|
|
IXFK44N55Q |
IXYS |
MOSFET N-CH 550V 44A TO264AA |
유품5350 pcs |
|
|
- |
550 V |
44A (Tc) |
120mOhm @ 22A, 10V |
4.5V @ 4mA |
190 nC @ 10 V |
6400 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFK44 |
Box |
HiPerFET™, Q Class |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264AA (IXFK) |
500W (Tc) |
|
|
|
RS1G300GNTB |
Rohm Semiconductor |
MOSFET N-CH 40V 30A 8HSOP |
유품42220 pcs |
|
|
- |
40 V |
30A (Ta) |
2.5mOhm @ 30A, 10V |
2.5V @ 1mA |
56.8 nC @ 10 V |
4230 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
RS1G |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-HSOP |
3W (Ta), 35W (Tc) |
|
|
|
BUZ323 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품15487 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
- |
- |
- |
- |
- |
- |
- |
|
|
|
EPC2039 |
EPC |
GANFET N-CH 80V 6.8A DIE |
유품43610 pcs |
|
|
- |
80 V |
6.8A (Ta) |
25mOhm @ 6A, 5V |
2.5V @ 2mA |
2.4 nC @ 5 V |
210 pF @ 40 V |
5V |
+6V, -4V |
N-Channel |
EPC20 |
Tape & Reel (TR) |
eGaN® |
GaNFET (Gallium Nitride) |
-40°C ~ 150°C (TJ) |
Surface Mount |
Die |
Die |
- |
|
|
|
NVMFS6B25NLWFT1G |
onsemi |
NVMFS6B25 - SINGLE N-CHANNEL POW |
유품4150 pcs |
|
|
- |
100 V |
8A (Ta), 33A (Ta) |
24mOhm @ 20A, 10V |
3V @ 250µA |
13.5 nC @ 10 V |
905 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
- |
Bulk |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.6W (Ta), 62W (Tc) |
|
|
|
IXFH58N20 |
IXYS |
MOSFET N-CH 200V 58A TO247AD |
유품4020 pcs |
|
|
- |
200 V |
58A (Tc) |
40mOhm @ 29A, 10V |
4V @ 4mA |
220 nC @ 10 V |
4400 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFH58 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
300W (Tc) |
|
|
|
IXFK60N55Q2 |
IXYS |
MOSFET N-CH 550V 60A TO264AA |
유품3770 pcs |
|
|
- |
550 V |
60A (Tc) |
88mOhm @ 30A, 10V |
4.5V @ 8mA |
200 nC @ 10 V |
7300 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFK60 |
Tube |
HiPerFET™, Q2 Class |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264AA (IXFK) |
735W (Tc) |
|
|
|
AON6260L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 8DFN |
유품5060 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
AON62 |
Tape & Reel (TR) |
- |
- |
- |
- |
- |
- |
- |
|
|
|
DMN62D0LFD-7 |
Diodes Incorporated |
MOSFET N-CH 60V 310MA 3DFN |
유품648950 pcs |
|
|
- |
60 V |
310mA (Ta) |
2Ohm @ 100mA, 4V |
1V @ 250µA |
0.5 nC @ 4.5 V |
31 pF @ 25 V |
1.8V, 4V |
±20V |
N-Channel |
DMN62 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
3-UDFN |
X1-DFN1212-3 |
480mW (Ta) |
|
|
|
SQD30N05-20L_GE3 |
Vishay Siliconix |
MOSFET N-CH 55V 30A TO252AA |
유품64610 pcs |
|
|
- |
55 V |
30A (Tc) |
20mOhm @ 20A, 10V |
2.5V @ 250µA |
18 nC @ 5 V |
1175 pF @ 25 V |
4.5V, 10V |
±20V |
N-Channel |
SQD30 |
Tape & Reel (TR) |
Automotive, AEC-Q101, TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252AA |
50W (Tc) |
|
|
|
RQ3E160ADTB |
Rohm Semiconductor |
MOSFET N-CH 30V 16A 8HSMT |
유품117860 pcs |
