|
|
DMT10H010LSS-13 |
Diodes Incorporated |
MOSFET N-CH 100V 11.5A/29.5A 8SO |
유품47300 pcs |
|
|
- |
100 V |
11.5A (Ta), 29.5A (Tc) |
9.5mOhm @ 13A, 10V |
2.8V @ 250µA |
71 nC @ 10 V |
3000 pF @ 50 V |
4.5V, 10V |
±20V |
N-Channel |
DMT10 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
1.4W (Ta) |
|
|
|
BUK9M3R3-40HX |
Nexperia USA Inc. |
MOSFET N-CH 40V 80A LFPAK33 |
유품39877 pcs |
|
|
- |
40 V |
80A (Ta) |
3.3mOhm @ 25A, 10V |
2.15V @ 1mA |
55 nC @ 10 V |
3766 pF @ 25 V |
4.5V, 10V |
±16V |
N-Channel |
BUK9M3 |
Tape & Reel (TR) |
Automotive, AEC-Q101 |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
SOT-1210, 8-LFPAK33 (5-Lead) |
LFPAK33 |
101W (Ta) |
|
|
|
SI7108DN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8 |
유품36710 pcs |
|
|
- |
20 V |
14A (Ta) |
4.9mOhm @ 22A, 10V |
2V @ 250µA |
30 nC @ 4.5 V |
- |
4.5V, 10V |
±16V |
N-Channel |
SI7108 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8 |
PowerPAK® 1212-8 |
1.5W (Ta) |
|
|
|
PMV240SPR |
Nexperia USA Inc. |
MOSFET P-CH 100V 1.2A TO236AB |
유품214430 pcs |
|
|
- |
100 V |
1.2A (Ta) |
365mOhm @ 1.2A, 10V |
4V @ 250µA |
15 nC @ 10 V |
549 pF @ 50 V |
- |
±25V |
P-Channel |
PMV240 |
Tape & Reel (TR) |
TrenchMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
TO-236AB |
710mW (Ta), 8.3W (Tc) |
|
|
|
IRFH7107TR2PBF |
Infineon Technologies |
MOSFET N-CH 75V 14A 8PQFN |
유품5020 pcs |
|
|
- |
75 V |
14A (Ta), 75A (Tc) |
8.5mOhm @ 45A, 10V |
4V @ 100µA |
72 nC @ 10 V |
3110 pF @ 25 V |
- |
- |
N-Channel |
- |
Cut Tape (CT) |
- |
MOSFET (Metal Oxide) |
- |
Surface Mount |
8-PowerTDFN |
8-PQFN (5x6) |
- |
|
|
|
FCH041N60E |
onsemi |
MOSFET N-CH 600V 77A TO247-3 |
유품3418 pcs |
|
|
- |
600 V |
77A (Tc) |
41mOhm @ 39A, 10V |
3.5V @ 250µA |
380 nC @ 10 V |
13700 pF @ 100 V |
10V |
±20V |
N-Channel |
FCH041 |
Tube |
SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
592W (Tc) |
|
|
|
FDB14AN06LA0 |
Fairchild Semiconductor |
MOSFET N-CH 60V 10A/67A TO263AB |
유품3990 pcs |
|
|
- |
60 V |
10A (Ta), 67A (Tc) |
11.6mOhm @ 67A, 10V |
3V @ 250µA |
31 nC @ 5 V |
2900 pF @ 25 V |
5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
125W (Tc) |
|
|
|
BSZ036NE2LSATMA1 |
Infineon Technologies |
MOSFET N-CH 25V 16A/40A TSDSON |
유품86400 pcs |
|
|
- |
25 V |
16A (Ta), 40A (Tc) |
3.6mOhm @ 20A, 10V |
2V @ 250µA |
16 nC @ 10 V |
1200 pF @ 12 V |
4.5V, 10V |
±20V |
N-Channel |
BSZ036 |
Tape & Reel (TR) |
OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
PG-TSDSON-8-FL |
2.1W (Ta), 37W (Tc) |
|
|
|
FCA16N60N |
onsemi |
MOSFET N-CH 600V TO-3PN |
유품4690 pcs |
|
|
- |
600 V |
