비교 | 그림 | 부분 # | 제조사 | 기술 | 재고 | ECAD 모델 | RoHS | FET 특징 | 소스 전압에 드레인 (Vdss) | 전류 - 25 ° C에서 연속 드레인 (Id) | 이드의 Vgs @ RDS에서 (최대) | 아이디 @ VGS (일) (최대) | 게이트 차지 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전압 - 테스트 | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Vgs (최대) | FET 유형 | 다른 이름들 | 기본 제품 번호 | 패키지 | 연속 | 제조업체 부품 번호 | 기술 | 수분 민감도 (MSL) | 제조업체 표준 리드 타임 | 확장 설명 | RoHS 상태 | 과학 기술 | 작동 온도 | 실장 형 | 패키지 / 케이스 | 편광 | 제조업체 장치 패키지 | 전압 - 파괴 | 전력 소비 (최대) | 용량 비율 | 수량 |
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FDMS6681Z | onsemi | MOSFET P-CH 30V 21.1A/49A 8PQFN | 유품3830 pcs | - | 30 V | 21.1A (Ta), 49A (Tc) | 3.2mOhm @ 22.1A, 10V | 3V @ 250µA | 241 nC @ 10 V | 10380 pF @ 15 V | - | 4.5V, 10V | ±25V | P-Channel | - | FDMS6681 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-PQFN (5x6) | - | 2.5W (Ta), 73W (Tc) | - | |||||
FQA19N60 | Fairchild Semiconductor | MOSFET N-CH 600V 18.5A TO3PN | 유품5040 pcs | - | 600 V | 18.5A (Tc) | 380mOhm @ 9.3A, 10V | 5V @ 250µA | 90 nC @ 10 V | 3600 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | - | TO-3PN | - | 300W (Tc) | - | |||||
SI1411DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 150V 420MA SOT363 | 유품95910 pcs | - | 150 V | 420mA (Ta) | 2.6Ohm @ 500mA, 10V | 4.5V @ 100µA | 6.3 nC @ 10 V | - | - | 10V | ±20V | P-Channel | - | SI1411 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | SC-70-6 | - | 1W (Ta) | - | |||||
FDP6670AL | Fairchild Semiconductor | MOSFET N-CH 30V 80A TO220-3 | 유품46910 pcs | - | 30 V | 80A (Ta) | 6.5mOhm @ 40A, 10V | 3V @ 250µA | 33 nC @ 5 V | 2440 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tube | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 68W (Tc) | - | |||||
NVTFS5116PLTAG | onsemi | MOSFET P-CH 60V 6A 8WDFN | 유품72630 pcs | - | 60 V | 6A (Ta) | 52mOhm @ 7A, 10V | 3V @ 250µA | 25 nC @ 10 V | 1258 pF @ 25 V | - | 4.5V, 10V | ±20V | P-Channel | - | NVTFS5116 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-WDFN (3.3x3.3) | - | 3.2W (Ta), 21W (Tc) | - | |||||
CSD16342Q5A | Texas Instruments | MOSFET N-CH 25V 100A 8VSON | 유품66580 pcs | - | 25 V | 100A (Tc) | 4.7mOhm @ 20A, 8V | 1.1V @ 250µA | 7.1 nC @ 4.5 V | 1350 pF @ 12.5 V | - | 2.5V, 8V | +10V, -8V | N-Channel | - | CSD16342 | Tape & Reel (TR) | NexFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-VSONP (5x6) | - | 3W (Ta) | - | |||||
FDP42AN15A0 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 5 | 유품4750 pcs | - | 150 V | 5A (Ta), 35A (Tc) | 42mOhm @ 12A, 10V | 4V @ 250µA | 39 nC @ 10 V | 2150 pF @ 25 V | - | 6V, 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 150W (Tc) | - | |||||
CSD17578Q5A | Texas Instruments | MOSFET N-CH 30V 25A 8VSON | 유품130050 pcs | - | 30 V | 25A (Ta) | 6.9mOhm @ 10A, 10V | 1.9V @ 250µA | 22.3 nC @ 10 V | 1510 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | CSD17578 | Tape & Reel (TR) | NexFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-VSONP (5x6) | - | 3.1W (Ta), 42W (Tc) | - | |||||
IRLU120NPBF | Infineon Technologies | MOSFET N-CH 100V 10A IPAK | 유품93240 pcs | - | 100 V | 10A (Tc) | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | 440 pF @ 25 V | - | 4V, 10V | ±16V | N-Channel | - | IRLU120 | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | IPAK (TO-251AA) | - | 48W (Tc) | - | |||||
NTMFS4119NT1G | onsemi | MOSFET N-CH 30V 11A 5DFN | 유품4780 pcs | - | 30 V | 11A (Ta) | 3.5mOhm @ 29A, 10V | 2.5V @ 250µA | 60 nC @ 4.5 V | 4800 pF @ 24 V | - | 4.5V, 10V | ±20V | N-Channel | - | NTMFS4 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 900mW (Ta) | - | |||||
SIR670DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A PPAK SO-8 | 유품57320 pcs | - | 60 V | 60A (Tc) | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 63 nC @ 10 V | 2815 pF @ 30 V | - | 4.5V, 10V | ±20V | N-Channel | - | SIR670 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5W (Ta), 56.8W (Tc) | - | |||||