|
|
- |
30 V |
16A (Ta) |
4.5mOhm @ 16A, 10V |
2.5V @ 1mA |
51 nC @ 10 V |
2550 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
RQ3E160 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-HSMT (3.2x3) |
2W (Ta) |
|
|
|
IRF840SPBF |
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
유품46630 pcs |
|
|
- |
500 V |
8A (Tc) |
850mOhm @ 4.8A, 10V |
4V @ 250µA |
63 nC @ 10 V |
1300 pF @ 25 V |
10V |
±20V |
N-Channel |
IRF840 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.1W (Ta), 125W (Tc) |
|
|
|
STL34N65M5 |
STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
유품4950 pcs |
|
|
- |
650 V |
22.5A (Tc) |
120mOhm @ 12A, 10V |
5V @ 250µA |
62.5 nC @ 10 V |
2700 pF @ 100 V |
10V |
±25V |
N-Channel |
STL34 |
Tape & Reel (TR) |
MDmesh™ V |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (8x8) HV |
2.8W (Ta), 150W (Tc) |
|
|
|
NDB5060L |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 2 |
유품4660 pcs |
|
|
- |
60 V |
26A (Tc) |
35mOhm @ 13A, 10V |
2V @ 250µA |
24 nC @ 5 V |
840 pF @ 30 V |
5V, 10V |
±16V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
-65°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
68W (Tc) |
|
|
|
IPW60R060P7XKSA1 |
Infineon Technologies |
MOSFET N-CH 600V 48A TO247-3 |
유품10903 pcs |
|
|
- |
600 V |
48A (Tc) |
60mOhm @ 15.9A, 10V |
4V @ 800µA |
67 nC @ 10 V |
2895 pF @ 400 V |
10V |
±20V |
N-Channel |
IPW60R060 |
Tube |
CoolMOS™ P7 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
PG-TO247-3 |
164W (Tc) |
|
|
|
SIA817EDJ-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V 4.5A PPAK SC70-6 |
유품222200 pcs |
|
|
Schottky Diode (Isolated) |
30 V |
4.5A (Tc) |
65mOhm @ 3A, 10V |
1.3V @ 250µA |
23 nC @ 10 V |
600 pF @ 15 V |
2.5V, 10V |
±12V |
P-Channel |
SIA817 |
Tape & Reel (TR) |
LITTLE FOOT® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-70-6 Dual |
PowerPAK® SC-70-6 Dual |
1.9W (Ta), 6.5W (Tc) |
|
|
|
FQP6N80 |
Fairchild Semiconductor |
MOSFET N-CH 800V 5.8A TO220-3 |
유품4840 pcs |
|
|
- |
800 V |
5.8A (Tc) |
1.95Ohm @ 2.9A, 10V |
5V @ 250µA |
31 nC @ 10 V |
1500 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
158W (Tc) |
|
|
|
FDMS86263P |
onsemi |
MOSFET P-CH 150V 4.4A/22A 8PQFN |
유품23244 pcs |
|
|
- |
150 V |
4.4A (Ta), 22A (Tc) |
53mOhm @ 4.4A, 10V |
4V @ 250µA |
63 nC @ 10 V |
3905 pF @ 75 V |
6V, 10V |
±25V |
P-Channel |
FDMS86263 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
2.5W (Ta), 104W (Tc) |
|
|
|
IPD50N03S2-07 |
Infineon Technologies |
OPTLMOS N-CHANNEL POWER MOSFET |
유품5330 pcs |
|
|
- |
30 V |
50A (Tc) |
7.3mOhm @ 50A, 10V |
4V @ 85µA |
68 nC @ 10 V |
2000 pF @ 25 V |
10V |
±20V |
N-Channel |
IPD50 |
Bulk |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-1 |
136W (Tc) |
|
|
|
NVTFS4C06NTAG |
onsemi |
MOSFET N-CH 30V 21A 8WDFN |
유품47700 pcs |
|
|
- |
30 V |
21A (Ta) |
4.2mOhm @ 30A, 10V |
2.2V @ 250µA |
26 nC @ 10 V |