16A (Tc) |
199mOhm @ 8A, 10V |
4V @ 250µA |
52.3 nC @ 10 V |
2170 pF @ 100 V |
10V |
±30V |
N-Channel |
FCA16 |
Tube |
SupreMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P-3, SC-65-3 |
TO-3PN |
134.4W (Tc) |
|
|
|
DMN1004UFV-7 |
Diodes Incorporated |
MOSFET N-CH 12V 70A POWERDI3333 |
유품226850 pcs |
|
|
- |
12 V |
70A (Tc) |
3.8mOhm @ 15A, 4.5V |
1V @ 250µA |
47 nC @ 8 V |
2385 pF @ 6 V |
2.5V, 4.5V |
±8V |
N-Channel |
DMN1004 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerDI3333-8 (Type UX) |
1.9W (Ta) |
|
|
|
BSZ088N03LSG |
Infineon Technologies |
BSZ088N03 - 12V-300V N-CHANNEL P |
유품139120 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
|
|
|
FDBL86066-F085 |
onsemi |
MOSFET N-CH 100V 185A 8HPSOF |
유품18551 pcs |
|
|
- |
100 V |
185A (Tc) |
4.1mOhm @ 80A, 10V |
4V @ 250µA |
69 nC @ 10 V |
3240 pF @ 50 V |
10V |
±20V |
N-Channel |
FDBL86066 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
8-PowerSFN |
8-HPSOF |
300W (Ta) |
|
|
|
IPL60R105P7AUMA1 |
Infineon Technologies |
MOSFET N-CH 600V 33A 4VSON |
유품14341 pcs |
|
|
- |
600 V |
33A (Tc) |
105mOhm @ 10.5A, 10V |
4V @ 530µA |
45 nC @ 10 V |
1952 pF @ 400 V |
10V |
±20V |
N-Channel |
IPL60R |
Tape & Reel (TR) |
CoolMOS™ P7 |
MOSFET (Metal Oxide) |
-40°C ~ 150°C (TJ) |
Surface Mount |
4-PowerTSFN |
PG-VSON-4 |
137W (Tc) |
|
|
|
STL42P4LLF6 |
STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
유품58630 pcs |
|
|
- |
40 V |
42A (Tc) |
18mOhm @ 5A, 10V |
2.5V @ 250µA |
22 nC @ 4.5 V |
2850 pF @ 25 V |
4.5V, 10V |
±20V |
P-Channel |
STL42 |
Tape & Reel (TR) |
STripFET™ F6 |
MOSFET (Metal Oxide) |
175°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (5x6) |
75W (Tc) |
|
|
|
IXFK36N60P |
IXYS |
MOSFET N-CH 600V 36A TO264AA |
유품3172 pcs |
|
|
- |
600 V |
36A (Tc) |
190mOhm @ 18A, 10V |
5V @ 4mA |
102 nC @ 10 V |
5800 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFK36 |
Tube |
HiPerFET™, Polar |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-264-3, TO-264AA |
TO-264AA (IXFK) |
650W (Tc) |
|
|
|
FQP44N08 |
Fairchild Semiconductor |
MOSFET N-CH 80V 44A TO220-3 |
유품47990 pcs |
|
|
- |
80 V |
44A (Tc) |
34mOhm @ 22A, 10V |
4V @ 250µA |
50 nC @ 10 V |
1430 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
127W (Tc) |
|
|
|
SISS27DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V 50A PPAK 1212-8S |
유품109220 pcs |
|
|
- |
30 V |
50A (Tc) |
5.6mOhm @ 15A, 10V |
2.2V @ 250µA |
140 nC @ 10 V |
5250 pF @ 15 V |
4.5V, 10V |
±20V |
P-Channel |
SISS27 |
Tape & Reel (TR) |
TrenchFET® |
MOSFET (Metal Oxide) |
-50°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® 1212-8S |
