|
|
FDP2532 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 8 |
유품5480 pcs |
|
|
- |
150 V |
8A (Ta), 79A (Tc) |
16mOhm @ 33A, 10V |
4V @ 250µA |
107 nC @ 10 V |
5870 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
FDP25 |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
310W (Tc) |
|
|
|
SIA443DJ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 9A PPAK SC70-6 |
유품5220 pcs |
|
|
- |
20 V |
9A (Tc) |
45mOhm @ 4.7A, 4.5V |
1V @ 250µA |
25 nC @ 8 V |
750 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
SIA443 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-70-6 |
PowerPAK® SC-70-6 |
3.3W (Ta), 15W (Tc) |
|
|
|
FCH25N60N |
onsemi |
MOSFET N-CH 600V 25A TO247-3 |
유품3970 pcs |
|
|
- |
600 V |
25A (Tc) |
126mOhm @ 12.5A, 10V |
4V @ 250µA |
74 nC @ 10 V |
3352 pF @ 100 V |
10V |
±30V |
N-Channel |
FCH25N60 |
Tube |
SupreMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
216W (Tc) |
|
|
|
BSP297L6327 |
Infineon Technologies |
SMALL-SIGNAL N-CHANNEL MOSFET |
유품4770 pcs |
|
|
- |
200 V |
660mA (Ta) |
1.8Ohm @ 660mA, 10V |
1.8V @ 400µA |
16.1 nC @ 10 V |
357 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
SIPMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
PG-SOT223-4-21 |
1.8W (Ta) |
|
|
|
FQA28N50 |
Fairchild Semiconductor |
28.4A, 500V, 0.16OHM, N-CHANNEL |
유품4610 pcs |
|
|
- |
500 V |
28.4A (Tc) |
160mOhm @ 14.2A, 10V |
5V @ 250µA |
140 nC @ 10 V |
5600 pF @ 25 V |
10V |
±30V |
N-Channel |
FQA2 |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 |
TO-3P |
310W (Tc) |
|
|
|
DMTH8008LPS-13 |
Diodes Incorporated |
MOSFET N-CH 80V 91A PWRDI5060-8 |
유품104670 pcs |
|
|
- |
80 V |
91A (Tc) |
7.8mOhm @ 14A, 10V |
2.8V @ 1mA |
41.2 nC @ 10 V |
2345 pF @ 40 V |
4.5V, 10V |
±20V |
N-Channel |
DMTH8008 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN |
PowerDI5060-8 |
1.5W (Ta), 100W (Tc) |
|
|
|
SSM6P16FE(TE85L,F) |
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A ES6 |
유품5370 pcs |
|
|
- |
20 V |
100mA (Ta) |
8Ohm @ 10mA, 4V |
- |
- |
11 pF @ 3 V |
- |
- |
P-Channel |
SSM6P16 |
Cut Tape (CT) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SOT-563, SOT-666 |
ES6 |
150mW (Ta) |
|
|
|
PMR280UN,115 |
NXP USA Inc. |
MOSFET N-CH 20V 980MA SC75 |
유품5180 pcs |
|
|
- |
20 V |
980mA (Tc) |
340mOhm @ 200mA, 4.5V |
1V @ 250µA |
0.89 nC @ 4.5 V |
45 pF @ 20 V |
1.8V, 4.5V |
±8V |
N-Channel |
PMR2 |
Tape & Reel (TR) |
TrenchMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-75, SOT-416 |
SC-75 |
530mW (Tc) |
|
|
|
TSM80N950CP |
Taiwan Semiconductor Corporation |
800V, 6A, SINGLE N-CHANNEL POWER |
유품14479 pcs |
|
|
- |
800 V |
6A (Tc) |
950mOhm @ 3A, 10V |
4V @ 250µA |
19.6 nC @ 10 V |
691 pF @ 100 V |
10V |
±30V |
N-Channel |
TSM80 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
110W (Tc) |
|
|
|
STH270N8F7-2 |
STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK |
유품8608 pcs |
|
|
- |
80 V |
180A (Tc) |
2.1mOhm @ 90A, 10V |
4V @ 250µA |
193 nC @ 10 V |
13600 pF @ 50 V |
10V |
±20V |
