|
|
AOB1606L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 12A/178A TO263 |
유품4220 pcs |
|
|
- |
60 V |
12A (Ta), 178A (Tc) |
6mOhm @ 20A, 10V |
3.7V @ 250µA |
102 nC @ 10 V |
4500 pF @ 25 V |
10V |
±20V |
N-Channel |
AOB16 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263 (D2Pak) |
2.1W (Ta), 417W (Tc) |
|
|
|
MMDF7N02ZR2 |
onsemi |
SMALL SIGNAL N-CHANNEL MOSFET |
유품164820 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FDS4465 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품5290 pcs |
|
|
- |
20 V |
13.5A (Ta) |
8.5mOhm @ 13.5A, 4.5V |
1.5V @ 250µA |
120 nC @ 4.5 V |
8237 pF @ 10 V |
1.8V, 4.5V |
±8V |
P-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
IRFSL4020PBF |
Infineon Technologies |
MOSFET N-CH 200V 18A TO262 |
유품4730 pcs |
|
|
- |
200 V |
18A (Tc) |
105mOhm @ 11A, 10V |
4.9V @ 100µA |
29 nC @ 10 V |
1200 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
100W (Tc) |
|
|
|
FDMS86104 |
Fairchild Semiconductor |
N-CHANNEL SHIELDED GATE POWERTRE |
유품4480 pcs |
|
|
- |
100 V |
7A (Ta), 16A (Tc) |
24mOhm @ 7A, 10V |
4V @ 250µA |
16 nC @ 10 V |
923 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
Power56 |
2.5W (Ta), 73W (Tc) |
|
|
|
IPA60R520CP |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품42913 pcs |
|
|
- |
600 V |
6.8A (Tc) |
520mOhm @ 3.8A, 10V |
3.5V @ 250µA |
31 nC @ 10 V |
630 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-111 |
30W (Tc) |
|
|
|
AUIRF1404 |
Infineon Technologies |
AUIRF1404 - 20V-40V N-CHANNEL AU |
유품6839 pcs |
|
|
- |
40 V |
160A (Tc) |
4mOhm @ 121A, 10V |
4V @ 250µA |
196 nC @ 10 V |
5669 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
333W (Tc) |
|
|
|
2SJ603(0)-Z-E1-AZ |
Renesas |
2SJ603-Z - Pch Single Power Mosf |
유품5430 pcs |
|
|
- |
60 V |
25A (Tc) |
48mOhm @ 13A, 10V |
2.5V @ 1mA |
38 nC @ 10 V |
1900 pF @ 10 V |
10V |
±20V |
P-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263, TO-220SMD |
1.5W (Ta), 50W (Tc) |
|
|
|
NTMFS4934NT3G |
onsemi |
MOSFET N-CH 30V 147A SO8FL |
유품3960 pcs |
|
|
- |
30 V |
17.1A (Ta), 147A (Tc) |
2mOhm @ 30A, 10V |
2.2V @ 250µA |
34 nC @ 4.5 V |
5505 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
930mW (Ta), 69.44W (Tc) |
|
|
|
IRL3103L |
Infineon Technologies |
MOSFET N-CH 30V 64A TO262 |
유품4020 pcs |
|
|
- |
30 V |
64A (Tc) |
12mOhm @ 34A, 10V |
1V @ 250µA |
33 nC @ 4.5 V |
1650 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
94W (Tc) |
|
|
|
2SK3820-DL-1E |
onsemi |
MOSFET N-CH 100V 26A TO263-2 |
유품5410 pcs |
|
|
- |
100 V |
26A (Ta) |
60mOhm @ 13A, 10V |
- |
44 nC @ 10 V |
2150 pF @ 20 V |
4V, 10V |
±20V |
N-Channel |
2SK3820 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TO-263-2 |
1.65W (Ta), 50W (Tc) |
|
|
|
2SJ317NYTL-E |
Renesas Electronics America Inc |
P-CHANNEL SMALL SIGNAL MOSFET |
유품51130 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
TPH3R203NL,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8SOP |
유품60360 pcs |
|
|
- |
30 V |
47A (Tc) |
3.2mOhm @ 23.5A, 10V |
2.3V @ 300µA |
21 nC @ 10 V |
2100 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
TPH3R203 |
Tape & Reel (TR) |
U-MOSVIII-H |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-SOP Advance (5x5) |
1.6W (Ta), 44W (Tc) |
|
|
|
IPB65R600C6 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품3890 pcs |
|
|
- |
650 V |
7.3A (Tc) |
600mOhm @ 2.1A, 10V |
3.5V @ 210µA |
23 nC @ 10 V |
440 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
63W (Tc) |