PowerPAK® 1212-8S |
4.8W (Ta), 57W (Tc) |
|
|
|
ZVN4525GTA |
Diodes Incorporated |
MOSFET N-CH 250V 310MA SOT223 |
유품90200 pcs |
|
|
- |
250 V |
310mA (Ta) |
8.5Ohm @ 500mA, 10V |
1.8V @ 1mA |
3.65 nC @ 10 V |
72 pF @ 25 V |
2.5V, 10V |
±40V |
N-Channel |
ZVN4525 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-261-4, TO-261AA |
SOT-223-3 |
2W (Ta) |
|
|
|
SIB800EDK-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 1.5A PPAK SC75-6 |
유품3690 pcs |
|
|
Schottky Diode (Isolated) |
20 V |
1.5A (Tc) |
225mOhm @ 1.6A, 4.5V |
1V @ 250µA |
1.7 nC @ 4.5 V |
- |
1.5V, 4.5V |
±6V |
N-Channel |
SIB800 |
Tape & Reel (TR) |
LITTLE FOOT® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
PowerPAK® SC-75-6 |
PowerPAK® SC-75-6 |
1.1W (Ta), 3.1W (Tc) |
|
|
|
PSMN1R0-25YLDX |
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK56 |
유품35457 pcs |
|
|
Schottky Diode (Body) |
25 V |
100A (Tc) |
0.89mOhm @ 25A, 10V |
2.2V @ 1mA |
71.8 nC @ 10 V |
5308 pF @ 12 V |
4.5V, 10V |
±20V |
N-Channel |
PSMN1R0 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
SC-100, SOT-669 |
LFPAK56, Power-SO8 |
160W (Tc) |
|
|
|
APT5017BVFRG |
Microchip Technology |
MOSFET N-CH 500V 30A TO247 |
유품3532 pcs |
|
|
- |
500 V |
30A (Tc) |
170mOhm @ 500mA, 10V |
4V @ 1mA |
300 nC @ 10 V |
5280 pF @ 25 V |
- |
- |
N-Channel |
APT5017 |
Tube |
POWER MOS V® |
MOSFET (Metal Oxide) |
- |
Through Hole |
TO-247-3 |
TO-247 [B] |
- |
|
|
|
SI3400A-TP |
Micro Commercial Co |
MOSFET N-CH 30V 5.8A SOT23 |
유품493730 pcs |
|
|
- |
30 V |
5.8A (Tj) |
32mOhm @ 5.8A, 10V |
1.4V @ 250µA |
- |
1155 pF @ 15 V |
2.5V, 10V |
±12V |
N-Channel |
SI3400 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23 |
400mW |
|
|
|
IRF740BPBF |
Vishay Siliconix |
MOSFET N-CH 400V 10A TO220AB |
유품61850 pcs |
|
|
- |
400 V |
10A (Tc) |
600mOhm @ 5A, 10V |
5V @ 250µA |
30 nC @ 10 V |
526 pF @ 100 V |
10V |
±30V |
N-Channel |
IRF740 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
147W (Tc) |
|
|
|
IRF9510STRL |
Vishay Siliconix |
MOSFET P-CH 100V 4A D2PAK |
유품5270 pcs |
|
|
- |
100 V |
4A (Tc) |
1.2Ohm @ 2.4A, 10V |
4V @ 250µA |
8.7 nC @ 10 V |
200 pF @ 25 V |
10V |
±20V |
P-Channel |
IRF9510 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D²PAK (TO-263) |
3.7W (Ta), 43W (Tc) |
|
|
|
STL22N60DM6 |
STMicroelectronics |
MOSFET N-CH 650V 15A PWRFLAT HV |
유품28396 pcs |
|
|
- |
600 V |
13A (Tc) |
265mOhm @ 6.5A, 10V |
4.75V @ 250µA |
20.6 nC @ 10 V |
800 pF @ 100 V |
10V |
±25V |
N-Channel |
STL22 |
Tape & Reel (TR) |
MDmesh™ M6 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