1683 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
NVTFS4 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-WDFN (3.3x3.3) |
3.1W (Ta), 37W (Tc) |
|
|
|
IPP086N10N3 |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품3820 pcs |
|
|
- |
100 V |
80A (Tc) |
8.6mOhm @ 73A, 10V |
3.5V @ 75µA |
55 nC @ 10 V |
3980 pF @ 50 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
PG-TO220-3-1 |
125W (Tc) |
|
|
|
FCPF16N60NT |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품3820 pcs |
|
|
- |
600 V |
16A (Tc) |
199mOhm @ 8A, 10V |
4V @ 250µA |
52.3 nC @ 10 V |
2170 pF @ 100 V |
10V |
±30V |
N-Channel |
- |
Bulk |
SupreMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
35.7W (Tc) |
|
|
|
2SK4078-ZK-E1-AY |
Renesas Electronics America Inc |
SMALL SIGNAL N-CHANNEL MOSFET |
유품45610 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
PSMN5R0-80PS,127 |
Nexperia USA Inc. |
MOSFET N-CH 80V 100A TO220AB |
유품26774 pcs |
|
|
- |
80 V |
100A (Tc) |
4.7mOhm @ 15A, 10V |
4V @ 1mA |
101 nC @ 10 V |
6793 pF @ 12 V |
10V |
±20V |
N-Channel |
PSMN5R0 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
270W (Tc) |
|
|
|
PMPB10ENZ |
Nexperia USA Inc. |
MOSFET N-CH 30V 10A DFN2020MD-6 |
유품323250 pcs |
|
|
- |
30 V |
10A (Ta) |
12mOhm @ 9A, 10V |
2V @ 250µA |
20.6 nC @ 10 V |
840 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
PMPB10 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-UDFN Exposed Pad |
DFN2020MD-6 |
1.8W (Ta), 12.5W (Tc) |
|
|
|
IRF6618TRPBF |
International Rectifier |
IRF6618 - DIRECTFET POWER MOSFET |
유품4460 pcs |
|
|
- |
30 V |
30A (Ta), 170A (Tc) |
2.2mOhm @ 30A, 10V |
2.35V @ 250µA |
65 nC @ 4.5 V |
5640 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
DirectFET™ Isometric MT |
DIRECTFET™ MT |
2.8W (Ta), 89W (Tc) |
|
|
|
FQI8N60CTU |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 7 |
유품24285 pcs |
|
|
- |
600 V |
7.5A (Tc) |
1.2Ohm @ 3.75A, 10V |
4V @ 250µA |
36 nC @ 10 V |
1255 pF @ 25 V |
10V |
±30V |
N-Channel |
FQI8N60 |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
I2PAK (TO-262) |
3.13W (Ta), 147W (Tc) |
|
|
|
FQB4N80TM |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 3 |
유품4330 pcs |
|
|
- |
800 V |
3.9A (Tc) |
3.6Ohm @ 1.95A, 10V |
5V @ 250µA |
25 nC @ 10 V |
880 pF @ 25 V |
10V |
±30V |
N-Channel |
- |
Bulk |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
3.13W (Ta), 130W (Tc) |
|
|
|
IPA50R350CP |
Infineon Technologies |
10A, 500V, 0.35OHM, N-CHANNEL, |
유품34782 pcs |
|
|
- |
500 V |
10A (Tc) |
350mOhm @ 5.6A, 10V |
3.5V @ 370µA |
25 nC @ 10 V |
1020 pF @ 100 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
PG-TO220-3-31 |
32W (Tc) |
|
|
|
IRL3715ZLPBF |
Infineon Technologies |
MOSFET N-CH 20V 50A TO262 |
유품4530 pcs |
|
|
- |
20 V |
50A (Tc) |
11mOhm @ 15A, 10V |
2.55V @ 250µA |
11 nC @ 4.5 V |
870 pF @ 10 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tube |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
