|
|
RW1C015UNT2R |
Rohm Semiconductor |
MOSFET N-CH 20V 1.5A 6WEMT |
유품5210 pcs |
|
|
- |
20 V |
1.5A (Ta) |
180mOhm @ 1.5A, 4.5V |
1V @ 1mA |
1.8 nC @ 4.5 V |
110 pF @ 10 V |
1.5V, 4.5V |
±10V |
N-Channel |
RW1C015 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
6-SMD, Flat Leads |
6-WEMT |
400mW (Ta) |
|
|
|
FDMC0202S |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR |
유품131000 pcs |
|
|
- |
25 V |
22.5A (Ta), 40A (Tc) |
3.15mOhm @ 22.5A, 10V |
3V @ 1mA |
44 nC @ 10 V |
2705 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (3.3x3.3) |
2.3W (Ta), 52W (Tc) |
|
|
|
AUIRLR3114Z |
International Rectifier |
AUTOMOTIVE POWER MOSFET |
유품39742 pcs |
|
|
- |
40 V |
42A (Tc) |
4.9mOhm @ 42A, 10V |
2.5V @ 100µA |
56 nC @ 4.5 V |
3810 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-PAK (TO-252AA) |
140W (Tc) |
|
|
|
AON6270 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 31.5A/85A 8DFN |
유품4860 pcs |
|
|
- |
75 V |
31.5A (Ta), 85A (Tc) |
3.9mOhm @ 20A, 10V |
3.2V @ 250µA |
85 nC @ 10 V |
4100 pF @ 37.5 V |
6V, 10V |
±20V |
N-Channel |
AON62 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerSMD, Flat Leads |
8-DFN (5x6) |
7.3W (Ta), 83W (Tc) |
|
|
|
DMPH6050SFGQ-7 |
Diodes Incorporated |
MOSFET P-CH 60V PWRDI3333 |
유품104840 pcs |
|
|
- |
60 V |
6.1A (Ta), 18A (Tc) |
50mOhm @ 7A, 10V |
3V @ 250µA |
24.1 nC @ 10 V |
1293 pF @ 30 V |
4.5V, 10V |
±20V |
P-Channel |
DMPH6050 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerDI3333-8 |
1.2W (Ta) |
|
|
|
FCA20N60F |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 2 |
유품3700 pcs |
|
|
- |
600 V |
20A (Tc) |
190mOhm @ 10A, 10V |
5V @ 250µA |
98 nC @ 10 V |
3080 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
SuperFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 |
TO-3PN |
208W (Tc) |
|
|
|
SI7794DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 28.6A/60A PPAK |
유품4310 pcs |
|
|
Schottky Diode (Body) |
30 V |
28.6A (Ta), 60A (Tc) |
3.4mOhm @ 20A, 10V |
2.5V @ 250µA |
72 nC @ 10 V |
2520 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SI7794 |
Tape & Reel (TR) |
SkyFET®, TrenchFET® Gen III |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 48W (Tc) |
|
|
|
NTMFS4C01NT3G |
onsemi |
MOSFET N-CH 30V 47A/303A 5DFN |
유품14732 pcs |
|
|
- |
30 V |
47A (Ta), 303A (Tc) |
0.9mOhm @ 30A, 10V |
2.2V @ 250µA |
139 nC @ 10 V |
10144 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.2W (Ta), 134W (Tc) |
|
|
|
DMP1012UFDF-7 |
Diodes Incorporated |
MOSFET P-CH 12V 12.6A/20A 6UDFN |
유품359940 pcs |
|
|
- |
12 V |
12.6A (Ta), 20A (Tc) |
15mOhm @ 5A, 4.5V |
900mV @ 250µA |
31 nC @ 8 V |
1344 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
DMP1012 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-UDFN Exposed Pad |
U-DFN2020-6 (Type F) |
720mW (Ta) |
|
|
|
AUIRLR3705Z |
International Rectifier |
AUTOMOTIVE HEXFET N-CHANNEL |
유품36863 pcs |
|
|
- |
55 V |