PowerFlat™ (8x8) HV |
102W (Tc) |
|
|
|
2SJ317NYTR |
Renesas Electronics America Inc |
P-CHANNEL SMALL SIGNAL MOSFET |
유품50000 pcs |
|
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Bulk |
* |
- |
- |
- |
- |
- |
- |
|
|
|
FDD3860 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 6 |
유품3690 pcs |
|
|
- |
100 V |
6.2A (Ta) |
36mOhm @ 5.9A, 10V |
4.5V @ 250µA |
31 nC @ 10 V |
1740 pF @ 50 V |
10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-252, (D-Pak) |
3.1W (Ta), 69W (Tc) |
|
|
|
RAF040P01TCL |
Rohm Semiconductor |
MOSFET P-CH 12V 4A TUMT3 |
유품133020 pcs |
|
|
- |
12 V |
4A (Ta) |
30mOhm @ 4A, 4.5V |
1V @ 1mA |
37 nC @ 4.5 V |
4000 pF @ 6 V |
1.5V, 4.5V |
-8V |
P-Channel |
RAF040 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
3-SMD, Flat Leads |
TUMT3 |
800mW (Ta) |
|
|
|
FDMC7664 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1 |
유품4270 pcs |
|
|
- |
30 V |
18.8A (Ta), 24A (Tc) |
4.2mOhm @ 18.8A, 10V |
3V @ 250µA |
76 nC @ 10 V |
4865 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-MLP (3.3x3.3) |
2.3W (Ta), 45W (Tc) |
|
|
|
FDB8876 |
Fairchild Semiconductor |
MOSFET N-CH 30V 71A TO263AB |
유품92680 pcs |
|
|
- |
30 V |
71A (Tc) |
8.5mOhm @ 40A, 10V |
2.5V @ 250µA |
45 nC @ 10 V |
1700 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
D2PAK (TO-263) |
70W (Tc) |
|
|
|
NTD4808N-35G |
onsemi |
MOSFET N-CH 30V 10A/63A IPAK |
유품5080 pcs |
|
|
- |
30 V |
10A (Ta), 63A (Tc) |
8mOhm @ 30A, 10V |
2.5V @ 250µA |
13 nC @ 4.5 V |
1538 pF @ 12 V |
4.5V, 11.5V |
±20V |
N-Channel |
NTD48 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-251-3 Stub Leads, IPak |
I-Pak |
1.4W (Ta), 54.6W (Tc) |
|
|
|
FCH190N65F-F155 |
onsemi |
MOSFET N-CH 650V 20.6A TO247 |
유품14354 pcs |
|
|
- |
650 V |
20.6A (Tc) |
190mOhm @ 10A, 10V |
5V @ 2mA |
78 nC @ 10 V |
3225 pF @ 100 V |
10V |
±20V |
N-Channel |
FCH190 |
Tube |
FRFET®, SuperFET® II |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
208W (Tc) |
|
|
|
TSM060N03PQ33 RGG |
Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 62A 8PDFN |
유품47900 pcs |
|
|
- |
30 V |
62A (Tc) |
6mOhm @ 15A, 10V |
2.5V @ 250µA |
25.4 nC @ 10 V |
1342 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
TSM060 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerWDFN |
8-PDFN (3.1x3.1) |
40W (Tc) |
|
|
|
FCPF600N65S3R0L |
onsemi |
MOSFET N-CH 650V 6A TO220F-3 |
유품5230 pcs |
|
|
- |
650 V |
6A (Tc) |
600mOhm @ 3A, 10V |
4.5V @ 600µA |
11 nC @ 10 V |
465 pF @ 400 V |
10V |
±30V |
N-Channel |
FCPF600 |
Tube |
SuperFET® III |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 Full Pack |