N-Channel |
STH270 |
Tape & Reel (TR) |
DeepGATE™, STripFET™ VII |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab) Variant |
H²PAK |
315W (Tc) |
|
|
|
FCH072N60F-F085 |
onsemi |
MOSFET N-CH 600V 52A TO247-3 |
유품4010 pcs |
|
|
- |
600 V |
52A (Tc) |
72mOhm @ 26A, 10V |
5V @ 250µA |
210 nC @ 10 V |
6330 pF @ 100 V |
10V |
±20V |
N-Channel |
FCH072 |
Tube |
Automotive, AEC-Q101, SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
481W (Tc) |
|
|
|
IRFR9220 |
Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
유품4040 pcs |
|
|
- |
200 V |
3.6A (Tc) |
1.5Ohm @ 2.2A, 10V |
4V @ 250µA |
20 nC @ 10 V |
340 pF @ 25 V |
10V |
±20V |
P-Channel |
IRFR9220 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
|
|
|
SI3441DV |
Fairchild Semiconductor |
P-CHANNEL MOSFET |
유품5490 pcs |
|
|
- |
20 V |
3.5A (Ta) |
80mOhm @ 3.5A, 4.5V |
1.5V @ 250µA |
10 nC @ 4.5 V |
779 pF @ 10 V |
2.5V, 4.5V |
±8V |
P-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-23-6 Thin, TSOT-23-6 |
SuperSOT™-6 |
800mW (Ta) |
|
|
|
SPP02N60S5 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품95220 pcs |
|
|
- |
600 V |
1.8A (Tc) |
3Ohm @ 1.1A, 10V |
5.5V @ 80µA |
9.5 nC @ 10 V |
240 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
25W (Tc) |
|
|
|
FCH041N65F-F155 |
onsemi |
MOSFET N-CH 650V 76A TO247 |
유품4950 pcs |
|
|
- |
650 V |
76A (Tc) |
41mOhm @ 38A, 10V |
5V @ 7.6mA |
294 nC @ 10 V |
13020 pF @ 100 V |
10V |
±20V |
N-Channel |
FCH041 |
Tube |
FRFET®, SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
595W (Tc) |
|
|
|
HUFA75307D3ST |
Fairchild Semiconductor |
MOSFET N-CH 55V 15A TO252AA |
유품126130 pcs |
|
|
- |
55 V |
15A (Tc) |
90mOhm @ 15A, 10V |
4V @ 250µA |
20 nC @ 20 V |
250 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
45W (Tc) |
|
|
|
DMT10H014LSS-13 |
Diodes Incorporated |
MOSFET N-CH 100V 8.9A 8SO |
유품71740 pcs |
|
|
- |
100 V |
8.9A (Ta) |
15mOhm @ 20A, 10V |
3V @ 250µA |
33.3 nC @ 10 V |
1871 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
DMT10 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
1.2W (Ta) |
|
|
|
IXFN132N50P3 |
IXYS |
MOSFET N-CH 500V 112A SOT227B |
유품1037 pcs |
|
|
- |
500 V |
112A (Tc) |
39mOhm @ 66A, 10V |
5V @ 8mA |
250 nC @ 10 V |
18600 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFN132 |
Tube |
HiPerFET™, Polar3™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
1500W (Tc) |
|
|
|
SI7462DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 200V 2.6A PPAK SO-8 |
유품3830 pcs |
|
|
- |
200 V |
2.6A (Ta) |
130mOhm @ 4.1A, 10V |
4V @ 250µA |
30 nC @ 10 V |
- |
- |
- |
N-Channel |
SI7462 |
Cut Tape (CT) |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
- |
|
|
|
BSZ12DN20NS3G |
Infineon Technologies |
BSZ12DN20 - 12V-300V N-CHANNEL P |
유품4700 pcs |
|
|
- |
200 V |
11.3A (Tc) |
125mOhm @ 5.7A, 10V |
4V @ 25µA |
8.7 nC @ 10 V |
680 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TSDSON-8 |
50W (Tc) |
|
|
|
NTMFS4849NT1G |
onsemi |
MOSFET N-CH 30V 10.2A/71A 5DFN |
유품4170 pcs |
|
|
- |