42A (Tc) |
8mOhm @ 42A, 10V |
3V @ 250µA |
66 nC @ 5 V |
2900 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
130W (Tc) |
|
|
|
EPC2010C |
EPC |
GANFET N-CH 200V 22A DIE OUTLINE |
유품11211 pcs |
|
|
- |
200 V |
22A (Ta) |
25mOhm @ 12A, 5V |
2.5V @ 3mA |
5.3 nC @ 5 V |
540 pF @ 100 V |
5V |
+6V, -4V |
N-Channel |
EPC20 |
Tape & Reel (TR) |
eGaN® |
GaNFET (Gallium Nitride) |
-40°C ~ 150°C (TJ) |
Surface Mount |
Die |
Die |
- |
|
|
|
CSD18510KTT |
Texas Instruments |
MOSFET N-CH 40V 274A DDPAK |
유품16876 pcs |
|
|
- |
40 V |
274A (Tc) |
1.7mOhm @ 100A, 10V |
2.3V @ 250µA |
153 nC @ 10 V |
11400 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
CSD18510 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
DDPAK/TO-263-3 |
250W (Ta) |
|
|
|
2N7000 |
Diotec Semiconductor |
MOSFET, TO-92, 60V, 0.2A, N, 0.3 |
유품666000 pcs |
|
|
- |
60 V |
200mA (Ta) |
5Ohm @ 500mA, 10V |
3V @ 1mA |
- |
60 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Strip |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Through Hole |
TO-226-3, TO-92-3 (TO-226AA) |
TO-92 |
350mW (Ta) |
|
|
|
IRFZ34 |
Vishay Siliconix |
MOSFET N-CH 60V 30A TO220AB |
유품4600 pcs |
|
|
- |
60 V |
30A (Tc) |
50mOhm @ 18A, 10V |
4V @ 250µA |
46 nC @ 10 V |
1200 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFZ34 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
88W (Tc) |
|
|
|
FQD6N40CTM |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 4 |
유품3860 pcs |
|
|
- |
400 V |
4.5A (Tc) |
1Ohm @ 2.25A, 10V |
4V @ 250µA |
20 nC @ 10 V |
625 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
2.5W (Ta), 48W (Tc) |
|
|
|
IRF710 |
onsemi |
MOSFET N-CH 400V 2A TO220AB |
유품78600 pcs |
|
|
- |
400 V |
2A (Tc) |
3.6Ohm @ 1.2A, 10V |
4V @ 250µA |
17 nC @ 10 V |
170 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
36W (Tc) |
|
|
|
FDW264P |
Fairchild Semiconductor |
MOSFET P-CH 20V 9.7A 8TSSOP |
유품22683 pcs |
|
|
- |
20 V |
9.7A (Ta) |
10mOhm @ 9.7A, 4.5V |
1.5V @ 250µA |
135 nC @ 5 V |
7225 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-TSSOP (0.173", 4.40mm Width) |
8-TSSOP |
1.3W (Ta) |
|
|
|
RFD12N06RLE |
onsemi |
MOSFET N-CH 60V 18A IPAK |
유품4280 pcs |
|
|
- |
60 V |
18A (Tc) |
63mOhm @ 18A, 10V |
3V @ 250µA |
15 nC @ 10 V |
485 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
RFD12 |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
40W (Tc) |
|
|
|
IPA60R180C7 |
Infineon Technologies |
9A, 600V, 0.18OHM, N-CHANNEL MOS |
유품4080 pcs |
|
|
- |
600 V |
9A (Tc) |
180mOhm @ 5.3A, 10V |
4V @ 260µA |
24 nC @ 10 V |
1080 pF @ 400 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-111 |
29W (Tc) |
|
|
|
IPI075N15N3G |
Infineon Technologies |
OPTLMOS N-CHANNEL POWER MOSFET |
유품4930 pcs |
|
|
- |
150 V |
120A (Tc) |
7.5mOhm @ 100A, 10V |
4V @ 270µA |
93 nC @ 10 V |
5470 pF @ 75 V |
8V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
PG-TO262-3-1 |
300W (Tc) |
|