TO-262 |
45W (Tc) |
|
|
|
SI7336ADP-T1-E3 |
Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
유품39000 pcs |
|
|
- |
30 V |
30A (Ta) |
3mOhm @ 25A, 10V |
3V @ 250µA |
50 nC @ 4.5 V |
5600 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SI7336 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5.4W (Ta) |
|
|
|
FCPF380N60E |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, N |
유품5240 pcs |
|
|
- |
600 V |
10.2A (Tc) |
380mOhm @ 5A, 10V |
3.5V @ 250µA |
45 nC @ 10 V |
1770 pF @ 25 V |
10V |
±20V |
N-Channel |
FCPF380 |
Bulk |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F |
31W (Tc) |
|
|
|
IXFN100N10S3 |
IXYS |
MOSFET N-CH 100V 100A SOT-227B |
유품4520 pcs |
|
|
- |
100 V |
100A (Tc) |
15mOhm @ 500mA, 10V |
4V @ 4mA |
180 nC @ 10 V |
4500 pF @ 25 V |
10V |
±20V |
N-Channel |
IXFN100 |
Tube |
HiPerFET™ |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
360W (Tc) |
|
|
|
STFU18N60M2 |
STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
유품35798 pcs |
|
|
- |
600 V |
13A (Tc) |
280mOhm @ 6.5A, 10V |
4V @ 250µA |
21.5 nC @ 10 V |
791 pF @ 100 V |
10V |
±25V |
N-Channel |
STFU18 |
Tube |
MDmesh™ M2 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220FP |
25W (Tc) |
|
|
|
MTSF3N03HDR2 |
onsemi |
SMALL SIGNAL N-CHANNEL MOSFET |
유품172560 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
IRFB16N60LPBF |
Vishay Siliconix |
MOSFET N-CH 600V 16A TO220AB |
유품4340 pcs |
|
|
- |
600 V |
16A (Tc) |
460mOhm @ 9A, 10V |
5V @ 250µA |
100 nC @ 10 V |
2720 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFB16 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
310W (Tc) |
|
|
|
NTMFS0D9N03CGT1G |
onsemi |
MOSFET N-CH 30V 48A/298A 5DFN |
유품18020 pcs |
|
|
- |
30 V |
48A (Ta), 298A (Tc) |
0.9mOhm @ 20A, 10V |
2.2V @ 200µA |
131.4 nC @ 10 V |
9450 pF @ 15 V |
10V |
±20V |
N-Channel |
NTMFS0 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerTDFN, 5 Leads |
5-DFN (5x6) (8-SOFL) |
3.8W (Ta), 144W (Tc) |
|
|
|
PMCPB5530X |
NXP USA Inc. |
NOW NEXPERIA PMCPB5530X - SMALL |
유품3820 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
SI7489DP-T1-E3 |
Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |
유품30941 pcs |
|
|
- |
100 V |
28A (Tc) |
41mOhm @ 7.8A, 10V |
3V @ 250µA |
160 nC @ 10 V |
4600 pF @ 50 V |
4.5V, 10V |
±20V |
P-Channel |
SI7489 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5.2W (Ta), 83W (Tc) |
|
|
|
SIR168DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
유품4650 pcs |
|
|
- |
30 V |
40A (Tc) |
4.4mOhm @ 15A, 10V |
2.4V @ 250µA |
75 nC @ 10 V |
2040 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
SIR168 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SO-8 |
PowerPAK® SO-8 |
5W (Ta), 34.7W (Tc) |
|
|
|
IXFH12N100P |
IXYS |
MOSFET N-CH 1000V 12A TO247AD |
유품5245 pcs |
|
|
- |
1000 V |
12A (Tc) |
1.05Ohm @ 6A, 10V |
5V @ 1mA |
80 nC @ 10 V |
