|
|
IPD040N03LG |
Infineon Technologies |
OPTLMOS N-CHANNEL POWER MOSFET |
유품4270 pcs |
|
|
- |
30 V |
90A (Tc) |
4mOhm @ 30A, 10V |
2.2V @ 250µA |
38 nC @ 10 V |
3900 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS® 3 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-11 |
79W (Tc) |
|
|
|
UPA2723UT1A-E1-AY |
Renesas Electronics America Inc |
MOSFET N-CH 30V 33A 8DFN |
유품23163 pcs |
|
|
- |
30 V |
33A (Ta) |
2.5mOhm @ 17A, 10V |
2.5V @ 1mA |
64 nC @ 5 V |
8100 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
8-VDFN Exposed Pad |
8-DFN3333 (3.3x3.3) |
- |
|
|
|
NDF10N62ZG |
onsemi |
MOSFET N-CH 620V 10A TO220FP |
유품4890 pcs |
|
|
- |
620 V |
10A (Tc) |
750mOhm @ 5A, 10V |
4.5V @ 100µA |
47 nC @ 10 V |
1425 pF @ 25 V |
10V |
±30V |
N-Channel |
NDF10 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220FP |
36W (Tc) |
|
|
|
DMT6010LPS-13 |
Diodes Incorporated |
MOSFET N-CH 60V 13.5A PWRDI5060 |
유품71090 pcs |
|
|
- |
60 V |
13.5A (Ta), 80A (Tc) |
8mOhm @ 20A, 10V |
3V @ 250µA |
41.3 nC @ 10 V |
2090 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
DMT6010 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PowerDI5060-8 |
2.2W (Ta), 113W (Tc) |
|
|
|
HUF75645S3S |
Fairchild Semiconductor |
MOSFET N-CH 100V 75A D2PAK |
유품42630 pcs |
|
|
- |
100 V |
75A (Tc) |
14mOhm @ 75A, 10V |
4V @ 250µA |
238 nC @ 20 V |
3790 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
310W (Tc) |
|
|
|
CSD22205LT |
Texas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
유품62740 pcs |
|
|
- |
8 V |
7.4A (Ta) |
9.9mOhm @ 1A, 4.5V |
1.05V @ 250µA |
8.5 nC @ 4.5 V |
1390 pF @ 4 V |
1.5V, 4.5V |
-6V |
P-Channel |
CSD22205 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
4-XFLGA |
4-PICOSTAR |
600mW (Ta) |
|
|
|
SI7192DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
유품18910 pcs |
|
|
- |
30 V |
60A (Tc) |
1.9mOhm @ 20A, 10V |
2.5V @ 250µA |
135 nC @ 10 V |
5800 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SI7192 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
6.25W (Ta), 104W (Tc) |
|
|
|
IRFR9120PBF |
Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
유품75810 pcs |
|
|
- |
100 V |
5.6A (Tc) |
600mOhm @ 3.4A, 10V |
4V @ 250µA |
18 nC @ 10 V |
390 pF @ 25 V |
10V |
±20V |
P-Channel |
IRFR9120 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
|
|
|
IRFU3711 |
Infineon Technologies |
MOSFET N-CH 20V 100A IPAK |
유품4810 pcs |
|
|
- |
20 V |
100A (Tc) |
6.5mOhm @ 15A, 10V |
3V @ 250µA |
44 nC @ 4.5 V |
2980 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
IPAK (TO-251AA) |
2.5W (Ta), 120W (Tc) |
|
|
|
BSL202SNL6327 |
Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET |
유품4590 pcs |
|
|
- |
20 V |
7.5A (Ta) |
22mOhm @ 7.5A, 4.5V |
1.2V @ 30µA |
8.7 nC @ 4.5 V |
1147 pF @ 10 V |
2.5V, 4.5V |
±12V |
N-Channel |
- |
Bulk |
OptiMOS™2 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-23-6 Thin, TSOT-23-6 |
PG-TSOP6-6-6 |
2W (Ta) |
|
|
|
DMN1017UCP3-7 |
Diodes Incorporated |
MOSFET N-CH 12V 7.5A X3DSN1010-3 |
유품265640 pcs |
|
|
- |
12 V |
7.5A (Ta) |
17mOhm @ 5A, 3.3V |
1V @ 250µA |
16 nC @ 3.3 V |
1503 pF @ 6 V |
1.8V, 3.3V |
