|
|
FQT5P10TF |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품3610 pcs |
|
|
- |
100 V |
1A (Tc) |
1.05Ohm @ 500mA, 10V |
4V @ 250µA |
8.2 nC @ 10 V |
250 pF @ 25 V |
10V |
±30V |
P-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223-4 |
2W (Tc) |
|
|
|
IPP062NE7N3G |
Infineon Technologies |
IPP062NE7 - 12V-300V N-CHANNEL P |
유품3920 pcs |
|
|
- |
75 V |
80A (Tc) |
6.2mOhm @ 73A, 10V |
3.8V @ 70µA |
55 nC @ 10 V |
3840 pF @ 37.5 V |
10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ 3 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
136W (Tc) |
|
|
|
IRF6620TR1PBF |
Infineon Technologies |
MOSFET N-CH 20V 27A DIRECTFET |
유품3720 pcs |
|
|
- |
20 V |
27A (Ta), 150A (Tc) |
2.7mOhm @ 27A, 10V |
2.45V @ 250µA |
42 nC @ 4.5 V |
4130 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 89W (Tc) |
|
|
|
IRFS31N20DPBF |
International Rectifier |
HEXFET N-CHANNEL POWER MOSFET |
유품4210 pcs |
|
|
- |
200 V |
31A (Tc) |
82mOhm @ 18A, 10V |
5.5V @ 250µA |
107 nC @ 10 V |
2370 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.1W (Ta), 200W (Tc) |
|
|
|
NDF02N60ZG |
Sanyo |
MOSFET N-CH 600V 2.4A TO220FP |
유품4570 pcs |
|
|
- |
600 V |
2.4A (Tc) |
4.8Ohm @ 1A, 10V |
4.5V @ 50µA |
10.1 nC @ 10 V |
274 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220FP |
24W (Tc) |
|
|
|
FQP3N90 |
Fairchild Semiconductor |
MOSFET N-CH 900V 3.6A TO220-3 |
유품51920 pcs |
|
|
- |
900 V |
3.6A (Tc) |
4.25Ohm @ 1.8A, 10V |
5V @ 250µA |
26 nC @ 10 V |
910 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
130W (Tc) |
|
|
|
FDP55N06 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 5 |
유품4820 pcs |
|
|
- |
60 V |
55A (Tc) |
22mOhm @ 27.5A, 10V |
4V @ 250µA |
37 nC @ 10 V |
1510 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Bulk |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
114W (Tc) |
|
|
|
CPH3427-TL-E |
onsemi |
MOSFET N-CH 100V 1A 3CPH |
유품255160 pcs |
|
|
- |
100 V |
1A (Ta) |
630mOhm @ 500mA, 10V |
- |
6.5 nC @ 10 V |
240 pF @ 20 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SC-96 |
3-CPH |
1W (Ta) |
|
|
|
FDS7764A |
Fairchild Semiconductor |
MOSFET N-CH 30V 15A 8SOIC |
유품32998 pcs |
|
|
- |
30 V |
15A (Ta) |
7.5mOhm @ 15A, 4.5V |
2V @ 250µA |
40 nC @ 4.5 V |
3451 pF @ 15 V |
- |
- |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
- |
|
|
|
RTF025N03TL |
Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TUMT3 |
유품98960 pcs |
|
|
- |
30 V |
2.5A (Ta) |
67mOhm @ 2.5A, 4.5V |
1.5V @ 1mA |
5.2 nC @ 4.5 V |
270 pF @ 10 V |
2.5V, 4.5V |
±12V |
N-Channel |
RTF025 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
3-SMD, Flat Leads |
TUMT3 |
800mW (Ta) |
|
|
|
IRF6638TRPBF |
Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET |
유품3640 pcs |
|
|
- |
30 V |
25A (Ta), 140A (Tc) |
2.9mOhm @ 25A, 10V |
2.35V @ 100µA |
45 nC @ 4.5 V |
3770 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 89W (Tc) |
|
|
|
IRFU15N20DPBF |
Infineon Technologies |
MOSFET N-CH 200V 17A IPAK |
유품4250 pcs |
|
|
- |
200 V |
17A (Tc) |
165mOhm @ 10A, 10V |
5.5V @ 250µA |
41 nC @ 10 V |
910 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
IPAK (TO-251AA) |
110W (Tc) |
|
|
|
IRF9Z34STRR |
Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK |
유품5370 pcs |
|
|
- |
60 V |
18A (Tc) |
140mOhm @ 11A, 10V |
4V @ 250µA |
34 nC @ 10 V |
1100 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.7W (Ta), 88W (Tc) |
|
|
|
FCPF360N65S3R0L |
onsemi |
MOSFET N-CH 650V 10A TO220F-3 |
유품5100 pcs |
|
|
- |
650 V |
10A (Tc) |
360mOhm @ 5A, 10V |
4.5V @ 1mA |
18 nC @ 10 V |
730 pF @ 400 V |
10V |
±30V |
N-Channel |
FCPF360 |
Tube |
SuperFET® III |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
27W (Tc) |
|
|
|
SUP65P04-15-E3 |
Vishay Siliconix |
MOSFET P-CH 40V 65A TO220AB |
유품5000 pcs |
|
|
- |
40 V |
65A (Tc) |
15mOhm @ 30A, 10V |
3V @ 250µA |
130 nC @ 10 V |
5400 pF @ 25 V |
4.5V, 10V |