|
|
FQN1N50CTA |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품4610 pcs |
|
|
- |
500 V |
380mA (Tc) |
6Ohm @ 190mA, 10V |
4V @ 250µA |
6.4 nC @ 10 V |
195 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
TO-92-3 |
890mW (Ta), 2.08W (Tc) |
|
|
|
IXFH75N10 |
IXYS |
MOSFET N-CH 100V 75A TO247AD |
유품4541 pcs |
|
|
- |
100 V |
75A (Tc) |
20mOhm @ 37.5A, 10V |
4V @ 4mA |
260 nC @ 10 V |
4500 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH75 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
300W (Tc) |
|
|
|
SIRA28BDP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 18A/38A PPAK SO8 |
유품156330 pcs |
|
|
- |
30 V |
18A (Ta), 38A (Tc) |
7.5mOhm @ 10A, 10V |
2.4V @ 250µA |
14 nC @ 10 V |
582 pF @ 15 V |
4.5V, 10V |
+20V, -16V |
N-Channel |
SIRA28 |
Tape & Reel (TR) |
TrenchFET® Gen IV |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
3.8W (Ta), 17W (Tc) |
|
|
|
DMS3016SSSA-13 |
Diodes Incorporated |
MOSFET N-CH 30V 9.8A 8SO |
유품4040 pcs |
|
|
Schottky Diode (Body) |
30 V |
9.8A (Ta) |
13mOhm @ 9.8A, 10V |
2.3V @ 250µA |
43 nC @ 10 V |
1849 pF @ 15 V |
4.5V, 10V |
±12V |
N-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
1.54W (Ta) |
|
|
|
PSMN5R6-60YLX |
Nexperia USA Inc. |
MOSFET N-CH 60V 100A LFPAK56 |
유품40950 pcs |
|
|
- |
60 V |
100A (Tc) |
5.6mOhm @ 25A, 10V |
2.1V @ 1mA |
66.8 nC @ 10 V |
5026 pF @ 25 V |
5V, 10V |
±20V |
N-Channel |
PSMN5R6 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
SC-100, SOT-669 |
LFPAK56, Power-SO8 |
167W (Tc) |
|
|
|
IRLU3714ZPBF |
Infineon Technologies |
MOSFET N-CH 20V 37A I-PAK |
유품4330 pcs |
|
|
- |
20 V |
37A (Tc) |
15mOhm @ 15A, 10V |
2.55V @ 250µA |
7.1 nC @ 4.5 V |
560 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
35W (Tc) |
|
|
|
FDMS3006SDC |
onsemi |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품28808 pcs |
|
|
- |
30 V |
34A (Ta) |
1.9mOhm @ 30A, 10V |
3V @ 1mA |
80 nC @ 10 V |
5725 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
Dual Cool™, PowerTrench®, SyncFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
Dual Cool™56 |
3.3W (Ta), 89W (Tc) |
|
|
|
AUIRFS8408-7P |
International Rectifier |
MOSFET N-CH 40V 195A D2PAK |
유품4310 pcs |
|
|
- |
40 V |
195A (Tc) |
1.6mOhm @ 100A, 10V |
3.9V @ 250µA |
324 nC @ 10 V |
10820 pF @ 25 V |
- |
±20V |
N-Channel |
- |
Bulk |
Automotive, AEC-Q101, HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
294W (Tc) |
|
|
|
BSZ099N06LS5ATMA1 |
Infineon Technologies |
MOSFET N-CH 60V 46A TSDSON |
유품114580 pcs |
|
|
Standard |
60 V |
46A (Tc) |
9.9mOhm @ 20A, 10V |
2.3V @ 14µA |
3.1 nC @ 4.5 V |
1300 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
BSZ099 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TSDSON-8-FL |
36W (Tc) |
|
|
|
FQPF4N80 |
Fairchild Semiconductor |
MOSFET N-CH 800V 2.2A TO220F |
유품44670 pcs |
|
|
- |
800 V |
2.2A (Tc) |
3.6Ohm @ 1.1A, 10V |
5V @ 250µA |
25 nC @ 10 V |