±8V |
N-Channel |
DMN1017 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-XDFN |
X3-DSN1010-3 |
1.47W |
|
|
|
HUF76423P3 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품5280 pcs |
|
|
- |
60 V |
35A (Tc) |
30mOhm @ 35A, 10V |
3V @ 250µA |
34 nC @ 10 V |
1060 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
85W (Tc) |
|
|
|
2SJ208-T1-AZ |
Renesas Electronics America Inc |
P-CHANNEL POWER MOSFET |
유품4570 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FQU11P06TU |
onsemi |
MOSFET P-CH 60V 9.4A IPAK |
유품4130 pcs |
|
|
- |
60 V |
9.4A (Tc) |
185mOhm @ 4.7A, 10V |
4V @ 250µA |
17 nC @ 10 V |
550 pF @ 25 V |
10V |
±30V |
P-Channel |
FQU11P06 |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
2.5W (Ta), 38W (Tc) |
|
|
|
HUF76013D3ST |
Fairchild Semiconductor |
MOSFET N-CH 20V 20A TO252AA |
유품127630 pcs |
|
|
- |
20 V |
20A (Tc) |
22mOhm @ 20A, 10V |
3V @ 250µA |
17 nC @ 10 V |
624 pF @ 20 V |
5V, 10V |
±20V |
N-Channel |
- |
Bulk |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
50W (Tc) |
|
|
|
IRFSL7762PBF |
Infineon Technologies |
MOSFET N-CH 75V 85A TO262 |
유품37229 pcs |
|
|
- |
75 V |
85A (Tc) |
6.7mOhm @ 51A, 10V |
3.7V @ 100µA |
130 nC @ 10 V |
4440 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
- |
Tube |
HEXFET®, StrongIRFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
140W (Tc) |
|
|
|
FDMC610P |
onsemi |
MOSFET P-CH 12V 80A POWER33 |
유품42621 pcs |
|
|
- |
12 V |
80A (Tc) |
3.9mOhm @ 22A, 4.5V |
1V @ 250µA |
99 nC @ 4.5 V |
1250 pF @ 6 V |
2.5V, 4.5V |
±8V |
P-Channel |
FDMC610 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
Power33 |
2.4W (Ta), 48W (Tc) |
|
|
|
TSM80N1R2CH |
Taiwan Semiconductor Corporation |
800V, 5.5A, SINGLE N-CHANNEL POW |
유품11466 pcs |
|
|
- |
800 V |
5.5A (Tc) |
1.2Ohm @ 2.75A, 10V |
4V @ 250µA |
19.4 nC @ 10 V |
685 pF @ 100 V |
10V |
±30V |
N-Channel |
TSM80 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
TO-251 (IPAK) |
110W (Tc) |
|
|
|
BSC072N08NS5ATMA1 |
Infineon Technologies |
MOSFET N-CH 80V 74A TDSON |
유품35040 pcs |
|
|
- |
80 V |
74A (Tc) |
7.2mOhm @ 37A, 10V |
3.8V @ 36µA |
29 nC @ 10 V |
2100 pF @ 40 V |
6V, 10V |
±20V |
N-Channel |
BSC072 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-7 |
2.5W (Ta), 69W (Tc) |
|
|
|
FDMS7650DC |
onsemi |
MOSFET N-CH 30V 47A POWER56 |
유품11984 pcs |
|
|
- |
30 V |
47A (Ta), 100A (Tc) |
0.99mOhm @ 36A, 10V |
2.7V @ 250µA |
206 nC @ 10 V |
14765 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
FDMS7650 |
Tape & Reel (TR) |
Dual Cool™, PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
3.3W (Ta), 125W (Tc) |
|
|
|
NTMFS4C06NBT1G |
onsemi |
MOSFET N-CH 30V 20A/69A 5DFN |
유품47650 pcs |
|
|
- |
30 V |
20A (Ta), 69A (Tc) |
4mOhm @ 30A, 10V |
2.1V @ 250µA |
26 nC @ 10 V |
1683 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
2.55W (Ta), 30.5W (Tc) |
|
|
|
BSC050N03LSGATMA1 |
Infineon Technologies |
MOSFET N-CH 30V 18A/80A TDSON |
유품96810 pcs |
|
|
- |
30 V |
18A (Ta), 80A (Tc) |
5mOhm @ 30A, 10V |
2.2V @ 250µA |
35 nC @ 10 V |
2800 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
BSC050 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-5 |