30 V |
10.2A (Ta), 71A (Tc) |
5.1mOhm @ 30A, 10V |
2.5V @ 250µA |
22 nC @ 4.5 V |
2040 pF @ 12 V |
4.5V, 11.5V |
±16V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
870mW (Ta), 42.4W (Tc) |
|
|
|
RU1C001ZPTL |
Rohm Semiconductor |
MOSFET P-CH 20V 100MA UMT3F |
유품827150 pcs |
|
|
- |
20 V |
100mA (Ta) |
3.8Ohm @ 100mA, 4.5V |
1V @ 100µA |
- |
15 pF @ 10 V |
1.2V, 4.5V |
±10V |
P-Channel |
RU1C001 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SC-85 |
UMT3F |
150mW (Ta) |
|
|
|
FQP24N08 |
Fairchild Semiconductor |
MOSFET N-CH 80V 24A TO220-3 |
유품5250 pcs |
|
|
- |
80 V |
24A (Tc) |
60mOhm @ 12A, 10V |
4V @ 250µA |
25 nC @ 10 V |
750 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
75W (Tc) |
|
|
|
IRF6635TRPBF |
Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
유품3790 pcs |
|
|
- |
30 V |
32A (Ta), 180A (Tc) |
1.8mOhm @ 32A, 10V |
2.35V @ 250µA |
71 nC @ 4.5 V |
5970 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 89W (Tc) |
|
|
|
SIHP30N60E-GE3 |
Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB |
유품15640 pcs |
|
|
- |
600 V |
29A (Tc) |
125mOhm @ 15A, 10V |
4V @ 250µA |
130 nC @ 10 V |
2600 pF @ 100 V |
10V |
±30V |
N-Channel |
SIHP30 |
Tube |
E |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
- |
250W (Tc) |
|
|
|
FDB7030BL |
Fairchild Semiconductor |
60A, 30V, 0.009OHM, N-CHANNEL, |
유품78000 pcs |
|
|
- |
30 V |
60A (Ta) |
9mOhm @ 30A, 10V |
3V @ 250µA |
24 nC @ 5 V |
1760 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
FDB703 |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-65°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263AB |
60W (Tc) |
|
|
|
FDT86113LZ |
onsemi |
MOSFET N-CH 100V 3.3A SOT223-4 |
유품90350 pcs |
|
|
- |
100 V |
3.3A (Tc) |
100mOhm @ 3.3A, 10V |
2.5V @ 250µA |
6.8 nC @ 10 V |
315 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
FDT86113 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223-4 |
2.2W (Ta) |
|
|
|
TSM4459CS RLG |
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 17A 8SOP |
유품4090 pcs |
|
|
- |
30 V |
17A (Ta) |
5.2mOhm @ 9A, 10V |
3V @ 250µA |
78.4 nC @ 4.5 V |
6205 pF @ 15 V |
4.5V, 10V |
±20V |
P-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOP |
2.5W (Ta) |
|
|
|
IRFSL4310ZPBF |
International Rectifier |
IRFSL4310 - HEXFET POWER MOSFET |
유품5220 pcs |
|
|
- |
100 V |
120A (Tc) |
6mOhm @ 75A, 10V |
4V @ 150µA |
170 nC @ 10 V |
6860 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
250W (Tc) |
|
|
|
FDD8451 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 9 |
유품85820 pcs |
|
|
- |
40 V |
9A (Ta), 28A (Tc) |
24mOhm @ 9A, 10V |
3V @ 250µA |
20 nC @ 10 V |
990 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
30W (Tc) |
|
|
|
DMN1019UVT-7 |
Diodes Incorporated |
MOSFET N-CH 12V 10.7A TSOT26 |
유품253210 pcs |
|
|
- |
12 V |
10.7A (Ta) |
10mOhm @ 9.7A, 4.5V |
800mV @ 250µA |
50.4 nC @ 8 V |
2588 pF @ 10 V |
1.2V, 4.5V |
±8V |
N-Channel |
DMN1019 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-23-6 Thin, TSOT-23-6 |