880 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
43W (Tc) |
|
|
|
FDU8882 |
onsemi |
MOSFET N-CH 30V 12.6A/55A IPAK |
유품5130 pcs |
|
|
- |
30 V |
12.6A (Ta), 55A (Tc) |
11.5mOhm @ 35A, 10V |
2.5V @ 250µA |
33 nC @ 10 V |
1260 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
FDU88 |
Tube |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
55W (Tc) |
|
|
|
FDD8796 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품102720 pcs |
|
|
- |
25 V |
35A (Tc) |
5.7mOhm @ 35A, 10V |
2.5V @ 250µA |
52 nC @ 10 V |
2610 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
88W (Tc) |
|
|
|
AOTF5N50 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 5A TO220-3F |
유품70090 pcs |
|
|
- |
500 V |
5A (Tc) |
1.5Ohm @ 2.5A, 10V |
4.5V @ 250µA |
19 nC @ 10 V |
620 pF @ 25 V |
10V |
±30V |
N-Channel |
AOTF5 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F |
35W (Tc) |
|
|
|
AOB280L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 20.5A/140A TO263 |
유품14169 pcs |
|
|
- |
80 V |
20.5A (Ta), 140A (Tc) |
2.2mOhm @ 20A, 10V |
3.4V @ 250µA |
224 nC @ 10 V |
11135 pF @ 40 V |
6V, 10V |
±20V |
N-Channel |
AOB280 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263 (D2Pak) |
2.1W (Ta), 333W (Tc) |
|
|
|
SQJ850EP-T1_GE3 |
Vishay Siliconix |
MOSFET N-CH 60V 24A PPAK SO-8 |
유품51750 pcs |
|
|
- |
60 V |
24A (Tc) |
23mOhm @ 10.3A, 10V |
2.5V @ 250µA |
30 nC @ 10 V |
1225 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
SQJ850 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
45W (Tc) |
|
|
|
BUK9M35-80EX |
Nexperia USA Inc. |
MOSFET N-CH 80V 26A LFPAK33 |
유품101780 pcs |
|
|
- |
80 V |
26A (Tc) |
31mOhm @ 5A, 10V |
2.1V @ 1mA |
13.5 nC @ 5 V |
1804 pF @ 25 V |
5V |
±10V |
N-Channel |
BUK9M35 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
SOT-1210, 8-LFPAK33 (5-Lead) |
LFPAK33 |
62W (Tc) |
|
|
|
DMN10H170SFGQ-13 |
Diodes Incorporated |
MOSFET N-CH 100V PWRDI3333 |
유품133500 pcs |
|
|
- |
100 V |
2.9A (Ta), 8.5A (Tc) |
122mOhm @ 3.3A, 10V |
3V @ 250µA |
14.9 nC @ 10 V |
870.7 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
DMN10 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerDI3333-8 |
940mW (Ta) |
|
|
|
FCP104N60 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품9324 pcs |
|
|
- |
600 V |
37A (Tc) |
104mOhm @ 18.5A, 10V |
3.5V @ 250µA |
82 nC @ 10 V |
4165 pF @ 380 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
357W (Tc) |
|
|
|
IRFIB41N15DPBF |
International Rectifier |
HEXFET N-CHANNEL POWER MOSFET |
유품4500 pcs |
|
|
- |
150 V |
41A (Tc) |
45mOhm @ 25A, 10V |
5.5V @ 250µA |
110 nC @ 10 V |
2520 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220AB Full-Pak |
48W (Tc) |
|
|
|
MCH3383-TL-H |
Sanyo |
MOSFET P-CH 12V 3.5A SC70 |
유품260380 pcs |
|
|
- |
12 V |
3.5A (Ta) |
69mOhm @ 1.5A, 2.5V |
800mV @ 1mA |
6.2 nC @ 2.5 V |
1010 pF @ 6 V |
- |
±5V |
P-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