2.5W (Ta), 50W (Tc) |
|
|
|
SI1426DH-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 2.8A SC70-6 |
유품5000 pcs |
|
|
- |
30 V |
2.8A (Ta) |
75mOhm @ 3.6A, 10V |
2.5V @ 250µA |
3 nC @ 4.5 V |
- |
4.5V, 10V |
±20V |
N-Channel |
SI1426 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-TSSOP, SC-88, SOT-363 |
SC-70-6 |
1W (Ta) |
|
|
|
IRFBC30ASPBF |
Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
유품31720 pcs |
|
|
- |
600 V |
3.6A (Tc) |
2.2Ohm @ 2.2A, 10V |
4.5V @ 250µA |
23 nC @ 10 V |
510 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFBC30 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
74W (Tc) |
|
|
|
FQPF7N60 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 4 |
유품5490 pcs |
|
|
- |
600 V |
4.3A (Tc) |
1Ohm @ 2.2A, 10V |
5V @ 250µA |
38 nC @ 10 V |
1430 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
48W (Tc) |
|
|
|
AON6144 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 100A 8DFN |
유품39730 pcs |
|
|
- |
40 V |
100A (Tc) |
2.4mOhm @ 20A, 10V |
2.4V @ 250µA |
70 nC @ 10 V |
3780 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
AON61 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerSMD, Flat Leads |
8-DFN (5x6) |
78W (Tc) |
|
|
|
IPA50R280CEXKSA2 |
Infineon Technologies |
MOSFET N-CH 500V 7.5A TO220 |
유품69500 pcs |
|
|
- |
500 V |
7.5A (Tc) |
280mOhm @ 4.2A, 13V |
3.5V @ 350µA |
32.6 nC @ 10 V |
773 pF @ 100 V |
13V |
±20V |
N-Channel |
IPA50R280 |
Tube |
CoolMOS™ CE |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-FP |
30.4W (Tc) |
|
|
|
IXFH320N10T2 |
IXYS |
MOSFET N-CH 100V 320A TO247AD |
유품2603 pcs |
|
|
- |
100 V |
320A (Tc) |
3.5mOhm @ 100A, 10V |
4V @ 250µA |
430 nC @ 10 V |
26000 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH320 |
Tube |
HiPerFET™, TrenchT2™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
1000W (Tc) |
|
|
|
RTR030P02HZGTL |
Rohm Semiconductor |
MOSFET P-CH 20V 3A TSMT3 |
유품85670 pcs |
|
|
- |
20 V |
3A (Ta) |
75mOhm @ 3A, 4.5V |
2V @ 34µA |
9.3 nC @ 4.5 V |
840 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
RTR030 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SC-96 |
TSMT3 |
700mW (Ta) |
|
|
|
CSD25483F4T |
Texas Instruments |
MOSFET P-CH 20V 1.6A 3PICOSTAR |
유품71240 pcs |
|
|
- |
20 V |
1.6A (Ta) |
205mOhm @ 500mA, 8V |
1.2V @ 250µA |
0.96 nC @ 4.5 V |
198 pF @ 10 V |
1.8V, 4.5V |
-12V |
P-Channel |
CSD25483 |
Tape & Reel (TR) |
FemtoFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-XFDFN |
3-PICOSTAR |
500mW (Ta) |
|
|
|
IRF7204TRPBF |
International Rectifier |
IRF7204 - 20V-250V P-CHANNEL POW |
유품5150 pcs |
|
|
- |
20 V |
5.3A (Ta) |
60mOhm @ 5.3A, 10V |
2.5V @ 250µA |
25 nC @ 10 V |
860 pF @ 10 V |
4.5V, 10V |
±12V |
P-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
2.5W (Tc) |
|
|
|
IRFSL3207 |
Infineon Technologies |
MOSFET N-CH 75V 180A TO262 |
유품5400 pcs |
|
|
- |
75 V |
180A (Tc) |
4.5mOhm @ 75A, 10V |
4V @ 250µA |
260 nC @ 10 V |
7600 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
330W (Tc) |
|
|
|
HUF75329G3 |
onsemi |
MOSFET N-CH 55V 49A TO247-3 |
유품5260 pcs |
|
|
- |
55 V |
49A (Tc) |