TSOT-26 |
1.73W (Ta) |
|
|
|
AUIRFP064N |
International Rectifier |
AUIRFP064 - 55V-60V N-CHANNEL AU |
유품13484 pcs |
|
|
- |
55 V |
110A (Tc) |
8mOhm @ 59A, 10V |
4V @ 250µA |
170 nC @ 10 V |
4000 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AC |
200W (Tc) |
|
|
|
STL210N4F7AG |
STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
유품39023 pcs |
|
|
- |
40 V |
120A (Tc) |
1.6mOhm @ 16A, 10V |
4V @ 250µA |
43 nC @ 10 V |
3600 pF @ 25 V |
10V |
±20V |
N-Channel |
STL210 |
Tape & Reel (TR) |
Automotive, AEC-Q101, STripFET™ F7 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (5x6) |
150W (Tc) |
|
|
|
FDS8882 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 9 |
유품82500 pcs |
|
|
- |
30 V |
9A (Ta) |
20mOhm @ 9A, 10V |
3V @ 250µA |
20 nC @ 10 V |
940 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
RJK03K0DPA-00#J5A |
Renesas Electronics America Inc |
N-CHANNEL POWER SWITCHING MOSFET |
유품34790 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IRFH8337TR2PBF |
Infineon Technologies |
MOSFET N-CH 30V 9.7A 5X6 PQFN |
유품4860 pcs |
|
|
- |
30 V |
12A (Ta), 35A (Tc) |
12.8mOhm @ 16.2A, 10V |
2.35V @ 25µA |
10 nC @ 10 V |
790 pF @ 10 V |
- |
- |
N-Channel |
- |
Cut Tape (CT) |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
8-PowerTDFN |
PQFN (5x6) |
- |
|
|
|
RDN120N25 |
Rohm Semiconductor |
MOSFET N-CH 250V 12A TO220FN |
유품3780 pcs |
|
|
- |
250 V |
12A (Ta) |
210mOhm @ 6A, 10V |
4V @ 1mA |
62 nC @ 10 V |
1224 pF @ 10 V |
10V |
±30V |
N-Channel |
RDN120 |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220FN |
40W (Tc) |
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|
CSD18543Q3A |
Texas Instruments |
MOSFET N-CH 60V 60A 8VSON |
유품118320 pcs |
|
|
Standard |
60 V |
60A (Tc) |
9.9mOhm @ 12A, 10V |
2.7V @ 250µA |
14.5 nC @ 10 V |
1150 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
CSD18543 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-VSONP (3x3.15) |
66W (Tc) |
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|
SIS438DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 16A PPAK 1212-8 |
유품78910 pcs |
|
|
- |
20 V |
16A (Tc) |
9.5mOhm @ 10A, 10V |
2.3V @ 250µA |
23 nC @ 10 V |
880 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
SIS438 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
3.5W (Ta), 27.7W (Tc) |
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|
|
AOT2146L |
Alpha & Omega Semiconductor Inc. |
N |
유품41960 pcs |
|
|
- |
40 V |
42A (Ta), 105A (Tc) |
2.8mOhm @ 20A, 10V |
2.5V @ 250µA |
70 nC @ 10 V |
3830 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
AOT2146 |
Tape & Reel (TR) |
AlphaSGT™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
8.3W (Ta), 119W (Tc) |
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|
RJK0380DPA-00#J53 |
Renesas Electronics America Inc |
POWER TRANSISTOR, MOSFET |
유품24109 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IRFH5303TR2PBF |
Infineon Technologies |
MOSFET N-CH 30V 23A/82A 8PQFN |
유품4450 pcs |
|
|
- |
30 V |