±20V |
P-Channel |
SUP65 |
Bulk |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
3.75W (Ta), 120W (Tc) |
|
|
|
IXFN21N100Q |
IXYS |
MOSFET N-CH 1000V 21A SOT-227B |
유품4650 pcs |
|
|
- |
1000 V |
21A (Tc) |
500mOhm @ 500mA, 10V |
5V @ 4mA |
170 nC @ 10 V |
5900 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFN21 |
Tube |
HiPerFET™, Q Class |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
520W (Tc) |
|
|
|
IRFS7434-7PPBF |
International Rectifier |
MOSFET N-CH 40V 240A D2PAK |
유품3660 pcs |
|
|
- |
40 V |
240A (Tc) |
1mOhm @ 100A, 10V |
3.9V @ 250µA |
315 nC @ 10 V |
10250 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET®, StrongIRFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-7, D²Pak (6 Leads + Tab) |
D2PAK (7-Lead) |
245W (Tc) |
|
|
|
STL18N60M2 |
STMicroelectronics |
MOSFET N-CH 600V 9A POWERFLAT HV |
유품35482 pcs |
|
|
- |
600 V |
9A (Tc) |
308mOhm @ 4.5A, 10V |
4V @ 250µA |
21.5 nC @ 10 V |
791 pF @ 100 V |
10V |
±25V |
N-Channel |
STL18 |
Tape & Reel (TR) |
MDmesh™ II Plus |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (5x6) HV |
57W (Tc) |
|
|
|
IRL2203NL |
Infineon Technologies |
MOSFET N-CH 30V 116A TO262 |
유품4840 pcs |
|
|
- |
30 V |
116A (Tc) |
7mOhm @ 60A, 10V |
3V @ 250µA |
60 nC @ 4.5 V |
3290 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
3.8W (Ta), 180W (Tc) |
|
|
|
TK6A65W,S5X |
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO220SIS |
유품60940 pcs |
|
|
- |
650 V |
5.8A (Ta) |
1Ohm @ 2.9A, 10V |
3.5V @ 180µA |
11 nC @ 10 V |
390 pF @ 300 V |
10V |
±30V |
N-Channel |
TK6A65 |
Tube |
DTMOSIV |
MOSFET (Metal Oxide) |
150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220SIS |
30W (Tc) |
|
|
|
IXFH42N20 |
IXYS |
MOSFET N-CH 200V 42A TO247AD |
유품5010 pcs |
|
|
- |
200 V |
42A (Tc) |
60mOhm @ 500mA, 10V |
4V @ 4mA |
220 nC @ 10 V |
4400 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH42 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
300W (Tc) |
|
|
|
SPD04N60C2 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품97930 pcs |
|
|
- |
600 V |
4.5A (Tc) |
950mOhm @ 2.8A, 10V |
5.5V @ 200µA |
22.9 nC @ 10 V |
580 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-1 |
50W (Tc) |
|
|
|
C2M0045170D |
Wolfspeed, Inc. |
SICFET N-CH 1700V 72A TO247-3 |
유품442 pcs |
|
|
- |
1700 V |
72A (Tc) |
70mOhm @ 50A, 20V |
4V @ 18mA |
188 nC @ 20 V |
3672 pF @ 1000 V |
20V |
+25V, -10V |
N-Channel |
C2M0045170 |
Tube |
C2M™ |
SiCFET (Silicon Carbide) |
-40°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
520W (Tc) |
|
|
|
AOI514 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 17A/46A TO251A |
유품4110 pcs |
|
|
- |
30 V |
17A (Ta), 46A (Tc) |
5.9mOhm @ 20A, 10V |
2.4V @ 250µA |
18 nC @ 10 V |
1187 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
AOI51 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Stub Leads, IPak |
TO-251A |
2.5W (Ta), 50W (Tc) |
|
|
|
IRF540STRLPBF |
Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
유품29170 pcs |
|
|
- |
100 V |
28A (Tc) |
77mOhm @ 17A, 10V |
4V @ 250µA |
72 nC @ 10 V |
1700 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF540 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.7W (Ta), 150W (Tc) |
|
|
|
IRF630NLPBF |
Infineon Technologies |
MOSFET N-CH 200V 9.3A TO262 |
유품4950 pcs |
|
|
- |
200 V |
9.3A (Tc) |
300mOhm @ 5.4A, 10V |
4V @ 250µA |
35 nC @ 10 V |
575 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
82W (Tc) |
|
|
|
RFD8P05 |
onsemi |
MOSFET P-CH 50V 8A I-PAK |
유품4860 pcs |
|
|
- |
50 V |
8A (Tc) |
300mOhm @ 8A, 10V |
4V @ 250µA |
80 nC @ 20 V |
- |
10V |
±20V |
P-Channel |
RFD8P |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Short Leads, IPak, TO-251AA |
I-PAK |
48W (Tc) |
|
|
|
DMN2004WKQ-7 |
Diodes Incorporated |
MOSFET N-CH 20V 540MA SOT323 |
유품322210 pcs |
|
|
- |
20 V |
540mA (Ta) |
550mOhm @ 540mA, 4.5V |
1V @ 250µA |
- |
150 pF @ 16 V |