24mOhm @ 49A, 10V |
4V @ 250µA |
75 nC @ 20 V |
1060 pF @ 25 V |
10V |
±20V |
N-Channel |
HUF75 |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
128W (Tc) |
|
|
|
FDU8796 |
Fairchild Semiconductor |
MOSFET N-CH 25V 35A IPAK |
유품94710 pcs |
|
|
- |
25 V |
35A (Tc) |
5.7mOhm @ 35A, 10V |
2.5V @ 250µA |
52 nC @ 10 V |
2610 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
88W (Tc) |
|
|
|
FDU3N40TU |
onsemi |
MOSFET N-CH 400V 2A IPAK |
유품141040 pcs |
|
|
- |
400 V |
2A (Tc) |
3.4Ohm @ 1A, 10V |
5V @ 250µA |
6 nC @ 10 V |
225 pF @ 25 V |
10V |
±30V |
N-Channel |
FDU3 |
Tube |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
30W (Tc) |
|
|
|
SIR106DP-T1-RE3 |
Vishay Siliconix |
MOSFET N-CH 100V 16.1A PPAK |
유품43990 pcs |
|
|
- |
100 V |
16.1A (Ta), 65.8A (Tc) |
8mOhm @ 15A, 10V |
3.4V @ 250µA |
64 nC @ 10 V |
3610 pF @ 50 V |
7.5V, 10V |
±20V |
N-Channel |
SIR106 |
Tape & Reel (TR) |
TrenchFET® Gen IV |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
3.2W (Ta), 83.3W (Tc) |
|
|
|
IRF9610STRRPBF |
Vishay Siliconix |
N-CHANNEL200V |
유품78670 pcs |
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- |
200 V |
1.8A (Tc) |
3Ohm @ 900mA, 10V |
4V @ 250µA |
11 nC @ 10 V |
170 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9610 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3W (Ta), 20W (Tc) |
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NTMFS5C670NLT1G |
onsemi |
MOSFET N-CH 60V 17A/71A 5DFN |
유품33254 pcs |
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- |
60 V |
17A (Ta), 71A (Tc) |
6.1mOhm @ 35A, 10V |
2V @ 250µA |
20 nC @ 10 V |
1400 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS5 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.6W (Ta), 61W (Tc) |
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FQU5N40TU |
onsemi |
MOSFET N-CH 400V 3.4A IPAK |
유품38955 pcs |
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- |
400 V |
3.4A (Tc) |
1.6Ohm @ 1.7A, 10V |
5V @ 250µA |
13 nC @ 10 V |
460 pF @ 25 V |
10V |
±30V |
N-Channel |
FQU5N40 |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
2.5W (Ta), 45W (Tc) |
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IRF6215L-103PBF |
Infineon Technologies |
MOSFET P-CH 150V 13A TO262 |
유품5210 pcs |
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- |
150 V |
13A (Tc) |
290mOhm @ 6.6A, 10V |
4V @ 250µA |
66 nC @ 10 V |
860 pF @ 25 V |
10V |
±20V |
P-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
3.8W (Ta), 110W (Tc) |
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RFD14N05 |
Fairchild Semiconductor |
MOSFET N-CH 50V 14A IPAK |
유품3960 pcs |
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- |
50 V |
14A (Tc) |
100mOhm @ 14A, 10V |
4V @ 250µA |
40 nC @ 20 V |
570 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
48W (Tc) |
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IRFS59N10DPBF |
International Rectifier |
SMPS HEXFET POWER MOSFET |
유품5300 pcs |
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- |
100 V |
59A (Tc) |
25mOhm @ 35.4A, 10V |
5.5V @ 250µA |
114 nC @ 10 V |
2450 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.8W (Ta), 200W (Tc) |