23A (Ta), 82A (Tc) |
4.2mOhm @ 49A, 10V |
2.35V @ 50µA |
41 nC @ 10 V |
2190 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-PQFN (5x6) |
3.6W (Ta), 46W (Tc) |
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|
|
FDMC2610 |
onsemi |
MOSFET N-CH 200V 2.2A/9.5A 8MLP |
유품35410 pcs |
|
|
- |
200 V |
2.2A (Ta), 9.5A (Tc) |
200mOhm @ 2.2A, 10V |
4V @ 250µA |
18 nC @ 10 V |
960 pF @ 100 V |
6V, 10V |
±20V |
N-Channel |
FDMC26 |
Tape & Reel (TR) |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-MLP (3.3x3.3) |
2.1W (Ta), 42W (Tc) |
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|
SI7456DP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 100V 5.7A PPAK SO-8 |
유품34806 pcs |
|
|
- |
100 V |
5.7A (Ta) |
25mOhm @ 9.3A, 10V |
4V @ 250µA |
44 nC @ 10 V |
- |
6V, 10V |
±20V |
N-Channel |
SI7456 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
1.9W (Ta) |
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|
|
APT22F120B2 |
Microchip Technology |
MOSFET N-CH 1200V 23A T-MAX |
유품931 pcs |
|
|
- |
1200 V |
23A (Tc) |
700mOhm @ 12A, 10V |
5V @ 2.5mA |
260 nC @ 10 V |
8370 pF @ 25 V |
10V |
±30V |
N-Channel |
APT22F120 |
Tube |
POWER MOS 8™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 Variant |
T-MAX™ [B2] |
1040W (Tc) |
|
|
|
SIS778DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
유품4130 pcs |
|
|
Schottky Diode (Body) |
30 V |
35A (Tc) |
5mOhm @ 10A, 10V |
2.2V @ 250µA |
42.5 nC @ 10 V |
1390 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SIS778 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-50°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
52W (Tc) |
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|
|
FQP5N50C |
Fairchild Semiconductor |
MOSFET N-CH 500V 5A TO220-3 |
유품81650 pcs |
|
|
- |
500 V |
5A (Tc) |
1.4Ohm @ 2.5A, 10V |
4V @ 250µA |
24 nC @ 10 V |
625 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
73W (Tc) |
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|
|
BSZ050N03LSG |
Infineon Technologies |
BSZ050N03 - 12V-300V N-CHANNEL P |
유품4160 pcs |
|
|
- |
30 V |
16A (Ta), 80A (Tc) |
5mOhm @ 20A, 10V |
2.2V @ 250µA |
35 nC @ 10 V |
2800 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TSDSON-8 |
2.1W (Ta), 50W (Tc) |
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|
|
IRFR020 |
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
유품3630 pcs |
|
|
- |
60 V |
14A (Tc) |
100mOhm @ 8.4A, 10V |
4V @ 250µA |
25 nC @ 10 V |
640 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR020 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
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|
|
NTD4906N-35G |
onsemi |
MOSFET N-CH 30V 10.3A/54A IPAK |
유품4650 pcs |
|
|
- |
30 V |
10.3A (Ta), 54A (Tc) |
5.5mOhm @ 30A, 10V |
2.2V @ 250µA |
24 nC @ 10 V |
1932 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTD49 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Stub Leads, IPak |
I-Pak |
1.38W (Ta), 37.5W (Tc) |
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