|
|
|
SIA445EDJ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
유품113730 pcs |
|
|
- |
20 V |
12A (Tc) |
16.5mOhm @ 7A, 4.5V |
1.2V @ 250µA |
72 nC @ 10 V |
2130 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
SIA445 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-70-6 |
PowerPAK® SC-70-6 |
3.5W (Ta), 19W (Tc) |
|
|
|
IXFP14N85X |
IXYS |
MOSFET N-CH 850V 14A TO220AB |
유품8586 pcs |
|
|
- |
850 V |
14A (Tc) |
550mOhm @ 500mA, 10V |
5.5V @ 1mA |
30 nC @ 10 V |
1043 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFP14 |
Tube |
HiPerFET™, Ultra X |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB (IXFP) |
460W (Tc) |
|
|
|
IPD50R500CE |
Infineon Technologies |
IPD50R500 - 500V COOLMOS N-CHANN |
유품93470 pcs |
|
|
- |
500 V |
7.6A (Tc) |
500mOhm @ 2.3A, 13V |
3.5V @ 200µA |
18.7 nC @ 10 V |
433 pF @ 100 V |
13V |
±20V |
N-Channel |
IPD50 |
Bulk |
CoolMOS CE™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-344 |
57W (Tc) |
|
|
|
TK10V60W,LVQ |
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A 4DFN |
유품18576 pcs |
|
|
- |
600 V |
9.7A (Ta) |
380mOhm @ 4.9A, 10V |
3.7V @ 500µA |
20 nC @ 10 V |
700 pF @ 300 V |
10V |
±30V |
N-Channel |
TK10V60 |
Tape & Reel (TR) |
DTMOSIV |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
4-VSFN Exposed Pad |
4-DFN-EP (8x8) |
88.3W (Tc) |
|
|
|
ZXMP7A17GTA |
Diodes Incorporated |
MOSFET P-CH 70V 2.6A SOT223 |
유품78300 pcs |
|
|
- |
70 V |
2.6A (Ta) |
160mOhm @ 2.1A, 10V |
1V @ 250µA |
18 nC @ 10 V |
635 pF @ 40 V |
4.5V, 10V |
±20V |
P-Channel |
ZXMP7A17 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223-3 |
2W (Ta) |
|
|
|
AOD4TL60 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DPAK |
유품4760 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
AOD4 |
Tape & Reel (TR) |
- |
- |
- |
- |
- |
- |
- |
|
|
|
IPA80R1K4P7 |
Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR |
유품4320 pcs |
|
|
- |
800 V |
4A (Tc) |
1.4Ohm @ 1.4A, 10V |
3.5V @ 70µA |
10 nC @ 10 V |
250 pF @ 500 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-31 Full Pack |
24W (Tc) |
|
|
|
FDPF18N50 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품5180 pcs |
|
|
- |
500 V |
18A (Tc) |
265mOhm @ 9A, 10V |
5V @ 250µA |
60 nC @ 10 V |
2860 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
UniFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
38.5W (Tc) |
|
|
|
NVMFS6B14NLWFT3G |
onsemi |
MOSFET N-CH 100V 11A/55A 5DFN |
유품4920 pcs |
|
|
- |
100 V |
11A (Ta), 55A (Tc) |
13mOhm @ 20A, 10V |
3V @ 250µA |
8 nC @ 4.5 V |
1680 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
NVMFS6 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.8W (Ta), 94W (Tc) |
|
|
|
AOI4286 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 4A/14A TO251A |
유품210060 pcs |
|
|
- |
100 V |
4A (Ta), 14A (Tc) |
68mOhm @ 5A, 10V |
2.9V @ 250µA |
10 nC @ 10 V |
390 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
AOI42 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Stub Leads, IPak |
TO-251A |
2.5W (Ta), 30W (Tc) |
|
|
|
TSM4436CS |
Taiwan Semiconductor Corporation |
60V, 8A, SINGLE N-CHANNEL POWER |
유품69230 pcs |
|
|
- |
60 V |
8A (Ta) |
36mOhm @ 4.6A, 10V |
3V @ 250µA |
16 nC @ 4.5 V |
1100 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
TSM4436 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOP |
2.5W (Ta) |
|
|
|
BUZ30AH3045A |
Infineon Technologies |
BUZ30 - 12V-300V N-CHANNEL POWER |
유품3790 pcs |
|
|
- |
200 V |
21A (Tc) |
