
4V @ 1mA |
- |
530 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SIPMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
75W (Tc) |
|
|
|
AON7401 |
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 12A/35A 8DFN |
유품4310 pcs |
|
|
- |
30 V |
12A (Ta), 35A (Tc) |
14mOhm @ 9A, 10V |
3V @ 250µA |
39 nC @ 10 V |
2600 pF @ 15 V |
6V, 10V |
±25V |
P-Channel |
AON740 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-DFN-EP (3x3) |
3.1W (Ta), 29W (Tc) |
|
|
|
FDMC2512SDC |
onsemi |
MOSFET N-CH 25V 32A 8PQFN |
유품4000 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
FDMC25 |
Tape & Reel (TR) |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IRFBC40ASTRL |
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
유품4310 pcs |
|
|
- |
600 V |
6.2A (Tc) |
1.2Ohm @ 3.7A, 10V |
4V @ 250µA |
42 nC @ 10 V |
1036 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFBC40 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
125W (Tc) |
|
|
|
FQI4N90TU |
onsemi |
MOSFET N-CH 900V 4.2A I2PAK |
유품5060 pcs |
|
|
- |
900 V |
4.2A (Tc) |
3.3Ohm @ 2.1A, 10V |
5V @ 250µA |
30 nC @ 10 V |
1100 pF @ 25 V |
10V |
±30V |
N-Channel |
FQI4N90 |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK (TO-262) |
3.13W (Ta), 140W (Tc) |
|
|
|
SIA430DJT-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 12A PPAK SC70-6 |
유품147910 pcs |
|
|
- |
20 V |
12A (Tc) |
13.5mOhm @ 7A, 10V |
3V @ 250µA |
18 nC @ 10 V |
800 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
SIA430 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-70-6 |
PowerPAK® SC-70-6 Single |
19.2W (Tc) |
|
|
|
IRF9610S |
Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
유품5370 pcs |
|
|
- |
200 V |
1.8A (Tc) |
3Ohm @ 900mA, 10V |
4V @ 250µA |
11 nC @ 10 V |
170 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9610 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3W (Ta), 20W (Tc) |
|
|
|
NP80N055KLE-E1-AY |
Renesas |
NP80N055KLE-E1-AY - SWITCHINGN-C |
유품14813 pcs |
|
|
- |
55 V |
80A (Tc) |
11mOhm @ 40A, 10V |
2.5V @ 250µA |
75 nC @ 10 V |
4400 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
175°C |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263-3 |
1.8W (Ta), 120W (Tc) |
|
|
|
STK850 |
STMicroelectronics |
MOSFET N-CH 30V 30A POLARPAK |
유품5460 pcs |
|
|
- |
30 V |
30A (Tc) |
2.9mOhm @ 15A, 10V |
2.5V @ 250µA |
32.5 nC @ 4.5 V |
3150 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
STK8 |
Tape & Reel (TR) |
STripFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PolarPak® |
PolarPak® |
5.2W (Tc) |
|
|
|
IRF7805PBF |
International Rectifier |
MOSFET N-CH 30V 13A 8SO |
유품4740 pcs |
|
|
- |
30 V |
13A (Ta) |
11mOhm @ 7A, 4.5V |
3V @ 250µA |
31 nC @ 5 V |
- |
- |
±12V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
2.5W (Ta) |
|
|
|
APT29F100B2 |
Microchip Technology |
MOSFET N-CH 1000V 30A T-MAX |
유품2549 pcs |
|
|
- |
1000 V |
30A (Tc) |
440mOhm @ 16A, 10V |
5V @ 2.5mA |
260 nC @ 10 V |
8500 pF @ 25 V |
10V |
±30V |
N-Channel |
APT29F100 |
Tube |
POWER MOS 8™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 Variant |
T-MAX™ [B2] |
1040W (Tc) |
|
|
|
PSMN035-150P |
NXP USA Inc. |
N-CHANNEL POWER MOSFET |
유품3670 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FDN372S |
Fairchild Semiconductor |
MOSFET N-CH 30V 2.6A SUPERSOT3 |
유품263680 pcs |
|
|
- |
30 V |
2.6A (Ta) |
40mOhm @ 2.6A, 10V |
3V @ 1mA |
8.1 nC @ 5 V |
630 pF @ 15 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23-3 |
500mW (Ta) |
|
|
|
IRFR220TRRPBF |
Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
유품62510 pcs |
|
|
- |
200 V |
4.8A (Tc) |
800mOhm @ 2.9A, 10V |
4V @ 250µA |
14 nC @ 10 V |
260 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR220 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
|
|
|
FQA32N20C |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품23467 pcs |
|
|
- |
200 V |
32A (Tc) |
82mOhm @ 16A, 10V |
4V @ 250µA |
110 nC @ 10 V |
2220 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 |
TO-3PN |
204W (Tc) |
|
|
|
IPA60R165CP |
Infineon Technologies |
MOSFET N-CH 600V 21A TO220 |
유품5140 pcs |
|
|
- |
600 V |
21A (Tc) |
165mOhm @ 12A, 10V |
3.5V @ 790µA |
52 nC @ 10 V |
2000 pF @ 100 V |
- |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220 Full Pack |
34W (Tc) |
|