3-SMD, Flat Lead |
SC-70FL/MCPH3 |
1W (Ta) |
|
|
|
IPW65R190C6 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품5350 pcs |
|
|
- |
650 V |
20.2A (Tc) |
190mOhm @ 7.3A, 10V |
3.5V @ 730µA |
73 nC @ 10 V |
1620 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
PG-TO247-3-41 |
151W (Tc) |
|
|
|
FDD20AN06A0 |
Fairchild Semiconductor |
MOSFET N-CH 60V 8A/45A TO252AA |
유품4910 pcs |
|
|
- |
60 V |
8A (Ta), 45A (Tc) |
20mOhm @ 45A, 10V |
4V @ 250µA |
19 nC @ 10 V |
950 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
90W (Tc) |
|
|
|
IRFB17N50L |
Vishay Siliconix |
MOSFET N-CH 500V 16A TO220AB |
유품3750 pcs |
|
|
- |
500 V |
16A (Tc) |
320mOhm @ 9.9A, 10V |
5V @ 250µA |
130 nC @ 10 V |
2760 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFB17 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
220W (Tc) |
|
|
|
AUIRF7738L2TR |
International Rectifier |
MOSFET N-CH 40V 35A/130A DIRECT |
유품5310 pcs |
|
|
- |
40 V |
35A (Ta), 130A (Tc) |
1.6mOhm @ 109A, 10V |
4V @ 250µA |
194 nC @ 10 V |
7471 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric L6 |
DIRECTFET L6 |
3.3W (Ta), 94W (Tc) |
|
|
|
IRFR020PBF |
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
유품4170 pcs |
|
|
- |
60 V |
14A (Tc) |
100mOhm @ 8.4A, 10V |
4V @ 250µA |
25 nC @ 10 V |
640 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR020 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
|
|
|
2N7236 |
Microsemi Corporation |
MOSFET P-CH 100V 18A TO254AA |
유품4970 pcs |
|
|
- |
100 V |
18A (Tc) |
200mOhm @ 11A, 10V |
4V @ 250µA |
60 nC @ 10 V |
- |
10V |
±20V |
P-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-254-3, TO-254AA (Straight Leads) |
TO-254AA |
4W (Ta), 125W (Tc) |
|
|
|
NTTFS4C02NTAG |
onsemi |
MOSFET N-CH 30V 170A 8WDFN |
유품42500 pcs |
|
|
- |
30 V |
170A (Tc) |
2.25mOhm @ 20A, 10V |
2.2V @ 250µA |
20 nC @ 4.5 V |
2980 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTTFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WDFN (3.3x3.3) |
91W (Tc) |
|
|
|
NVMFS6B14NLT1G |
onsemi |
MOSFET N-CH 100V 11A/55A 5DFN |
유품4780 pcs |
|
|
- |
100 V |
11A (Ta), 55A (Tc) |
13mOhm @ 20A, 10V |
3V @ 250µA |
8 nC @ 4.5 V |
1680 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
NVMFS6 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.8W (Ta), 94W (Tc) |
|
|
|
DMN2027UPS-13 |
Diodes Incorporated |
MOSFET N-CH 20V 10A PWRDI5060 |
유품150100 pcs |
|
|
- |
20 V |
10A (Ta), 36A (Tc) |
12.5mOhm @ 9.4A, 4.5V |
1.3V @ 250µA |
11.6 nC @ 4.5 V |
1091 pF @ 10 V |
2.5V, 4.5V |
±12V |
N-Channel |
DMN2027 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PowerDI5060-8 |
1.1W (Ta) |
|
|
|
TSM4NC50CP |
Taiwan Semiconductor Corporation |
500V, 4A, SINGLE N-CHANNEL POWER |
유품51390 pcs |
|
|
- |
500 V |
4A (Tc) |
2.7Ohm @ 1.7A, 10V |
3V @ 250µA |
12 nC @ 10 V |
453 pF @ 50 V |
10V |
±20V |
N-Channel |
TSM4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
83W (Tc) |
|