130mOhm @ 13.5A, 10V |
4V @ 1mA |
- |
1900 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
SIPMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
125W (Tc) |
|
|
|
IRF6678TR1PBF |
Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
유품4030 pcs |
|
|
- |
30 V |
30A (Ta), 150A (Tc) |
2.2mOhm @ 30A, 10V |
2.25V @ 250µA |
65 nC @ 4.5 V |
5640 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 89W (Tc) |
|
|
|
FDMC7582 |
Fairchild Semiconductor |
MOSFET N-CH 25V 16.7A/49A PWR33 |
유품4080 pcs |
|
|
- |
25 V |
16.7A (Ta), 49A (Tc) |
5mOhm @ 16.7A, 10V |
2.5V @ 250µA |
28 nC @ 10 V |
1795 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
Power33 |
2.3W (Ta), 52W (Tc) |
|
|
|
TPH7R506NH,L1Q |
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 22A 8SOP |
유품74520 pcs |
|
|
- |
60 V |
22A (Ta) |
7.5mOhm @ 11A, 10V |
4V @ 300µA |
31 nC @ 10 V |
2320 pF @ 30 V |
10V |
±20V |
N-Channel |
TPH7R506 |
Tape & Reel (TR) |
U-MOSVIII-H |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-SOP Advance (5x5) |
1.6W (Ta), 45W (Tc) |
|
|
|
2SK3107-T1-AT |
Renesas Electronics America Inc |
SMALL SIGNAL N-CHANNEL MOSFET |
유품123130 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IRF640S |
Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
유품4760 pcs |
|
|
- |
200 V |
18A (Tc) |
180mOhm @ 11A, 10V |
4V @ 250µA |
70 nC @ 10 V |
1300 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF640 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 130W (Tc) |
|
|
|
AOT502 |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 33V 9A/60A TO220 |
유품5330 pcs |
|
|
- |
33 V |
9A (Ta), 60A (Tc) |
11.5mOhm @ 30A, 10V |
2.7V @ 250µA |
28 nC @ 10 V |
1450 pF @ 15 V |
10V |
- |
N-Channel |
AOT5 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
1.9W (Ta), 79W (Tc) |
|
|
|
HAT2171H-EL-E |
Renesas Electronics America Inc |
MOSFET N-CH 40V 40A LFPAK |
유품5460 pcs |
|
|
- |
40 V |
40A (Ta) |
4.8mOhm @ 20A, 10V |
- |
52 nC @ 10 V |
3750 pF @ 10 V |
7V, 10V |
±20V |
N-Channel |
HAT2171 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SC-100, SOT-669 |
LFPAK |
25W (Tc) |
|
|
|
IRF3710LPBF |
International Rectifier |
MOSFET N-CH 100V 57A TO262 |
유품3760 pcs |
|
|
- |
100 V |
57A (Tc) |
23mOhm @ 28A, 10V |
4V @ 250µA |
130 nC @ 10 V |
3130 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
200W (Tc) |
|
|
|
NTA4015NT1G |
onsemi |
MOSFET N-CH 20V 238MA SC75 |
유품4590 pcs |
|
|
- |
20 V |
238mA (Tj) |
3Ohm @ 10mA, 4.5V |
1.5V @ 100µA |
- |
20 pF @ 5 V |
- |
±10V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
SC-75, SOT-416 |
SC-75, SOT-416 |
300mW (Tj) |
|
|
|
SQJ868EP-T1_GE3 |
Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
유품97150 pcs |
|
|
- |
40 V |
58A (Tc) |
7.35mOhm @ 14A, 10V |
3.5V @ 250µA |
55 nC @ 10 V |
2450 pF @ 20 V |
10V |
±20V |
N-Channel |
SQJ868 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
48W (Tc) |
|
|
|
IXFH80N65X2 |
IXYS |
MOSFET N-CH 650V 80A TO247 |
유품4484 pcs |
|
|
- |
650 V |
80A (Tc) |
40mOhm @ 40A, 10V |
5.5V @ 4mA |
143 nC @ 10 V |
8245 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFH80 |
Tube |
HiPerFET™, Ultra X2 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247 (IXTH) |
890W (Tc) |
|
|
|
AOT262L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 20A/140A TO220 |
유품21110 pcs |
|
|
- |
60 V |
20A (Ta), 140A (Tc) |
3mOhm @ 20A, 10V |
3.2V @ 250µA |
115 nC @ 10 V |
9800 pF @ 30 V |
6V, 10V |
±20V |
N-Channel |
AOT262 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