SIR416DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 50A PPAK SO-8 | 유품50920 pcs | - | 40 V | 50A (Tc) | 3.8mOhm @ 15A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | 3350 pF @ 20 V | - | 4.5V, 10V | ±20V | N-Channel | - | SIR416 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5.2W (Ta), 69W (Tc) | - | |||||
2N6766 | Microsemi Corporation | MOSFET N-CH 200V 30A TO3 | 유품4390 pcs | - | 200 V | 30A (Tc) | 90mOhm @ 30A, 10V | 4V @ 250µA | 115 nC @ 10 V | - | - | 10V | ±20V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | - | TO-3 | - | 4W (Ta), 150W (Tc) | - | |||||
IXFK27N80 | IXYS | MOSFET N-CH 800V 27A TO264AA | 유품4570 pcs | - | 800 V | 27A (Tc) | 300mOhm @ 13.5A, 10V | 4.5V @ 8mA | 400 nC @ 10 V | 9740 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFK27 | Tube | HiPerFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | - | 500W (Tc) | - | |||||
IRLZ14STRL | Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | 유품5470 pcs | - | 60 V | 10A (Tc) | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | 400 pF @ 25 V | - | 4V, 5V | ±10V | N-Channel | - | IRLZ14 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D²PAK (TO-263) | - | 3.7W (Ta), 43W (Tc) | - | |||||
IRF6612TRPBF | Infineon Technologies | MOSFET N-CH 30V 24A DIRECTFET | 유품3810 pcs | - | 30 V | 24A (Ta), 136A (Tc) | 3.3mOhm @ 24A, 10V | 2.25V @ 250µA | 45 nC @ 4.5 V | 3970 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | - | DIRECTFET™ MX | - | 2.8W (Ta), 89W (Tc) | - | |||||
AOL1448 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 11A/36A ULTRASO8 | 유품4030 pcs | - | 30 V | 11A (Ta), 36A (Tc) | 9.5mOhm @ 20A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | 770 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | AOL14 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerSMD, Flat Leads | - | UltraSO-8™ | - | 2W (Ta), 30W (Tc) | - | |||||
AOTL42A60 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V TOLLA | 유품4000 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||||
FQB2P25TM | Fairchild Semiconductor | MOSFET P-CH 250V 2.3A D2PAK | 유품4130 pcs | - | 250 V | 2.3A (Tc) | 4Ohm @ 1.15A, 10V | 5V @ 250µA | 8.5 nC @ 10 V | 250 pF @ 25 V | - | 10V | ±30V | P-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK (TO-263) | - | 3.13W (Ta), 52W (Tc) | - | |||||
IPB065N06LG | Infineon Technologies | N-CHANNEL POWER MOSFET | 유품4970 pcs | - | 60 V | 80A (Tc) | 6.2mOhm @ 80A, 10V | 2V @ 180µA | 157 nC @ 10 V | 5100 pF @ 30 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | OptiMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | PG-TO263-3-2 | - | 250W (Tc) | - | |||||
SUD50N04-16P-E3 | Vishay Siliconix | MOSFET N-CH 40V 9.8A/20A TO252 | 유품3880 pcs | - | 40 V | 9.8A (Ta), 20A (Tc) | 16mOhm @ 15A, 10V | 2.2V @ 250µA | 60 nC @ 10 V | 1655 pF @ 20 V | - | 4.5V, 10V | ±16V | N-Channel | - | SUD50 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | - | 3.1W (Ta), 35.7W (Tc) | - | |||||
IRFS3006PBF | International Rectifier | HEXFET N-CHANNEL POWER MOSFET | 유품3870 pcs | - | 60 V | 195A (Tc) | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | 8970 pF @ 50 V | - | 10V | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 375W (Tc) | - | |||||
FDMC86240 | onsemi | MOSFET N-CH 150V 4.6A/16A 8MLP | 유품37324 pcs | - | 150 V | 4.6A (Ta), 16A (Tc) | 51mOhm @ 4.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | 905 pF @ 75 V | - | 6V, 10V | ±20V | N-Channel | - | FDMC86 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-MLP (3.3x3.3) | - | 2.3W (Ta), 40W (Tc) | - | |||||
NTMFS4983NBFT1G | onsemi | MOSFET N-CH 30V 22A/106A 5DFN | 유품4520 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||||