TO-220F-3 |
24W (Tc) |
|
|
|
IPD80R4K5P7 |
Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR |
유품4970 pcs |
|
|
- |
800 V |
1.5A (Tc) |
4.5Ohm @ 400mA, 10V |
3.5V @ 200µA |
4 nC @ 10 V |
80 pF @ 500 V |
10V |
±20V |
N-Channel |
- |
Bulk |
CoolMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3-341 |
13W (Tc) |
|
|
|
BFL4037 |
Sanyo |
MOSFET N-CH 500V 11A TO220FI |
유품14579 pcs |
|
|
- |
500 V |
11A (Tc) |
430mOhm @ 8A, 10V |
5V @ 1mA |
48.6 nC @ 10 V |
1200 pF @ 30 V |
- |
±30V |
N-Channel |
- |
Bulk |
- |
MOSFET (Metal Oxide) |
150°C |
Through Hole |
TO-220-3 Full Pack |
TO-220FI(LS) |
2W (Ta), 40W (Tc) |
|
|
|
IPI120N08S404AKSA1 |
Infineon Technologies |
MOSFET N-CH 80V 120A TO262-3 |
유품3710 pcs |
|
|
- |
80 V |
120A (Tc) |
4.4mOhm @ 100A, 10V |
4V @ 120µA |
95 nC @ 10 V |
6450 pF @ 25 V |
10V |
±20V |
N-Channel |
IPI120N |
Tube |
Automotive, AEC-Q101, OptiMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-262-3 Long Leads, I²Pak, TO-262AA |
PG-TO262-3-1 |
179W (Tc) |
|
|
|
MCP87130T-U/MF |
Microchip Technology |
MOSFET N-CH 25V 43A 8PDFN |
유품4320 pcs |
|
|
- |
25 V |
43A (Tc) |
13.5mOhm @ 10A, 10V |
1.7V @ 250µA |
8 nC @ 4.5 V |
400 pF @ 12.5 V |
3.3V, 10V |
+10V, -8V |
N-Channel |
MCP87130 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerTDFN |
8-PDFN (5x6) |
2.1W (Ta) |
|
|
|
SI2302-TP |
Micro Commercial Co |
MOSFET N-CH 20V 3A SOT-23 |
유품408450 pcs |
|
|
- |
20 V |
3A (Ta) |
72mOhm @ 3.6A, 4.5V |
1.2V @ 50µA |
10 nC @ 4.5 V |
237 pF @ 10 V |
2.5V, 4.5V |
±8V |
N-Channel |
SI2302 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
SOT-23 |
1.25W (Ta) |
|
|
|
FQP9N08 |
Fairchild Semiconductor |
MOSFET N-CH 80V 9.3A TO220-3 |
유품167510 pcs |
|
|
- |
80 V |
9.3A (Tc) |
210mOhm @ 4.65A, 10V |
4V @ 250µA |
7.7 nC @ 10 V |
250 pF @ 25 V |
10V |
±25V |
N-Channel |
- |
Tube |
QFET® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
40W (Tc) |
|
|
|
IXFN30N110P |
IXYS |
MOSFET N-CH 1100V 25A SOT-227B |
유품3790 pcs |
|
|
- |
1100 V |
25A (Tc) |
360mOhm @ 15A, 10V |
6.5V @ 1mA |
235 nC @ 10 V |
13600 pF @ 25 V |
10V |
±30V |
N-Channel |
IXFN30 |
Tube |
HiPerFET™, Polar |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Chassis Mount |
SOT-227-4, miniBLOC |
SOT-227B |
695W (Tc) |
|
|
|
AOT15S65L |
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 15A TO220 |
유품14994 pcs |
|
|
- |
650 V |
15A (Tc) |
290mOhm @ 7.5A, 10V |
4V @ 250µA |
17.2 nC @ 10 V |
841 pF @ 100 V |
10V |
±30V |
N-Channel |
AOT15 |
Tube |
aMOS™ |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220 |
208W (Tc) |
|
|
|