1.8V, 4.5V |
±8V |
N-Channel |
DMN2004 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-70, SOT-323 |
SOT-323 |
200mW (Ta) |
|
|
|
2SK4077-ZK-E1-AY |
Renesas Electronics America Inc |
SMALL SIGNAL N-CHANNEL MOSFET |
유품43610 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
SIHF15N60E-E3 |
Vishay Siliconix |
MOSFET N-CH 600V 15A TO220 |
유품19129 pcs |
|
|
- |
600 V |
15A (Tc) |
280mOhm @ 8A, 10V |
4V @ 250µA |
78 nC @ 10 V |
1350 pF @ 100 V |
10V |
±30V |
N-Channel |
SIHF15 |
Bulk |
E |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220 Full Pack |
34W (Tc) |
|
|
|
IRL620STRLPBF |
Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
유품23188 pcs |
|
|
- |
200 V |
5.2A (Tc) |
800mOhm @ 3.1A, 10V |
2V @ 250µA |
16 nC @ 5 V |
360 pF @ 25 V |
4V, 10V |
±10V |
N-Channel |
IRL620 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 50W (Tc) |
|
|
|
SISS42LDN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 100V 11.3A/39A PPAK |
유품82300 pcs |
|
|
- |
100 V |
11.3A (Ta), 39A (Tc) |
14.9mOhm @ 15A, 10V |
2.5V @ 250µA |
48 nC @ 10 V |
2058 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
SISS42 |
Tape & Reel (TR) |
TrenchFET® Gen IV |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8S |
PowerPAK® 1212-8S |
4.8W (Ta), 57W (Tc) |
|
|
|
2SJ601-ZK-E1-AZ |
Renesas Electronics America Inc |
MP-3ZK |
유품41700 pcs |
|
|
- |
60 V |
36A (Tc) |
31mOhm @ 18A, 10V |
2.5V @ 1mA |
63 nC @ 10 V |
3300 pF @ 10 V |
4V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252 (MP-3ZK) |
1W (Ta), 65W (Tc) |
|
|
|
AOI4TL60 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO251A |
유품5160 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
AOI4 |
Tube |
- |
- |
- |
- |
- |
- |
- |
|
|
|
CPH3360-TL-W |
onsemi |
CPH3360 - P-CHANNEL POWER MOSFET |
유품4220 pcs |
|
|
- |
30 V |
1.6A (Ta) |
303mOhm @ 800mA, 10V |
2.6V @ 1mA |
2.2 nC @ 10 V |
82 pF @ 10 V |
4V, 10V |
±20V |
P-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
3-CPH |
900mW (Ta) |
|
|
|
NVMFS5C628NT1G |
onsemi |
MOSFET N-CH 60V 28A/150A 5DFN |
유품22062 pcs |
|
|
- |
60 V |
28A (Ta), 150A (Tc) |
3mOhm @ 27A, 10V |
4V @ 135µA |
34 nC @ 10 V |
2630 pF @ 30 V |
10V |
±20V |
N-Channel |
NVMFS5 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.7W (Ta), 110W (Tc) |
|
|
|
NVMFS5C456NLAFT1G |
onsemi |
MOSFET N-CH 40V 87A 5DFN |
유품50320 pcs |
|
|
- |
40 V |
87A (Tc) |
3.7mOhm @ 20A, 10V |
2V @ 250µA |
18 nC @ 10 V |
1600 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
NVMFS5 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
55W (Tc) |
|
|
|
STL80N3LLH6 |
STMicroelectronics |
MOSFET N-CH 30V 80A POWERFLAT |
유품3850 pcs |
|
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- |
30 V |
80A (Tc) |
5.2mOhm @ 10.5A, 10V |
1V @ 250µA |
17 nC @ 4.5 V |
1690 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
STL80 |
Tape & Reel (TR) |
DeepGATE™, STripFET™ VI |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (5x6) |
60W (Tc) |
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|
SQJ152EP-T1_GE3 |
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S) |
유품83400 pcs |
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- |
40 V |
114A (Tc) |
5.1mOhm @ 15A, 10V |
3.5V @ 250µA |
27 nC @ 10 V |
1450 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
TrenchFET® Gen IV |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
136W (Tc) |
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ZXMN2F34MATA |
Diodes Incorporated |
MOSFET N-CH 20V 4A DFN322 |
유품4860 pcs |
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|
- |
20 V |
4A (Ta) |
60mOhm @ 2.5A, 4.5V |
1.5V @ 250µA |
2.8 nC @ 4.5 V |
277 pF @ 10 V |
2.5V, 4.5V |
±12V |
N-Channel |
- |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-PowerVDFN |
DFN322 |
1.35W (Ta) |
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|
AOT240L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 20A/105A TO220 |