DMP2005UFG-13 | Diodes Incorporated | MOSFET P-CH 20V 89A POWERDI3333 | 유품96280 pcs | - | 20 V | 89A (Tc) | 4mOhm @ 15A, 4.5V | 900mV @ 250µA | 125 nC @ 10 V | 4670 pF @ 10 V | - | 1.8V, 4.5V | ±10V | P-Channel | - | DMP2005 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerDI3333-8 | - | 2.2W (Ta) | - | |||||
FDD8750 | Fairchild Semiconductor | MOSFET N-CH 25V 6.5A/2.7A DPAK | 유품88220 pcs | - | 25 V | 6.5A (Ta), 2.7A (Tc) | 40mOhm @ 2.7A, 10V | 2.5V @ 250µA | 9 nC @ 10 V | 425 pF @ 13 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252, (D-Pak) | - | 3.7W (Ta), 18W (Tc) | - | |||||
SFR9110TF | Fairchild Semiconductor | MOSFET P-CH 100V 2.8A DPAK | 유품59080 pcs | - | 100 V | 2.8A (Tc) | 1.2Ohm @ 1.4A, 10V | 4V @ 250µA | 10 nC @ 10 V | 335 pF @ 25 V | - | 10V | ±30V | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252, (D-Pak) | - | 2.5W (Ta), 20W (Tc) | - | |||||
IRFR420TRLPBF | Vishay Siliconix | MOSFET N-CH 500V 2.4A DPAK | 유품61500 pcs | - | 500 V | 2.4A (Tc) | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | 360 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRFR420 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 2.5W (Ta), 42W (Tc) | - | |||||
IPW65R190E6 | Infineon Technologies | N-CHANNEL POWER MOSFET | 유품17455 pcs | - | 650 V | 20.2A (Tc) | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | 1620 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | PG-TO247-3-41 | - | 151W (Tc) | - | |||||
PMN50UPE,115 | NXP USA Inc. | MOSFET P-CH 20V 3.6A 6TSOP | 유품4010 pcs | - | 20 V | 3.6A (Ta) | 66mOhm @ 3.6A, 4.5V | 900mV @ 250µA | 15.7 nC @ 10 V | 24 pF @ 10 V | - | 1.8V, 4.5V | ±8V | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | - | 6-TSOP | - | 510mW (Ta) | - | |||||
MCH3377-S-TL-E | onsemi | MOSFET P-CH 20V 3A MCPH3 | 유품5270 pcs | - | - | - | - | - | - | - | - | - | - | - | - | MCH33 | Tape & Reel (TR) | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||||
AOW7S60 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO262 | 유품41042 pcs | - | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | 372 pF @ 100 V | - | 10V | ±30V | N-Channel | - | AOW7 | Tube | aMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262 | - | 104W (Tc) | - | |||||
UPA2700TP-E2-AZ | Renesas | UPA2700TP - Switching N-Channel | 유품4610 pcs | - | 30 V | 17A (Ta) | 5.3mOhm @ 9A, 10V | 2.5V @ 1mA | 26 nC @ 5 V | 2600 pF @ 10 V | - | 4V, 10V | ±20V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-SOIC (0.173", 4.40mm Width) Exposed Pad | - | 8-HSOP | - | 2W (Ta) | - | |||||
FDS6572A | Fairchild Semiconductor | MOSFET N-CH 20V 16A 8SOIC | 유품17229 pcs | - | 20 V | 16A (Ta) | 6mOhm @ 16A, 4.5V | 1.5V @ 250µA | 80 nC @ 4.5 V | 5914 pF @ 10 V | - | 2.5V, 4.5V | ±12V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta) | - | |||||
AUIRL3705N | International Rectifier | AUTOMOTIVE HEXFET N-CHANNEL | 유품27068 pcs | - | 55 V | 89A (Tc) | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | 3600 pF @ 25 V | - | - | - | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 170W (Tc) | - | |||||
FDN3401 | Fairchild Semiconductor | FDN3401 | 유품3600 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||||
TK290A65Y,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A TO220SIS | 유품59140 pcs | - | 650 V | 11.5A (Tc) | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | 730 pF @ 300 V | - | 10V | ±30V | N-Channel | - | TK290A65 | Tube | DTMOSV | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220SIS | - | 35W (Tc) | - | |||||
BUK7M6R7-40HX | Nexperia USA Inc. | MOSFET N-CH 40V 50A LFPAK33 | 유품80100 pcs | - | 40 V | 50A (Ta) | 6.7mOhm @ 20A, 10V | 3.6V @ 1mA | 24 nC @ 10 V | 1625 pF @ 25 V | - | 10V | +20V, -10V | N-Channel | - | BUK7M6 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | - | LFPAK33 | - | 65W (Ta) | - | |||||