4080 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFH12 |
Tube |
HiPerFET™, Polar |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AD (IXFH) |
463W (Tc) |
|
|
|
ZXMP10A17GQTA |
Diodes Incorporated |
MOSFET P-CH 100V 2.4A SOT223 |
유품76140 pcs |
|
|
- |
100 V |
2.4A (Ta) |
350mOhm @ 1.4A, 10V |
4V @ 250µA |
10.7 nC @ 10 V |
424 pF @ 50 V |
6V, 10V |
±20V |
P-Channel |
ZXMP10 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223-3 |
2W (Ta) |
|
|
|
RSS065N06FW6TB1 |
Rohm Semiconductor |
MOSFET N-CH 60V 6.5A SOP8 |
유품4770 pcs |
|
|
- |
- |
6.5A |
- |
- |
- |
- |
- |
- |
- |
- |
Tape & Reel (TR) |
- |
- |
- |
- |
- |
- |
- |
|
|
|
HUFA75309D3S |
Fairchild Semiconductor |
MOSFET N-CH 55V 19A TO252AA |
유품158140 pcs |
|
|
- |
55 V |
19A (Tc) |
70mOhm @ 19A, 10V |
4V @ 250µA |
24 nC @ 20 V |
350 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Tube |
UltraFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
55W (Tc) |
|
|
|
AUIRF7749L2TR |
Infineon Technologies |
MOSFET N-CH 60V 36A DIRECTFET |
유품7338 pcs |
|
|
- |
60 V |
36A (Ta), 345A (Tc) |
1.5mOhm @ 120A, 10V |
4V @ 250µA |
275 nC @ 10 V |
10655 pF @ 25 V |
10V |
±20V |
N-Channel |
AUIRF7749 |
Tape & Reel (TR) |
Automotive, AEC-Q101, OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
DirectFET™ Isometric L8 |
DirectFET™ Isometric L8 |
3.8W (Ta), 341W (Tc) |
|
|
|
CSD25404Q3T |
Texas Instruments |
MOSFET P-CH 20V 104A 8VSON |
유품41920 pcs |
|
|
- |
20 V |
104A (Tc) |
6.5mOhm @ 10A, 4.5V |
1.15V @ 250µA |
14.1 nC @ 4.5 V |
2120 pF @ 10 V |
1.8V, 4.5V |
±12V |
P-Channel |
CSD25404 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-VSONP (3x3.15) |
2.8W (Ta), 96W (Tc) |
|
|
|
AUIRFS4010 |
International Rectifier |
MOSFET N-CH 100V 180A TO263 |
유품3640 pcs |
|
|
- |
100 V |
180A (Tc) |
4.7mOhm @ 106A, 10V |
4V @ 250µA |
215 nC @ 10 V |
9575 pF @ 50 V |
- |
±20V |
N-Channel |
- |
Bulk |
Automotive, AEC-Q101, HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
375W (Tc) |
|
|
|
CSD13202Q2 |
Texas Instruments |
MOSFET N-CH 12V 22A 6WSON |
유품158960 pcs |
|
|
- |
12 V |
22A (Ta) |
9.3mOhm @ 5A, 4.5V |
1.1V @ 250µA |
6.6 nC @ 4.5 V |
997 pF @ 6 V |
2.5V, 4.5V |
±8V |
N-Channel |
CSD13202 |
Tape & Reel (TR) |
NexFET™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-WDFN Exposed Pad |
6-WSON (2x2) |
2.7W (Ta) |
|
|
|
IRF530NSPBF |
International Rectifier |
HEXFET POWER MOSFET |
유품3990 pcs |
|
|
- |
100 V |
17A (Tc) |
90mOhm @ 9A, 10V |
4V @ 250µA |
37 nC @ 10 V |
920 pF @ 25 V |
10V |
±20V |
N-Channel |
- |
Bulk |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK |
3.8W (Ta), 70W (Tc) |
|
|
|
FDMA8051L |
Fairchild Semiconductor |
SMALL SIGNAL FIELD-EFFECT TRANSI |
유품5300 pcs |
|
|
- |
40 V |
10A (Tc) |
14mOhm @ 10A, 10V |
3V @ 250µA |
20 nC @ 10 V |
1260 pF @ 20 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-WDFN Exposed Pad |
6-MicroFET (2x2) |
2.4W (Ta) |
|