유품47330 pcs |
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- |
40 V |
20A (Ta), 105A (Tc) |
2.9mOhm @ 20A, 10V |
2.2V @ 250µA |
72 nC @ 10 V |
4300 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
AOT240 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
1.9W (Ta), 176W (Tc) |
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IRF7759L2TRPBF |
International Rectifier |
IRF7759 - 12V-300V N-CHANNEL POW |
유품3670 pcs |
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- |
75 V |
26A (Ta), 375A (Tc) |
2.3mOhm @ 96A, 10V |
4V @ 250µA |
300 nC @ 10 V |
12222 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric L8 |
DirectFET™ Isometric L8 |
3.3W (Ta), 125W (Tc) |
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BSC015NE2LS5IATMA1 |
Infineon Technologies |
MOSFET N-CH 25V 33A/100A TDSON |
유품58060 pcs |
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- |
25 V |
33A (Ta), 100A (Tc) |
1.5mOhm @ 30A, 10V |
2V @ 250µA |
30 nC @ 10 V |
2000 pF @ 12 V |
4.5V, 10V |
±16V |
N-Channel |
BSC015 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TDSON-8-6 |
2.5W (Ta), 50W (Tc) |
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IRF540PBF |
Vishay Siliconix |
MOSFET N-CH 100V 28A TO220AB |
유품47770 pcs |
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- |
100 V |
28A (Tc) |
77mOhm @ 17A, 10V |
4V @ 250µA |
72 nC @ 10 V |
1700 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF540 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
150W (Tc) |
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|
FDMC6296 |
Fairchild Semiconductor |
MOSFET N-CH 30V 11.5A 8MLP |
유품69130 pcs |
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|
- |
30 V |
11.5A (Ta) |
10.5mOhm @ 11.5A, 10V |
3V @ 250µA |
19 nC @ 5 V |
2141 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-MLP (3.3x3.3) |
900mW (Ta), 2.1W (Tc) |
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APT6010LFLLG |
Microchip Technology |
MOSFET N-CH 600V 54A TO264 |
유품1049 pcs |
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|
- |
600 V |
54A (Tc) |
100mOhm @ 27A, 10V |
5V @ 2.5mA |
150 nC @ 10 V |
6710 pF @ 25 V |
- |
- |
N-Channel |
APT6010 |
Tube |
POWER MOS 7® |
MOSFET (Metal Oxide) |
- |
Through Hole |
TO-264-3, TO-264AA |
TO-264 [L] |
- |
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IXFK150N15P |
IXYS |
MOSFET N-CH 150V 150A TO264AA |
유품5070 pcs |
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- |
150 V |
150A (Tc) |
13mOhm @ 500mA, 10V |
5V @ 4mA |
190 nC @ 10 V |
5800 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFK150 |
Box |
HiPerFET™, Polar |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264AA (IXFK) |
714W (Tc) |
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|
IRF9630STRLPBF |
Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
유품18461 pcs |
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- |
200 V |
6.5A (Tc) |
800mOhm @ 3.9A, 10V |
4V @ 250µA |
29 nC @ 10 V |
700 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9630 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3W (Ta), 74W (Tc) |
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RJK03B9DPA-00#J5A |
Renesas Electronics America Inc |
MOSFET N-CH 30V 30A 8WPAK |
유품85700 pcs |
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- |
30 V |
30A (Ta) |
10.6mOhm @ 15A, 10V |
- |
7.4 nC @ 4.5 V |
1110 pF @ 10 V |
- |
- |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WPAK |
25W (Tc) |
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IPP50R520CP |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품49580 pcs |
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|
- |
500 V |
7.1A (Tc) |
520mOhm @ 3.8A, 10V |
3.5V @ 250µA |
17 nC @ 10 V |
680 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
66W (Tc) |
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