FDU3N40TU | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 2 | 유품4130 pcs | - | 400 V | 2A (Tc) | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 6 nC @ 10 V | 225 pF @ 25 V | - | 10V | ±30V | N-Channel | - | FDU3 | Bulk | UniFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 30W (Tc) | - | |||||
NP52N06SLG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 52A TO252 | 유품51010 pcs | N-Channel | - | 60V | 52A (Tc) | 17.5 mOhm @ 26A, 10V | - | 39nC @ 10V | 2100pF @ 10V | - | - | - | NP52N06SLG-E1-AY-ND NP52N06SLG-E1-AYTR |
- | - | - | NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A TO252 | 1 (Unlimited) | 16 Weeks | N-Channel 60V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK) | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 56W (Tc) | |||||
SI7116DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 40V 10.5A PPAK1212-8 | 유품31520 pcs | - | 40 V | 10.5A (Ta) | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | - | - | 4.5V, 10V | ±20V | N-Channel | - | SI7116 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | - | |||||
SIA429DJT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK SC70-6 | 유품180100 pcs | - | 20 V | 12A (Tc) | 20.5mOhm @ 6A, 4.5V | 1V @ 250µA | 62 nC @ 8 V | 1750 pF @ 10 V | - | 1.5V, 4.5V | ±8V | P-Channel | - | SIA429 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | - | |||||
NTMFS4985NFT3G | onsemi | MOSFET N-CH 30V 17.5A/65A 5DFN | 유품4930 pcs | - | 30 V | 17.5A (Ta), 65A (Tc) | 3.4mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5 nC @ 10 V | 2100 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | NTMFS4985 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 1.63W (Ta), 22.73W (Tc) | - | |||||
IRF8304MTRPBF | International Rectifier | IRF8304 - 12V-300V N-CHANNEL POW | 유품34210 pcs | - | 30 V | 28A (Ta), 170A (Tc) | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | 4700 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | - | DirectFET™ Isometric MX | - | 2.8W (Ta), 100W (Tc) | - | |||||
ZVN4310GTA | Diodes Incorporated | MOSFET N-CH 100V 1.67A SOT223 | 유품45390 pcs | - | 100 V | 1.67A (Ta) | 540mOhm @ 3.3A, 10V | 3V @ 1mA | - | 350 pF @ 25 V | - | 5V, 10V | ±20V | N-Channel | - | ZVN4310 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | - | SOT-223-3 | - | 3W (Ta) | - | |||||
IRFH7107TRPBF | Infineon Technologies | MOSFET N-CH 75V 14A/75A 8PQFN | 유품3750 pcs | - | 75 V | 14A (Ta), 75A (Tc) | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72 nC @ 10 V | 3110 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-PQFN (5x6) | - | 3.6W (Ta), 104W (Tc) | - | |||||
NTMFS5H414NLT1G | onsemi | MOSFET N-CH 40V 35A/210A 5DFN | 유품18618 pcs | - | 40 V | 35A (Ta), 210A (Tc) | 1.4mOhm @ 20A, 10V | 2V @ 250µA | 75 nC @ 10 V | 4550 pF @ 20 V | - | 4.5V, 10V | ±20V | N-Channel | - | NTMFS5 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 3.1W (Ta), 110W (Tc) | - | |||||
UPA2721AGR-E1-AT | Renesas Electronics America Inc | N-CHANNEL POWER MOSFET | 유품27373 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||||
IRFBF20LPBF | Vishay Siliconix | MOSFET N-CH 900V 1.7A I2PAK | 유품26436 pcs | - | 900 V | 1.7A (Tc) | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | 490 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRFBF20 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | I2PAK | - | 3.1W (Ta), 54W (Tc) | - | |||||
SIHP180N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 19A TO220AB | 유품27474 pcs | - | 600 V | 19A (Tc) | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | 1085 pF @ 100 V | - | 10V | ±30V | N-Channel | - | SIHP180 | Tube | E | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 156W (Tc) | - |