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AON7422G |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CHANNEL 30V 32A 8DFN |
유품143010 pcs |
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- |
30 V |
32A (Tc) |
4.6mOhm @ 20A, 10V |
2.4V @ 250µA |
60 nC @ 10 V |
2300 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
AON742 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-DFN-EP (3x3) |
28W (Tc) |
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SI7615DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
유품55790 pcs |
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- |
20 V |
35A (Tc) |
3.9mOhm @ 20A, 10V |
1.5V @ 250µA |
183 nC @ 10 V |
6000 pF @ 10 V |
6V, 10V |
±12V |
P-Channel |
SI7615 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
3.7W (Ta), 52W (Tc) |
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TPN4R303NL,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 8TSON |
유품114060 pcs |
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- |
30 V |
40A (Tc) |
4.3mOhm @ 20A, 10V |
2.3V @ 200µA |
14.8 nC @ 10 V |
1400 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
TPN4R303 |
Tape & Reel (TR) |
U-MOSVIII-H |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-TSON Advance (3.1x3.1) |
700mW (Ta), 34W (Tc) |
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FDB28N30TM |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 2 |
유품3730 pcs |
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- |
300 V |
28A (Tc) |
129mOhm @ 14A, 10V |
5V @ 250µA |
50 nC @ 10 V |
2250 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
250W (Tc) |
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2SK2624LS |
onsemi |
N-CHANNEL SILICON MOSFET |
유품70880 pcs |
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- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
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IRFR224TRPBF |
Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
유품56940 pcs |
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- |
250 V |
3.8A (Tc) |
1.1Ohm @ 2.3A, 10V |
4V @ 250µA |
14 nC @ 10 V |
260 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFR224 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
D-Pak |
2.5W (Ta), 42W (Tc) |
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FDJ127P |
onsemi |
MOSFET P-CH 20V 4.1A SC75-6 FLMP |
유품5020 pcs |
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- |
20 V |
4.1A (Ta) |
60mOhm @ 4.1A, 4.5V |
1.5V @ 250µA |
10 nC @ 4.5 V |
780 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
FDJ127 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-75-6 FLMP |
SC75-6 FLMP |
1.6W (Ta) |
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FQI47P06TU |
Fairchild Semiconductor |
MOSFET P-CH 60V 47A I2PAK |
유품18871 pcs |
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- |
60 V |
47A (Tc) |
26mOhm @ 23.5A, 10V |
4V @ 250µA |
110 nC @ 10 V |
3600 pF @ 25 V |
10V |
±25V |
P-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK (TO-262) |
3.75W (Ta), 160W (Tc) |
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