IPS050N03LG |
Infineon Technologies |
N-CHANNEL POWER MOSFET |
유품117440 pcs |
|
|
- |
30 V |
50A (Tc) |
5mOhm @ 30A, 10V |
2.2V @ 250µA |
31 nC @ 10 V |
3200 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Bulk |
OptiMOS® |
MOSFET (Metal Oxide) |
-55°C ~ 175°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
68W (Tc) |
|
|
|
IRFB20N50KPBF |
Vishay Siliconix |
MOSFET N-CH 500V 20A TO220AB |
유품17237 pcs |
|
|
- |
500 V |
20A (Tc) |
250mOhm @ 12A, 10V |
5V @ 250µA |
110 nC @ 10 V |
2870 pF @ 25 V |
10V |
±30V |
N-Channel |
IRFB20 |
Tube |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220AB |
280W (Tc) |
|
|
|
FDZ293P |
onsemi |
MOSFET P-CH 20V 4.6A 9BGA |
유품4870 pcs |
|
|
- |
20 V |
4.6A (Ta) |
46mOhm @ 4.6A, 4.5V |
1.5V @ 250µA |
11 nC @ 4.5 V |
754 pF @ 10 V |
2.5V, 4.5V |
±12V |
P-Channel |
FDZ29 |
Tape & Reel (TR) |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
9-VFBGA |
9-BGA (1.5x1.6) |
1.7W (Ta) |
|
|
|
IRFH5303TRPBF |
Infineon Technologies |
MOSFET N-CH 30V 23A/82A 8PQFN |
유품4870 pcs |
|
|
- |
30 V |
23A (Ta), 82A (Tc) |
4.2mOhm @ 49A, 10V |
2.35V @ 50µA |
41 nC @ 10 V |
2190 pF @ 15 V |
4.5V, 10V |
±20V |
N-Channel |
- |
Tape & Reel (TR) |
HEXFET® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PowerVDFN |
8-PQFN (5x6) |
3.6W (Ta), 46W (Tc) |
|
|
|
ZXMP3A16N8TA |
Diodes Incorporated |
MOSFET P-CH 30V 5.6A 8SO |
유품72400 pcs |
|
|
- |
30 V |
5.6A (Ta) |
40mOhm @ 4.2A, 10V |
1V @ 250µA |
29.6 nC @ 10 V |
1022 pF @ 15 V |
4.5V, 10V |
±20V |
P-Channel |
ZXMP3A16 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
1.9W (Ta) |
|
|
|
FDS2582 |
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 4 |
유품4760 pcs |
|
|
- |
150 V |
4.1A (Ta) |
66mOhm @ 4.1A, 10V |
4V @ 250µA |
25 nC @ 10 V |
1290 pF @ 25 V |
6V, 10V |
±20V |
N-Channel |
- |
Bulk |
PowerTrench® |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
2.5W (Ta) |
|
|
|
US5U2TR |
Rohm Semiconductor |
MOSFET N-CH 30V 1.4A TUMT5 |
유품121240 pcs |
|
|
Schottky Diode (Isolated) |
30 V |
1.4A (Ta) |
240mOhm @ 1.4A, 10V |
2.5V @ 1mA |
2 nC @ 5 V |
70 pF @ 10 V |
4V, 10V |
±20V |
N-Channel |
US5U2 |
Tape & Reel (TR) |
- |
MOSFET (Metal Oxide) |
150°C (TJ) |
Surface Mount |
6-SMD (5 Leads), Flat Lead |
TUMT5 |
1W (Ta) |
|
|
|
IPW60R037P7XKSA1 |
Infineon Technologies |
MOSFET N-CH 650V 76A TO247-3 |
유품4393 pcs |
|
|
- |
650 V |
76A (Tc) |
37mOhm @ 29.5A, 10V |
4V @ 1.48mA |
121 nC @ 10 V |
5243 pF @ 400 V |
10V |
±20V |
N-Channel |
IPW60R037 |
Tube |
CoolMOS™ P7 |
MOSFET (Metal Oxide) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
PG-TO247-3 |
255W (Tc) |
|