2.1W (Ta), 333W (Tc) |
|
|
|
DMN3024SFG-7 |
Diodes Incorporated |
MOSFET N-CH 30V 7.5A PWRDI3333-8 |
유품282940 pcs |
|
|
- |
30 V |
7.5A (Ta) |
23mOhm @ 10A, 10V |
2.4V @ 250µA |
10.5 nC @ 10 V |
479 pF @ 15 V |
4.5V, 10V |
±25V |
N-Channel |
DMN3024 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
POWERDI3333-8 |
900mW (Ta) |
|
|
|
IRF840AS |
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
유품4070 pcs |
|
|
- |
500 V |
8A (Tc) |
850mOhm @ 4.8A, 10V |
4V @ 250µA |
38 nC @ 10 V |
1018 pF @ 25 V |
10V |
±30V |
N-Channel |
IRF840 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 125W (Tc) |
|
|
|
IRFZ20PBF |
Vishay Siliconix |
MOSFET N-CH 50V 15A TO220AB |
유품39700 pcs |
|
|
- |
50 V |
15A (Tc) |
100mOhm @ 10A, 10V |
4V @ 250µA |
17 nC @ 10 V |
850 pF @ 25 V |
10V |
±20V |
N-Channel |
IRFZ20 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
40W (Tc) |
|
|
|
NTMFS4921NT3G |
onsemi |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
유품4810 pcs |
|
|
- |
30 V |
8.8A (Ta), 58.5A (Tc) |
6.95mOhm @ 30A, 10V |
2.5V @ 250µA |
25 nC @ 11.5 V |
1400 pF @ 12 V |
4.5V, 11.5V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
870mW (Ta), 38.5W (Tc) |
|
|
|
SPI15N60C3 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품29792 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IXTK46N50L |
IXYS |
MOSFET N-CH 500V 46A TO264 |
유품1045 pcs |
|
|
- |
500 V |
46A (Tc) |
160mOhm @ 500mA, 20V |
6V @ 250µA |
260 nC @ 15 V |
7000 pF @ 25 V |
20V |
±30V |
N-Channel |
IXTK46 |
Bulk |
Linear |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264 (IXTK) |
700W (Tc) |
|
|
|
CSD18540Q5B |
Texas Instruments |
MOSFET N-CH 60V 100A 8VSON |
유품23393 pcs |
|
|
- |
60 V |
100A (Ta) |
2.2mOhm @ 28A, 10V |
2.3V @ 250µA |
53 nC @ 10 V |
4230 pF @ 30 V |
4.5V, 10V |
±20V |
N-Channel |
CSD18540 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-VSON-CLIP (5x6) |
3.1W (Ta), 195W (Tc) |
|
|
|
IRF6717MTR1PBF |
Infineon Technologies |
MOSFET N-CH 25V 38A DIRECTFET |
유품3730 pcs |
|
|
- |
25 V |
38A (Ta), 200A (Tc) |
1.25mOhm @ 38A, 10V |
2.35V @ 150µA |
69 nC @ 4.5 V |
6750 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MX |
DIRECTFET™ MX |
2.8W (Ta), 96W (Tc) |
|
|
|
RJK0853DPB-00#J5 |
Renesas Electronics America Inc |
MOSFET N-CH 80V 40A LFPAK |
유품36117 pcs |
|
|
- |
80 V |
40A (Ta) |
8mOhm @ 20A, 10V |
- |
40 nC @ 4.5 V |
6170 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
RJK0853 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
SC-100, SOT-669 |
LFPAK |
65W (Tc) |
|
|
|
IRF6709S2TR1PBF |
Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET |
유품4990 pcs |
|
|
- |
25 V |
12A (Ta), 39A (Tc) |
7.8mOhm @ 12A, 10V |
2.35V @ 25µA |
12 nC @ 4.5 V |
1010 pF @ 13 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric S1 |
DirectFET™ Isometric S1 |
1.8W (Ta), 21W (Tc) |
|
|
|
NTMFS4C59NT1G |
onsemi |
MOSFET N-CH 30V 9A/52A 5DFN |
유품28742 pcs |
|
|
- |
30 V |
9A (Ta), 52A (Tc) |
5.8mOhm @ 30A, 10V |
2.1V @ 250µA |
22.2 nC @ 10 V |
1252 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NTMFS4 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
760mW (Ta) |
|
|
|
DMG4710SSS-13 |
Diodes Incorporated |
MOSFET N-CH 30V 8.8A 8SOP |
유품5050 pcs |
|
|
Schottky Diode (Body) |
30 V |
8.8A (Ta) |
12.5mOhm @ 11.7A, 10V |
2.3V @ 250µA |
43 nC @ 10 V |
1849 pF @ 15 V |
4.5V, 10V |
±12V |
N-Channel |
DMG4710 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
1.54W (Ta) |
|